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MY167855A - Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell - Google Patents

Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell

Info

Publication number
MY167855A
MY167855A MYPI2012700498A MYPI2012700498A MY167855A MY 167855 A MY167855 A MY 167855A MY PI2012700498 A MYPI2012700498 A MY PI2012700498A MY PI2012700498 A MYPI2012700498 A MY PI2012700498A MY 167855 A MY167855 A MY 167855A
Authority
MY
Malaysia
Prior art keywords
diffusion layer
type diffusion
forming
composition
photovoltaic cell
Prior art date
Application number
MYPI2012700498A
Other languages
English (en)
Inventor
Youichi Machii
Masato Yoshida
Takeshi Nojiri
Kaoru Okaniwa
Mitsunori Iwamuro
Shuuichirou Adachi
Takuya Aoyagi
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of MY167855A publication Critical patent/MY167855A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10P32/00—
    • H10P32/141—
    • H10P32/171—
    • H10P32/19—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
MYPI2012700498A 2010-01-25 2011-01-25 Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell MY167855A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010013517 2010-01-25
JP2010208429 2010-09-16
JP2011005313A JP4868079B1 (ja) 2010-01-25 2011-01-13 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

Publications (1)

Publication Number Publication Date
MY167855A true MY167855A (en) 2018-09-26

Family

ID=44012589

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012700498A MY167855A (en) 2010-01-25 2011-01-25 Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell

Country Status (8)

Country Link
EP (1) EP2348546A3 (fr)
JP (1) JP4868079B1 (fr)
KR (2) KR20110087235A (fr)
CN (4) CN104900724B (fr)
MY (1) MY167855A (fr)
SG (1) SG182734A1 (fr)
TW (3) TWI587372B (fr)
WO (1) WO2011090216A1 (fr)

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TW201331312A (zh) * 2012-01-10 2013-08-01 日立化成股份有限公司 遮罩形成用組成物、太陽電池用基板的製造方法以及太陽電池元件的製造方法
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CN102623104B (zh) * 2012-02-13 2014-06-11 江苏瑞德新能源科技有限公司 一种太阳能电池用铝浆料的制备工艺
TWI603386B (zh) * 2012-02-23 2017-10-21 日立化成股份有限公司 ｎ型擴散層形成組成物、具有ｎ型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法
WO2013125254A1 (fr) * 2012-02-23 2013-08-29 日立化成株式会社 Composition de formation de couche de diffusion d'impureté, procédé de fabrication d'un substrat semi-conducteur doté d'une couche de diffusion d'impureté et procédé de fabrication d'un élément de cellule solaire
JPWO2013125252A1 (ja) * 2012-02-23 2015-07-30 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法及び太陽電池素子の製造方法
JP5610100B2 (ja) * 2012-02-29 2014-10-22 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
KR101868638B1 (ko) * 2012-03-13 2018-06-19 주식회사 케이씨씨 실리콘 태양전지 전면전극용 페이스트 조성물
CN103680673B (zh) * 2012-08-31 2016-06-01 上海比亚迪有限公司 Se晶体硅太阳电池向光面种子层浆料及其制备方法、se晶体硅太阳电池及其制备方法
KR101590227B1 (ko) * 2013-06-05 2016-01-29 제일모직주식회사 태양전지 전극　형성용 조성물 및 이로부터 제조된 전극
EP2913139B1 (fr) 2014-02-26 2019-04-03 Heraeus Precious Metals North America Conshohocken LLC Verre comprenant du molybdène et du plomb dans une pâte de cellule solaire
US9245754B2 (en) * 2014-05-28 2016-01-26 Mark E. Granahan Simplified charge balance in a semiconductor device
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CN106711280B (zh) * 2016-12-01 2018-07-13 江苏福克斯新能源科技有限公司 一种n型双面电池的制作方法
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Also Published As

Publication number Publication date
JP2012084830A (ja) 2012-04-26
JP4868079B1 (ja) 2012-02-01
KR20170086001A (ko) 2017-07-25
TW201423846A (zh) 2014-06-16
CN102194672B (zh) 2016-07-06
CN102194672A (zh) 2011-09-21
EP2348546A3 (fr) 2017-08-16
SG182734A1 (en) 2012-08-30
EP2348546A2 (fr) 2011-07-27
KR20110087235A (ko) 2011-08-02
TWI587372B (zh) 2017-06-11
TWI482208B (zh) 2015-04-21
CN106158603A (zh) 2016-11-23
TWI480930B (zh) 2015-04-11
CN104900724B (zh) 2017-05-10
TW201528340A (zh) 2015-07-16
CN104900724A (zh) 2015-09-09
CN104810258A (zh) 2015-07-29
WO2011090216A1 (fr) 2011-07-28
TW201133564A (en) 2011-10-01

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