MXPA00008277A - Abrasive article and method for making the same - Google Patents
Abrasive article and method for making the sameInfo
- Publication number
- MXPA00008277A MXPA00008277A MXPA/A/2000/008277A MXPA00008277A MXPA00008277A MX PA00008277 A MXPA00008277 A MX PA00008277A MX PA00008277 A MXPA00008277 A MX PA00008277A MX PA00008277 A MXPA00008277 A MX PA00008277A
- Authority
- MX
- Mexico
- Prior art keywords
- polyurethane
- layer
- abrasive
- product
- polyurethane film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 229920002635 polyurethane Polymers 0.000 claims abstract description 43
- 239000004814 polyurethane Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229920006264 polyurethane film Polymers 0.000 claims description 48
- 238000002844 melting Methods 0.000 claims description 38
- 230000008018 melting Effects 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 28
- 229920005830 Polyurethane Foam Polymers 0.000 claims description 8
- 239000011496 polyurethane foam Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- -1 suflate Chemical compound 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005304 joining Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 44
- 239000000463 material Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- YFONKFDEZLYQDH-BOURZNODSA-N indaziflam Chemical compound CC(F)C1=NC(N)=NC(N[C@H]2C3=CC(C)=CC=C3C[C@@H]2C)=N1 YFONKFDEZLYQDH-BOURZNODSA-N 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 235000013980 iron oxide Nutrition 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000008262 pumice Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 description 1
- 229940039790 sodium oxalate Drugs 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002993 sponge (artificial) Substances 0.000 description 1
- 229910052572 stoneware Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Abstract
The present invention relates to an abrasive article. The abrasive article of the present invention contains an abrasive layer, a polyurethane structure bonded to the abrasive layer and a substrate bonded to the polyurethane structure. The present invention also involves a method for making said abrasive article.
Description
ABRASIVE PRODUCT AND METHOD FOR ITS MANUFACTURE
TECHNICAL FIELD OF THE INVENTION The present invention relates to an abrasive product that can be used in the cleaning of a metal, glass or plastic surface in a clean room, and a method for manufacturing the abrasive product.
BACKGROUND OF THE INVENTION Different abrasive parts have been developed for use in cleaning and that incorporate a surface for scrubbing or scrubbing within a polyurethane or other polymeric sponge. U.S. Patent No. 3,414,928 discloses a sponge containing plastic or wire wool embedded in the surface of a polyurethane or polyacetate sponge. U.S. Patent No. 3,570,036 discloses a multi-layer polyurethane sponge, wherein the surface layers contain alternating polyurethane foil tapes of different textures. U.S. Patent No. 3,810,841 discloses that abrasives, as well as other additives such as soaps and detergents, can be integrally incorporated into a polyurethane sponge having at least one crosslinked layer for the output of the additives. In clean rooms, where semiconductors are produced, magnetic storage media or thin-film or semiconductor circuits are common
• find cleaning problems. It is almost always necessary to clean metal, glass or plastic surfaces to eliminate metallic and other particles, and to eliminate organic and other residues. For example, after a metal pipe has been installed in a clean room, it is necessary to clean the inside surface of the metal pipe to remove metal particles resulting from
^ P 10 previous manufacturing, cutting or milling operations. In theory, products for cleaning metal, glass or plastic surfaces in clean rooms must meet certain criteria. These products must be hydrophilic and dissipate static. In particular, but not
exclusively if used in clean rooms where semiconductors are produced, magnetic storage media or thin film circuits, these products must have
^ Very low counts of potentially destructive particles when released into deionized water, particularly
particles of size larger than approximately 0.5 μ, and very low account for potentially deleterious ions when released in deionized water, particularly chlorine, fluorine, sodium, sulfate, sulfite or silicon. So far, none of the cleaning pads available for cleaning
metallic, glass or plastic surfaces in clean rooms have met all these criteria.
SUMMARY OF THE INVENTION The present invention relates to an abrasive product containing an abrasive layer, a polyurethane film structure bonded to the abrasive layer and a substrate bonded to the structure of the polyurethane film. When the abrasive product is immersed in deionized water, it releases less than approximately 36.0 x 10 particles of a size
• 10 greater than about 0.5 μ per square meter of the structure and less than about 2.5 parts per million of chloride, fluoride, sodium, sulfate, sulfite or silicon ions. The substrate used in the abrasive product is a
open cell polyurethane foam, static dissipative, hydrophilic. Preferably, the structure of the polyurethane film contains two layers of film of
B polyurethane that are bonded together, and one of the polyurethane films is bonded to the abrasive layer. From
Most preferably, one of the layers of the polyurethane film is in a polyurethane with high melting point and the other layer of polyurethane film is a low melting polyurethane. The polyurethane film layer with low melting point is bonded to the abrasive layer and the
layer of polyurethane with high melting point is bonded to the layer of polyurethane film with low melting point and the substrate is bonded to the polyurethane layer with a point of
^ high fusion. The present invention also relates to a method 5 for producing an abrasive product. The method includes joining a polyurethane film structure to an abrasive layer and bonding a substrate to the polyurethane layer. When the structure of the polyurethane film contains two layers of polyurethane film, the method includes the bonding F 10 of the first layer of the polyurethane film to the surface of an abrasive layer, the bonding of a second layer of a polyurethane film. polyurethane on the first layer of polyurethane film and the bonding of a substrate on the second layer of polyurethane film. Preferably, the first layer of polyurethane film is a polyurethane with a low melting point and the second layer of polyurethane film is a polyurethane with a high melting point.
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an abrasive product, specifically to an abrasive pad. The present invention also relates to a method for manufacturing the abrasive product. The abrasive product of the present invention has an abrasive layer, a structure of
polyurethane film bonded to the abrasive layer and a substrate bonded to the polyurethane film structure. The abrasive layer used in the present invention contains abrasive particles. The individual abrasive particles can be selected from those commonly used in the abrasive art, however, the abrasive particles (size and composition) will be chosen based on the abrasive particles suitable for use in the present invention including hardness, compatibility with the part. of proposed work and particle size. The abrasive particles may be composed of natural abrasives or manufactured abrasives. Examples of natural abrasives include: diamond, corundum, emery, garnet, bubrstone [sic], quartz, stoneware, flint, quartzite, silica, feldspar, pumice and talc. Examples of the abrasives manufactured include: boron carbide, cubic boron nitride, fused alumina, ceramics, aluminum oxide, heat-treated aluminum oxide, alumina zirconia, glass, silicon carbide, iron oxides, tantalum carbide , oxide of serious, oxide of tin, titanium carbide, synthetic diamond, manganese dioxide, zirconium oxide and silicon nitride. The abrasive particles used in this invention have a particle size in the range from about 60 grit to about 1200 grit (grit = grain size).
As used herein, the term "abrasive particle" includes agglomerates of individual abrasive particles. An abrasive agglomerate is formed when a plurality of abrasive particles are agglomerated together with a binder to form a larger abrasive particle that can provide a specific particulate structure. The particles forming the abrasive agglomerate may contain more than one type of abrasive particle. The abrasive product of the present invention also
^ 10 contains a polyurethane film structure. The polyurethane film structure used in the present invention contains at least two layers of polyurethane film. The two layers of polyurethane film are bonded together and one of the layers is
attached to the abrasive layer. It is possible to use any polyurethane polymer for the film layers and the polyurethane polymer used for each of the layers k may be the same or different. Preferably, one of the film layers is a polyurethane layer with a point of
low fusion. As used herein, the term "low melting point polyurethane layer" means that it melts at a lower temperature and the term "high melting point polyurethane layer" means that it melts at a higher temperature. An example of a polyurethane with
low melting point that can be used in the present
TO.
invention is PURO Hl, which is available from Adhesive Films, Inc., 4 Barnett Road, Pine Broo, NJ 07058. An example of a
• Polyurethane with high melting point that can be used in the present invention is PT6100S, which is available from Deerfield Urethane Inc., Route 5 & 10, Box 186, South Deerfield, MA 01273. Polyurethane with low melting temperature is bonded to the abrasive layer and polyurethane with high melting point joins the polyurethane at low melting temperature. ^ 10 The substrate used in the present invention is an open cell polyurethane foam, which dissipates static, hydrophilic and joins the structure of the polyurethane film. The polyurethane foam used in the present invention is a material that dissipates static in a natural way, that is, it has a safe electrostatic charge (ESD). The polyurethane foam material has a surface resistance of 10 to
• approximately 108 ohs / cm2. In general, materials that have less surface resistance than
approximately 10 12 ohms / cm2 are considered safe ESD. Materials that have surface resistances greater than about 10 12 olims / cm2 require treatment, such as processing with surfactants, to reduce surface resistance to acceptable levels. An example of an open cell, static dissipative, hydrophilic polyurethane foam that can be used in this invention is Ultra SOLV, which is commercially available from Ilshire Technologies, Inc. The abrasive product of the present invention 5 is prepared by bonding a polyurethane film structure to an abrasive layer and then bonding a substrate to the polyurethane film structure. When the polyurethane film structure contains a polyurethane layer with a low melting point and a polyurethane layer with a high melting point, the abrasive product is prepared by bonding the low melting point polyurethane layer to the abrasive layer, joining the polyurethane film with high melting point to the polyurethane film with low melting point and then attaching a substrate to the polyurethane film with high melting point. The abrasive product of the present invention is preferably a pad having a size from about 1"x 2" to about 10"x 10". The pad generally has parallel sides having a plate-like shape defining two broad surfaces, two long sides and two short ends. The abrasive product can be a triangular pad, in the form of a rod or other shapes depending on the applications. The entire abrasive product or components of the abrasive product, as in the substrate, can be washed, as described in U.S. Patent No. 5,460,655, the disclosure of which is incorporated herein by reference, to minimize the release of potentially destructive particles, particularly particles of a size greater than about 0.5 μ, and to minimize the potential release of potentially deleterious ions, particularly chloride, fluoride, sodium, sulfate, sulfite or silicon ions. Specifically, the product is washed so that when the product is immersed in deionized water it releases less than about 36.0 x 10 particles of a size greater than about 0.5 μ per square meter of apparent surface area of the product and less than about 2.5 parts per second. million chloride, fluoride, sodium, sulfate, sulfite or silicon ions. The washing process not only reduces the number of particles released from the product and reduces residual chemical contaminants but also reduces the amount of total non-volatile waste (TNVR) that would be released from the product during use. In general, the laundry process uses a detergent suspended in different molar ratios, such as sodium oxalate, sodium oleate, sodium perchlorate and sodium peroxydisulfate. The detergent solution contains no more than 0.002% of ions including chloride, bromide, sodium and the like. Optionally, the detergent can include oxidants, buffer solutions and moderate acid to optimize the material for specific applications. The preferred temperature range for the laundry process is between about 104 ° F (40 ° C) and about 149 ° F (65 ° C). The complete article can be washed after the final assembly of the components or each of the components of the product, particularly the abrasive layer and the substrate, can be washed individually before
• 10 of the assembly of the product. For example, and not as a limitation, the examples of the present invention will now be given.
Example 1 - Construction of an abrasive pad 15 Micro-Mesh, an abrasive sheet marketed by Micro-Surface Finishing Products, Inc., 1217 West Street, Wilton,
Iowa, was placed on a clean surface with one side
A) abrasive down. The abrasive sheet contained silicon carbide as abrasive particles with a particle size
of 180 grit. Silicon carbide? [sic] PURO Hl, a low melting polyurethane film, marketed by Adhesive Films, Inc. 4 Barnett Road, Pine
Brook, NJ 07058, was deposited on the upper side of the fabric of the abrasive sheet. Then,
PT6100S, a high melting polyurethane film, marketed by Deerfield Urethane, Inc., Route 5 & 10, Box 186 ,, South Deerfield, MA, was placed in the
• top of the polyurethane film with low melting point. Then, four 3.5-inch by 5 4.5-inch movies were cut. The four films were then placed on a hot plate at the controlled temperature of 360 ° F with the abrasive side facing the hot plate. A weight of 10 pounds measuring 4 inches by 5 inches was then placed on top of the hot plate. 10 After 45 seconds, the laminate was removed from the hot plate and cut in one piece with the dimension of 3 inches by 4 inches. Laser analysis .Ablation ICP-MS was performed on the pad by Elemental Research Inc., 309-267 West Esplanade, North Vancouver, British
Columbia, Canada. The Laser Analysis .Ablation ICP-MS is where a layer of material is removed by laser and vaporized. The material goes to a vacuum chamber and is analyzed by mass spectroscopy. The results of the analysis are shown in Table 1 below. twenty
Table 1
• Lithium < 0.01 Beryllium 0.17 Boron 0.2 Sodium 11.0 Magnesium 40.0
Aluminum 170 Sulfur 12.0 Calcium Do not Scandio < 0.1 Titanium 52.0
Vanadium 15.0 Chrome 19.0 Manganese 6.5 Iron 180.0 Cobalt 0.18
Nickel 9.10 Copper 11.0 Zinc < 0.01 Gallium < 0.01 Germanium 0.60 Arsenic 0.65 Selenium < 1
• Bromine 0.08 Rubidium 0.06 Strontium 1.70
Itrium 0.32 Zirconium 2.70
• Niobium < 0.01 Molybdenum 0.51 Ruthenium < 0.01
Rhodium < 0.01 Palladium < 0.01 Silver < 0.01 Cadmium 0.07 Indian < 0.01
Tin 0.22. Antimony 0.05 Tellurium 0.37 Iodine 0.03 Cesium < 0.01 Barium 6.0 Lantano 0.33
• Cerium 0.45 Praseodymium 0.16 Neodymium < 0.01
Europio < 0.01 Samarium 0.05 Gadolinium 0.11
• Terbium 0.04 Disprosium 0.03
Holmium 0.03 Erbium 0.06 Thulium 0.04 Iterbium 0.10 Lutetium 0.02
Hafnium 0.03 Tantalum 0.02 Tungsten < 0.01
Renio < 0.01 Osmium < 0.01 Iridium < 0.01 Platinum 0.04 • Gold < 0.01 Mercury 0.01 Thallium < 0.01
Lead 3.80 Bismuth 0.07 Thorium < 0.01 • Uranium < 0.01
Is the entire pad washed after assembly or are components washed before assembly? The component (only the foam) is washed before assembly.
Example 2: Comparison with Scotchbrite® Some Scotchbrite® pads were subjected to the Ablation ICP-MS laser analysis. The results are shown below in Table 2. 10
Table 2
• Gl-PAD-7447a Gl-PAD-7447b Gl-PAD-7447c
Lithium 32.0 77.0 59.0 Beryllium 2.40 3.20 2.30 Boron 12.0 20.0 14.0 Sodium 520 390 430 Magnesium 2200 3200 2700
Aluminum c p. pr cmp. pr cmp. pr Silicon 3300 5300 4300 Sulfur 32.0 35.0 30.? ' Calcium 56000 65000 62000 Scandium 2.4 4.6 2.0
Titanium 5900 9200 9000 Vanadium 16.0 42.0 46.0 Chrome 530 310 320 Manganese 590 830 710 Iron 6300 8500 8500
Cobalt 0.71 1.50 1.40 Nickel 9.90 13.0 17.0 Copper 29.0 23.0 31.0 Zinc 15.0 19.0 16.0 Gallium 270 51.0 37.0
Germanio 10.0 16.0 15.0
Arsenic 3.10 4.80 20.0
Selenium < 0.01 < 0.01 < 0.01
Bromine 0.10 0.10 0.07
Rubidium 6.20 7.50 5.10
Strontium 170 150 130
Itrium '79.0 99.0 31.0
Zirconium 390 990 480
Niobium 15.0 13.0 4.90
Molybdenum 9.60 6.50 6.30
Ruthenium 0.02 0.02 < 0.01
Rhodium 0.08 0.05 < 0.01
Palladium 2.10 2.70 1.70
Silver 0.46 1.50 0.52
Cadmium 0.21 0.17 0.35
Indian 0.23 0.18 0.41
Tin 18.0 6.90 6.40
Antimony 3.30 3.20 2.80
Tellurium < 0.01 0.19 0.37
Iodine < 0.01 < 0.01 < 0.01
»- ^ - ^ * ^ M ^ .¿w ^^ Cesium 0.07 0.16 0.18
Barium 63.0 89.0 65.0
Lantano 63.0 62.0 47.0
Cerium 210 260 150
Praseodymium 14.0 28.0 14.0
Neodymium 54.0 81.0 46.0
Europium 3.30 4.0 4.0
Samarium 14.0 17.0 12.0
Gadolinium 34.0 43.0 26.0
Terbium 2.40 3.40 2.10
Disprosio 19.0 29.0 13.0
Holmio 3.70 5.50 3.0
Erbium 11.0 17.0 7.60
Tulio 1.90 3.40 1.40
Iterbio 16.0 26.0 16.0
Lutecio 1.60 3.0 1.20
Hafnium 12.0 39.0 15.0
Tantalum 0.09 0.86 0.33
Tungsten 0.41 1.80 0.71
Renio 0.04 0.09 0.16
-... faith .- "ai JU¡t¿t * t i Osmio < 0.01 0.17 < 0.01 Iridium < 0.01 < 0.01 0.03 • Platinum < 0.01 < 0.01 0.11 Gold < 0.01 < 0.01 0.05 Mercury 0.10 0.08 0.22
Thallium < 0.01 < 0.01 0.06 Lead 12.0 23.0 15.0 Bismuth 0.49 0.71 4.0 Thorium 50.0 82.0 50.0 Uranium 12.0 41.0 12.0
Results: As seen in the results of Tables 1-2, the abrasive article of the present invention contains fewer metal ions than the Scotchbrite® 5 pads that were tested.
Claims (12)
- CLAIMS P 1. An abrasive product consisting of: an abrasive layer; 5 a polyurethane film structure bonded to the abrasive layer; and a substrate attached to the structure of the polyurethane film, wherein when the product is immersed in deionized water it releases less than about 36.0 x 10 lv 10 particles of a size greater than about 0.5 μm per square meter of the structure and less than approximately
- 2. 5 parts per million chloride, fluoride, sodium, suflate, sulfite or silicon ions. 2. The product of claim 1, wherein the substrate is an open cell, dissipative, hydrophilic, polyurethane foam.
- 3. The product of claim 1, wherein the structure of the polyurethane film contains at least two layers of polyurethane film, which are • attached 20 yes, and one of which is attached to the abrasive layer.
- 4. The product of claim 3, wherein one layer of polyurethane film contains a high melting polyurethane and the other layer of polyurethane film consists of a low melting polyurethane.
- 5. The product of claim 4, wherein the low melting polyurethane film layer is bonded to the abrasive layer, the polyurethane ^ High melt is bonded to the low melting polyurethane film layer and the substrate is bonded to the layer 5 high-melting polyurethane film.
- The product of claim 1, wherein the abrasive layer contains abrasive particles with a size from about 60 grit to about 1200 grit.
- 7. An abrasive product comprising: w 10 an abrasive layer; a layer of low melting polyurethane bonded to the abrasive layer; a high melting polyurethane layer bonded to the low melting polyurethane layer; and a substrate attached to the high melting point polyurethane layer, wherein the product when immersed in water or deionized releases less than about 36.0 x 10 j particles larger than 0.5 μ per square meter of the structure and less than about 2.5 parts per million 20 of chloride, fluoride, sodium, sulfate, sulfite or silicon ions.
- 8. The method of claim 7, wherein the substrate is an open cell polyurethane foam, dissipative from static, hydrophilic.
- The method of claim 7 further comprises the steps of attaching a first layer of polyurethane film to the surface of the abrasive, joining a second layer of polyurethane film to the first layer of polyurethane film, wherein the first and Second layers of the polyurethane film define the structure of the polyurethane film.
- The method of claim 9, wherein the first layer of polyurethane film is made of a low melting point polyurethane and the second layer of polyurethane is made of a high melting point polyurethane.
- 11. A method for producing an abrasive product, the method comprising the steps of: a) bonding a low melting point polyurethane layer to an abrasive layer; b) attaching a high melting point polyurethane layer to the low melting point polyurethane layer; and c) attaching a substrate to the high melting point polyurethane, wherein the product releases less than about36. 0 x 10 particles of a size greater than about 0.5 μm per square meter of the structure and less than about 2.5 parts per million of chloride, fluoride, sodium, sulfate, sulfite or silicon ions.
- 12. The method of claim 11, wherein the substrate is an open cell, dissipative, hydrophilic, polyurethane foam.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09030169 | 1998-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MXPA00008277A true MXPA00008277A (en) | 2002-07-25 |
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