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MY165677A - Embedded through-silicon-via - Google Patents

Embedded through-silicon-via

Info

Publication number
MY165677A
MY165677A MYPI2011006291A MYPI2011006291A MY165677A MY 165677 A MY165677 A MY 165677A MY PI2011006291 A MYPI2011006291 A MY PI2011006291A MY PI2011006291 A MYPI2011006291 A MY PI2011006291A MY 165677 A MY165677 A MY 165677A
Authority
MY
Malaysia
Prior art keywords
die
substrate
semiconductor
pads
vias
Prior art date
Application number
MYPI2011006291A
Inventor
Choong Kooi Chee
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to MYPI2011006291A priority Critical patent/MY165677A/en
Priority to TW101146178A priority patent/TWI506745B/en
Priority to PCT/US2012/071681 priority patent/WO2013101849A1/en
Publication of MY165677A publication Critical patent/MY165677A/en

Links

Classifications

    • H10W70/635—
    • H10W70/09—
    • H10W70/614—
    • H10W70/685—
    • H10W90/701—
    • H10W20/20—
    • H10W70/60—
    • H10W72/241—
    • H10W72/9413—
    • H10W74/15—
    • H10W90/00—
    • H10W90/26—
    • H10W90/722—
    • H10W90/724—
    • H10W90/732—
    • H10W90/734—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

ELECTRONIC ASSEMBLIES AND THEIR MANUFACTURE ARE DESCRIBED. ONE EMBODIMENT RELATES TO A DEVICE INCLUDING A MULTILAYER SUBSTRATE COMPRISING A PLURALITY OF DIELECTRIC LAYERS AND METAL LAYERS, THE MULTILAYER SUBSTRATE INCLUDING A FIRST SIDE AND A SECOND SIDE. A SEMICONDUCTOR DIE IS EMBEDDED IN THE SUBSTRATE, THE DIE INCLUDING A PLURALITY OF THROUGH-SEMICONDUCTOR-VIAS EXTENDING FROM A FIRST END TO A SECOND END OF THE DIE. THE THROUGH-SEMICONDUCTOR-VIAS ARE ELECTRICALLY COUPLED TO ELECTRICALLY CONDUCTING PATHWAYS DEFINED BY THE METAL LAYERS, INCLUDING PATHWAYS EXTENDING FROM THE FIRST END OF THE DIE TO PADS ON THE FIRST SIDE OF THE SUBSTRATE, AND PATHWAYS EXTENDING FROM THE SECOND END OF THE DIE TO PADS ON THE SECOND SIDE OF THE SUBSTRATE. THE THROUGH-SEMICONDUCTOR-VIAS IN THE DIE HAVE A PITCH THAT IS SMALLER THAN THAT OF THE PADS ON THE FIRST SIDE OF THE SUBSTRATE. THE THROUGH-SEMICONDUCTOR-VIAS IN THE DIE HAVE A PITCH THAT ALSO IS SMALLER THAN THAT OF THE PADS ON THE SECOND SIDE OF THE SUBSTRATE.
MYPI2011006291A 2011-12-27 2011-12-27 Embedded through-silicon-via MY165677A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
MYPI2011006291A MY165677A (en) 2011-12-27 2011-12-27 Embedded through-silicon-via
TW101146178A TWI506745B (en) 2011-12-27 2012-12-07 Electronic device and electronic device manufacturing method
PCT/US2012/071681 WO2013101849A1 (en) 2011-12-27 2012-12-26 Embedded through-silicon-via

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2011006291A MY165677A (en) 2011-12-27 2011-12-27 Embedded through-silicon-via

Publications (1)

Publication Number Publication Date
MY165677A true MY165677A (en) 2018-04-18

Family

ID=48698594

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2011006291A MY165677A (en) 2011-12-27 2011-12-27 Embedded through-silicon-via

Country Status (3)

Country Link
MY (1) MY165677A (en)
TW (1) TWI506745B (en)
WO (1) WO2013101849A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3155653A4 (en) * 2014-06-16 2018-02-21 Intel Corporation Embedded memory in interconnect stack on silicon die
KR20160090705A (en) * 2015-01-22 2016-08-01 에스케이하이닉스 주식회사 Package substrate, and semiconductor package using the package substrate
CN118173519A (en) 2019-03-11 2024-06-11 奥特斯奥地利科技与系统技术有限公司 Component carrier and method for manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388207B1 (en) * 2000-12-29 2002-05-14 Intel Corporation Electronic assembly with trench structures and methods of manufacture
TW503496B (en) * 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
US7049208B2 (en) * 2004-10-11 2006-05-23 Intel Corporation Method of manufacturing of thin based substrate
US7576435B2 (en) * 2007-04-27 2009-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Low-cost and ultra-fine integrated circuit packaging technique
KR100891805B1 (en) * 2007-05-25 2009-04-07 주식회사 네패스 Wafer-level system-in-package and manufacturing method thereof
KR100872583B1 (en) * 2007-07-12 2008-12-08 삼성전기주식회사 Printed Circuit Board Manufacturing Method and Interposer Board
KR20100030151A (en) * 2008-09-09 2010-03-18 삼성전기주식회사 Electronic chip embedded pcb
US20100155931A1 (en) * 2008-12-22 2010-06-24 Qualcomm Incorporated Embedded Through Silicon Stack 3-D Die In A Package Substrate
TWI460844B (en) * 2009-04-06 2014-11-11 金龍國際公司 Stacked package structure with embedded wafer and germanium via film and manufacturing method thereof
KR101084910B1 (en) * 2009-10-12 2011-11-17 삼성전기주식회사 Electronic component embedded printed circuit board and manufacturing method

Also Published As

Publication number Publication date
WO2013101849A1 (en) 2013-07-04
TWI506745B (en) 2015-11-01
TW201342550A (en) 2013-10-16

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