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MY176378A - Image sensor with solar cell function and electronic device thereof - Google Patents

Image sensor with solar cell function and electronic device thereof

Info

Publication number
MY176378A
MY176378A MYPI2016703713A MYPI2016703713A MY176378A MY 176378 A MY176378 A MY 176378A MY PI2016703713 A MYPI2016703713 A MY PI2016703713A MY PI2016703713 A MYPI2016703713 A MY PI2016703713A MY 176378 A MY176378 A MY 176378A
Authority
MY
Malaysia
Prior art keywords
solar cell
switched
image sensor
photo detector
electronic device
Prior art date
Application number
MYPI2016703713A
Inventor
Hoon Kim
Original Assignee
Hoon Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/883,589 external-priority patent/US9735189B2/en
Application filed by Hoon Kim filed Critical Hoon Kim
Publication of MY176378A publication Critical patent/MY176378A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A unit pixel element (700) that acts as an image sensor or a solar cell according to the present invention comprises a photo detector (300) that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch (Ms) that is wired and switched on or switched off between the source terminal of the photo detector (300) and the first solar cell bus (SCB1); and a second switch (Mg) that is wired and switched on or switched off between the gate terminal of the photo detector (300) and the second solar cell bus (SCB2), and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power.
MYPI2016703713A 2015-10-14 2016-10-07 Image sensor with solar cell function and electronic device thereof MY176378A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/883,589 US9735189B2 (en) 2015-01-15 2015-10-14 Image sensor with solar cell function and electronic device thereof

Publications (1)

Publication Number Publication Date
MY176378A true MY176378A (en) 2020-08-04

Family

ID=58605977

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2016703713A MY176378A (en) 2015-10-14 2016-10-07 Image sensor with solar cell function and electronic device thereof
MYPI2019006171A MY199276A (en) 2015-10-14 2016-10-07 Image sensor with solar cell function and electronic device thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
MYPI2019006171A MY199276A (en) 2015-10-14 2016-10-07 Image sensor with solar cell function and electronic device thereof

Country Status (3)

Country Link
JP (1) JP6308404B2 (en)
CN (1) CN106601763B (en)
MY (2) MY176378A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10158041B2 (en) * 2014-07-09 2018-12-18 Hoon Kim Unit pixel of image sensor and photo detector using the same
MY174333A (en) * 2015-10-14 2020-04-08 Hoon Kim Image sensor with solar cell function
CN111787213A (en) * 2020-07-31 2020-10-16 维沃移动通信有限公司 Camera module and electronic equipment

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2937047B2 (en) * 1994-12-26 1999-08-23 日本電気株式会社 Image input device
JPH10242443A (en) * 1997-02-27 1998-09-11 Toshiba Corp Function integrated semiconductor device
JP2007281144A (en) * 2006-04-05 2007-10-25 Fujifilm Corp Solid-state imaging device and imaging apparatus
JP2008294590A (en) * 2007-05-22 2008-12-04 Sony Corp Imaging device
WO2009136285A2 (en) * 2008-04-16 2009-11-12 Quantum Semiconductor Llc Pixel circuitry for ultra wide dynamic range
US8436288B2 (en) * 2009-04-24 2013-05-07 Quantum Semiconductor Llc Image sensors with photo-current mode and solar cell operation
US8610234B2 (en) * 2011-09-02 2013-12-17 Hoon Kim Unit pixel of image sensor and photo detector thereof
US8569806B2 (en) * 2011-09-02 2013-10-29 Hoon Kim Unit pixel of image sensor and photo detector thereof
JP2012191222A (en) * 2012-05-21 2012-10-04 Fujifilm Corp Manufacturing method of photoelectric conversion element
FR2997596B1 (en) * 2012-10-26 2015-12-04 New Imaging Technologies Sas STRUCTURE OF A CMOS ACTIVE PIXEL

Also Published As

Publication number Publication date
CN106601763B (en) 2020-01-31
MY199276A (en) 2023-10-24
CN106601763A (en) 2017-04-26
JP6308404B2 (en) 2018-04-11
JP2017076798A (en) 2017-04-20

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