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MY132894A - Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof - Google Patents

Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof

Info

Publication number
MY132894A
MY132894A MYPI98003399A MYPI9803399A MY132894A MY 132894 A MY132894 A MY 132894A MY PI98003399 A MYPI98003399 A MY PI98003399A MY PI9803399 A MYPI9803399 A MY PI9803399A MY 132894 A MY132894 A MY 132894A
Authority
MY
Malaysia
Prior art keywords
films
tunable
bottom layer
amorphous carbon
fabrication
Prior art date
Application number
MYPI98003399A
Inventor
Katherina E Babich
Timothy Allan Brunner
Alessandro Cesare Callegari
Alfred Grill
Christopher V Jahnes
Vishnubhai Vitthalbhai Patel
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of MY132894A publication Critical patent/MY132894A/en

Links

Classifications

    • H10P76/2043—

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

DISCLOSED IS VAPOR DEPOSITED THICK ARC LAYER AND METHOD OF PREPARING SINGLE AND TUNABLE THICK BOTTOM LAYER COATINGS BASED ON AMORPHOUS CARBON FILMS. THESE FILM CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE THE INDEX OF REFRACTION AND THE EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGHTS, IN PARTICULAR 365, 248 AND 193 NM. THIS MAKES THE FILMS EXTREMELY USEFUL TO BE USED AS THICK BOTTOM LAYERS IN A BILAYER RESIST SYSTEM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR FLUORINE ION ETCH PROCESS. BECAUSE OF THESE UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A SINGLE OR TUNABLE THICK BOTTOM LAYER AT UV AND DUV WAVELENGHTS TO PRODUCE PRACTICALLY ZERO REFLECTIONS AT THE RESIST/BOTTOM LAYER INTERFACE. THIS GREATLY IMPROVES PERFORMANCES OF SEMICONDUCTORS CHIPS.
MYPI98003399A 1997-08-25 1998-07-24 Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof MY132894A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92447697A 1997-08-25 1997-08-25

Publications (1)

Publication Number Publication Date
MY132894A true MY132894A (en) 2007-10-31

Family

ID=25450251

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI98003399A MY132894A (en) 1997-08-25 1998-07-24 Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof

Country Status (5)

Country Link
JP (1) JP3117429B2 (en)
KR (1) KR100301272B1 (en)
MY (1) MY132894A (en)
SG (1) SG74649A1 (en)
TW (1) TW468209B (en)

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JP4542678B2 (en) * 2000-07-19 2010-09-15 株式会社ユーテック Fine processing method, antireflection film and film formation method thereof, and hard disk head manufacturing method
DE10156865A1 (en) * 2001-11-20 2003-05-28 Infineon Technologies Ag Process for forming a structure in a semiconductor substrate comprises transferring a photolithographic structure on a photoresist layer into an anti-reflective layer
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
DE10356668B4 (en) * 2003-12-04 2005-11-03 Infineon Technologies Ag Manufacturing method for a hard mask on a semiconductor structure
US7785753B2 (en) * 2006-05-17 2010-08-31 Lam Research Corporation Method and apparatus for providing mask in semiconductor processing
US7514125B2 (en) 2006-06-23 2009-04-07 Applied Materials, Inc. Methods to improve the in-film defectivity of PECVD amorphous carbon films
US7867578B2 (en) * 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
KR100728993B1 (en) 2006-06-30 2007-06-15 주식회사 하이닉스반도체 Manufacturing method of semiconductor device
US7776516B2 (en) 2006-07-18 2010-08-17 Applied Materials, Inc. Graded ARC for high NA and immersion lithography
JP5275085B2 (en) * 2009-02-27 2013-08-28 株式会社東芝 Manufacturing method of semiconductor device
WO2010045153A2 (en) * 2008-10-14 2010-04-22 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd)
US8153351B2 (en) * 2008-10-21 2012-04-10 Advanced Micro Devices, Inc. Methods for performing photolithography using BARCs having graded optical properties
WO2010083350A1 (en) * 2009-01-16 2010-07-22 Fujifilm Electronic Materials U.S.A., Inc. Nonpolymeric binders for semiconductor substrate coatings
KR101821304B1 (en) * 2013-05-03 2018-01-23 어플라이드 머티어리얼스, 인코포레이티드 Optically tuned hardmask for multi-patterning applications
CN110622280B (en) 2017-06-08 2023-11-24 应用材料公司 High-density, low-temperature carbon films for hard masks and other patterning applications
WO2019199681A1 (en) * 2018-04-09 2019-10-17 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
US11603591B2 (en) 2018-05-03 2023-03-14 Applied Materials Inc. Pulsed plasma (DC/RF) deposition of high quality C films for patterning
JP7348210B2 (en) * 2018-06-13 2023-09-20 ブルーワー サイエンス アイ エヌ シー． Adhesive layer for EUV lithography
US11158507B2 (en) 2018-06-22 2021-10-26 Applied Materials, Inc. In-situ high power implant to relieve stress of a thin film
US11842897B2 (en) 2018-10-26 2023-12-12 Applied Materials, Inc. High density carbon films for patterning applications
JP7565947B2 (en) 2019-05-24 2024-10-11 アプライド マテリアルズ インコーポレイテッド Substrate Processing Chamber
US11270905B2 (en) 2019-07-01 2022-03-08 Applied Materials, Inc. Modulating film properties by optimizing plasma coupling materials
KR102431292B1 (en) 2020-01-15 2022-08-09 램 리써치 코포레이션 Bottom layer for photoresist adhesion and dose reduction
US11664214B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US11664226B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density carbon films for hardmasks and other patterning applications
US11421324B2 (en) 2020-10-21 2022-08-23 Applied Materials, Inc. Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition

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KR100323442B1 (en) * 1994-06-17 2002-05-13 박종섭 Method for fabricating semiconductor device
US6428894B1 (en) 1997-06-04 2002-08-06 International Business Machines Corporation Tunable and removable plasma deposited antireflective coatings

Also Published As

Publication number Publication date
SG74649A1 (en) 2000-08-22
JP3117429B2 (en) 2000-12-11
JPH11150115A (en) 1999-06-02
KR19990023841A (en) 1999-03-25
KR100301272B1 (en) 2001-10-19
TW468209B (en) 2001-12-11

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