Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/33—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H10W74/40—
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Non-Volatile Memory (AREA)
• Semiconductor Memories (AREA)
• Read Only Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=24712096

Family Applications (1)

Country Status (11)

Families Citing this family (24)

• 0
  • CA CA813537A patent/CA813537A/en not_active Expired
• 1968
  • 1968-09-27 GB GB45991/68A patent/GB1247892A/en not_active Expired
  • 1968-10-02 SU SU1274193A patent/SU409454A3/ru active
  • 1968-10-03 BR BR202844/68A patent/BR6802844D0/pt unknown
  • 1968-10-08 FR FR1593047D patent/FR1593047A/fr not_active Expired
  • 1968-10-14 DE DE1803035A patent/DE1803035B2/de not_active Ceased
  • 1968-10-15 ES ES359165A patent/ES359165A1/es not_active Expired
  • 1968-10-16 BE BE722411D patent/BE722411A/xx unknown
  • 1968-10-16 NL NL6814796A patent/NL6814796A/xx unknown
  • 1968-10-17 JP JP7571768A patent/JPS4812372B1/ja active Pending
• 1973
  • 1973-12-30 MY MY390/73A patent/MY7300390A/xx unknown
• 1974
  • 1974-04-16 JP JP4324574A patent/JPS5436446B1/ja active Pending

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