MXPA97002113A

MXPA97002113A - Method and apparatus for storing data using polarized electric girator

Info

Publication number: MXPA97002113A
Application number: MXPA/A/1997/002113A
Authority: MX
Inventors: D Hurt Thomas; A Halpine Scott
Original assignee: Terastore Inc
Priority date: 1994-09-23
Filing date: 1997-03-20
Publication date: 1998-04-01

Abstract

The present invention relates to a data storage apparatus that includes a substrate, a data storage layer on the substrate and a generating source of rotating polarized electrons. The data storage layer comprises a fixed number of atomic layers of a magnetic material which produces the data storage layer with a magnetic anisotropy perpendicular to the surface of the data storage layer. A magnetic data field is created on the data storage layer. The magnetic data field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. The data is stored in the data storage layer producing a rotating polarized electron having a magnetic field of the electron with a polarization direction corresponding to one of the first and the second data values, the electron having a "characteristic" of length of uneven electron wave in the data storage layer which causes the magnetic moment of the material, and directing the spinning polarized electron the magnetic field of data to impart the polarization direction of the magnetic field of the electron to the magnetic field of data. The data is read from the data storage layer by directing the rotating polarized electron at a second wavelength in the magnetic field of data and detecting a deviation or attraction of the rotating polarizing electron by the magnetic field of data. Alternatively the data is read from the data storage layer by directing the rotating polarized electron in the magnetic field of data so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron

Description

METHOD AND APPARATUS FOR STORING DATA USING ROTATING POLARIZED ELECTRONS BACKGROUND OF THE INVENTION BACKGROUND OF THE INVENTION The present application is a r on. nuac:? on-part of the American application also pending from Thomas D, Hurt and Scott A. HaJpine, entitled DATA STORAGE MEDIA 10 TO STORE DATA AS A POLARIZATION OF A MAGNETIC FIELD * 'OF DATA AND METHOD AND APPARATUS USING ROTATING POLARIZED ELECTRONS TO STORE THE DATA IN THE MEDIA OF DATA STORAGE AND READ THE DATA STORED IN THE SAME, PRect January 31, 1994, Sene No. 08 / 188,828, whose content is go > incorporated in the present description with reference. TECHNICAL FIELD The present invention relates to the storage and retrieval of data. More particularly, the present invention relates to a data storage medium and a method and apparatus for storing the data in the data storage medium and reading the data stored in the data. Art Background Over the years, there has been a need ? 3 increasing of high-speed devices for massive data storage. With the improvement of analog systems in digital systems and the increasing speed of processing demonstrated by the current technology of data processors, the ability to have rapid access to large quantities of data is This is especially true in the scientific world of computer design and simulations, as well as in the consumer world of high definition television (HDTV), HDTV video recordings, assistant Personal communication (PCA), digital tape covers and even items, such blunt automobiles. In addition, the merging of the worlds of computers, multimedia and communication will impact consumers through virtual reality - interactive television, voice recognition systems (vocal systems), writing recognition systems. , and integrated communications with entertainment systems, in which each of them will require the storage of high speed static mass data. The application of conventional techniques and techniques and improvement processes increases 1 of the current memory technologies, has resulted in a progress i nc ementa 1. This progress increases! It will simply increase the disparity between the increasing speed of the proponents and their ability to effectively store and use the required amounts of data.

SUMMARY OF THE INVENTION In accordance with the foregoing, the present invention relates to a data storage medium and a method and apparatus for storing the data in a medium to store data and read the stored data thereof, which solves 4 Substantially one or more of the problems caused by the limitations and disadvantages of prior related art. > The features and advantages of the present invention will be set forth in the following description, and in part, will be appreciated from the deciphering, or may be learned by the practice of the present invention. The objects and other advantages of the present invention will be realized and will achieve by the method and apparatus particularly pointed out in the "" written description and in the rei indications thereof,? < hL as the accompanying drawings .To achieve these and other advantages and in accordance with the purpose of the present invention , as it is incorporated and discloses widely, a data storage apparatus comprises a member that includes a magnetic material; means for generating a beam of the c nes, the electron beam having a common magnetic polarization in one of a first di rec n and a second direction, the beam being able to be directed to one of a ? 0 plurality of member portions; means, which respond to a directed signal, to direct "1 beam to a portion of the member corresponding to the directed signal, and to control the wavelength of the beam elements, so that the portion of the member assumes a magnetic polarization. correspond to the? magnetic polarization of beam electrons; and means, which in response to a directed signal, detect the polarization of that portion of the member corresponding to the directed signal, directing the beam to said portion. According to another aspect of the present invention, a method of operating a system including a member having a magnetic material, and means for generating a beam of C > electrons, the electron beam having a common magnetic polarization in one of a first direction and a second direction, said beam being steerable to one of a plurality of member ions, complying with the method the steps of receiving a directed signal; direct the beam to a portion of the 0 member corresponding to the directed signal and control the wavelength of 3 electrons of the beam, so that the portion of the member assumes a magnetic pollination corresponding to the magnetic polarization of the beam ctrons . ?) In accordance with another aspect of the present invention, a method of operating a system including a member having a magnetic material and means for generating an electron beam, the electron beam having a common magnetic polarization in one of a first direction and second direction, the beam being steerable to one of a plurality of portions of the member, said method comprising the steps of receiving a directed signal; direct the beam to a portion of the member corresponding to the directed signal and control the wavelength of the beam electrons, so that the portion of the member assumes a magnetic polarization corresponding to the magnetic polarization of the «1« u tropwn »« such a beam; and subsequently detecting the polarization of a portion of the member corresponding to the directed signal, directing the beam to said portion. According to another aspect of the present invention, a method for storage of batteries in the form of a polarization re-in a magnetic material, said method comprising the steps of providing a rotating polarized electron, which has a magnetic field of the electron, the magnetic field of the electron having a polarization direction corresponding to one of the first and second data values, the electron having a characteristic of wavelength of uneven electrons causing the magnetic moment of the magnetic material; directing the rotating polarized electron, through an environment that is not electrically conductive, to a portion of the magnetic material to impart the polarization direction of the magnetic field from the electron to the portion.It should be understood that both the above general description and the Detailed description of the invention appearing as a continuation, are presented by way of example and ex-ion and are intended to provide additional information of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included so as to achieve a better understanding of the present invention and are incorporated in and constitute a part of the present description, illustrate a preferred embodiment of the invention and, together with the description serve to explain the principles of the invention. In the drawings: Figure 1 is a cross-sectional view of the cyanate storage and retrieval apparatus of the preferred embodiment of the present invention. Figure 2 is a plan view of a stigmatizing element for use in the data storage and retrieval apparatus of Figure 1; Figures 3 (a) and 3 (b) are partial cross-sectional views of the data sensor means of Figure 1; Figure 4 < a) is a plan view of the data storage means of Figure 1; Figure 4 (b) is a partial cross-sectional view of the data storage means of Figure 1 showing the parking and alignment areas; Figures 5 (a) and 5 < b) are partial cross-sectional views of the data storage means of Figure 1 during a data storage operation; Figures 6 < a > and 6 (b) are partial cross-sectional views of the data storage means of Figure 1 during a first data reading operation; Figures 7 < a) and 7 (b) are partial cross-sectional views of the data storage medium of Figure 1 during a second data reading operation; Figure 8 is a partial cross-sectional view of the data storage and retrieval apparatus of Figure 1 during an alignment operation; Figure 9 is a partial cross-sectional view of the storage and retrieval apparatus of Figure 1 during an intercept / parking operation; Figure 10 is a side-cut view of the preferred electron-emitting apparatus; Figure 11 is a sectional view of the bottom of the apparatus shown in Figure 10; Figure 12 is a bottom view of the apparatus shown in Figure 10; and Figure 13 is a diagram illustrating an alternative embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION Best Method for Carrying Out the Invention We will now refer in detail to the preferred embodiment of the present invention, an example of which is illustrated in the accompanying drawings. Figure 1 illustrates an exemplary embodiment of a data storage and retrieval apparatus of the present invention. The data storage and retrieval apparatus includes a control unit 1, a source of rotating polarized electrons 40 having a tip 2b, an extractor 4, the collimators 6, 7 and 9, the electretic lenses 10, 11 and 12 , and the insulating elements 5 and 8. The data storage and retrieval apparatus also further comprises a draft element 13, the coarse and fine mi-deviators 14 and 15, respectively, an electron detector 16, a data storage layer. 17 and a substrate 18. The control unit 1 includes a microprocessor or other control circuit known in the art. The control unit 1 coordinates and establishes the sequence of the different functions and operations performed by the data storage and retrieval apparatus, as will be explained in more detail below. The control unit 1 further serves to interface the storage and retrieval apparatus with an external apparatus (not shown), such as a computer or even another data storage and retrieval device, by means of the ADDRESS IN terminals. (entry of command, address), DATA IN (data entry) and DATA OUT (data output). through this interface, control signals and data from the external device can be transmitted and decoded. set by control unit 1 using the necessary protocols. The control unit 1 can develop control and data responses and return data to the external device using the necessary protocols. It is contemplated that the control unit 1 may be in interface with the external apparatus by means of, for example, electrical or optical links. For example, the optical transmission in and out of the control unit 1 can be carried out using diodes of the electric pumped. The generating source of rotating polarized electrons 40, which includes the tip 2b, produces the polarized rotating electrons 3. In particular, the polarized rotating electrons 3 are developed by the generating source of rotating poised electrons 40 and are collected at the tip 2n . The tip 2b is a sharp modulated point of autopolapzation for the emission of electrons (ie low energy, as will be described in more detail later in this description.) Each of the spinning polarized electrons 3 has a magnetic field of the electron with a polarization direction determined by the rotation of the electron The polarization direction of the magnetic field of the electron corresponds to one of the first and second data values For example, a magnetic field of the polarized upward electron may correspond to a data value of " 1"while a magnetic field of the polarized downward electron may correspond to a data value of" 0", or vice versa.

A potential i is applied to the generating source of rotating polarized electrons 40 by the control unit 1. The force of the potential x can be supplied by the control unit 1 to control the intensity and current of the rotating polarized electrons 3. A signal S_, < * is also applied to the generating source of rotating polarized electrons 40 by the control unit 1. The signal St < ? > it controls the direction of the rotating polarized electrons of the rotating electrons 3. Preferably, the control unit 1 can vary the potential i and the signal S < f during the operation of the device to compensate for physical changes in the device and its environment over time. The extractor 4, the collimators fe, 7 and 9, the electrostatic lenses from 10 to 12, the eraser element 13 and the coarse and fine micro-routers 14 and 15, respectively constitute each one, for example a conductive electric annular member. which defines an opening. The extractor 4 extracts the rotating polarized electrons 3 from the tip lb and the collimators 6, 7 and 9 which collimate with the rotating polarized electrons 3 within the rotating polarized electron beam 19. The electrostatic lenses from 10 to 12 focus the electron beam rotary polarized 19 and the coarse and fine microdevices 14 and 15, respectively, direct the beam i rotating polarized electrons 19 to the data storage layer 17. The environment through which the beam of polarized electrons travels gi temporarily 19 it is preferably an environment that is not a conductive environment and is not an electric ionizing environment, such as a wand. It is contemplated, however, that the environment through which the rotating polarized electron beam 19 travels can be any number of other environments known in the art which would not degrade, but may increase, the passage of the polarized electron beam. rotary 19 from the electron generating source 1 to the data storage means 37. As illustrated in Figure 1, the tip lb is positioned so that it is perpendicular to the plane of the surface w the extractor 4, in the center of the opening of the extractor 4, and juxtaposed on, or near the surface of the extractor 4. Preferably, the openings of the extractor 4 and the collimator A are of the order of one miera at 100 microns in diameter respectively. However, larger or smaller diameters could also be used depending on the particular design of the storage and recovery apparatus and the desired characteristics of the spinning polarized electron beam 19. The insulating element 5, which comprises for example, Si , or similar, is placed between the extractor 4 and the collimator 6 to separate its conductive surfaces. Preferably, the diameter of the opening of the insulating element 5 is slightly greater than the diameters of the openings of the extractor 4 and the impeller 6 in order to reduce the interaction of the insulating element 5 with the electrostatic fields produced in and the electrons that they pass through the openings of the extractor 4 and the collimator 6. The potentials Va and V are applied by the control unit 1 to the extractor 4 and the collimator 6, respectively, to create a magnetic field in the opening of each one. The position of the tip 2B in relation to the electrostatic field e3 produced in the opening of the extractor 4 induces the spinning polarized electrons 3 to jump to the tip 2b and pass through the opening of the extractor 4 to the opening of the collimator 6. collimator é > It focuses electrons in relatively parallel trajectories towards the data storage layer. The collimators 7 and 9 and the insulating element 8, which can be similar or identical to the extractor 4, the collimator 6 and the insulating element 3, respectively, constitute a stage of optional lenses to help in the collimation of the rotating polarized electrons 3 within the spinning electron beam of electrons 19. The collimators 7 and 9 and the insulator element 8 can also be used to accelerate or decelerate the rotating polarized electrons 3 ccan the object of obtaining the energy desired the electron beam. The potentiates from a to V »can be adjusted by the control unit 1 in order to obtain the desired characteristics of the rotating polarized electrons 3 and the rotating polarized beam 19. The control of the Va-ß potentials can be carried out during the operation of the device to compensate for physical changes in the device and its environment over time. After passing through the impelling roll 9, the rotating polar beam of electrons 19 passes through the electrostatic lenses from 10 to 12. The potentials of the V *, to the Vß are applied to the electrostatic lenses from 10 to 32, respectively, by the control unit I to create the electrostatic c mpos through the apertures of the lenses. These electrostatic fields focus the beam of rotating polarized electrons 19 c to a desired diameter, for example, from 1 to 25 nanometers. The openings of the slow electrostics of 1? at 12 they are preferably of the order of 10 to 100 ml of 1, • ... '/ diameter but may vary depending on the particular design of the storage and retrieval time and the desired characteristics, for example, intensification, beam shape, etc., of the rotating polarized electron beam 19. In addition, the thicknesses of the electrostatic lenses from 10 to 12, their relative positions, and potential lenses from V * to Vß can be varied with the tasting OBJECT OF OBTAINING THE DESIRED CHARACTERISTICS OF THE ROTARY POLARIZED ELECTRONIC BEAM 19. Again, the ciel V * to Vß potentials can be varied by the control unit 1 during the operation of the apparatus in order to compensate for the physical changes in the apparatus and Your environment can change over time In addition, electrostatic lenses from 10 to 12 can be replaced with a few or more of these lenses. Also, magnetic lenses can be used instead of, or in addition to the electrostatic lenses from 10 to 12, the extractor and read collimators 6, 7 and 9. After passing through the electrostatic lenses , 12, the beam of rotating polarized electrons 19 passes through the eraser element 13. As will be explained in more detail below, the eraser element 13 is an optional element which inhibits the effects of the beam of rotating polarized electrons 19. local i. The preferred portion of the eraser 13 is on top of the thick microdrayer 14, as illustrated in Figure 1, to allow the spinning electron beam 19 to achieve a stable condition. After passing through the draft element 13, the beam of rotating polarized electrons 19 passes through the coarse microdispersion 14 and then the fine icrodeviator 15.

Preferably, the coarse squeezing instrument 14 comprises ochca poles and "* a individually controlled by the signals from Sa to S > s > provided by the control unit 1. Similarly, the fine haul 14 also comprises pref It is also possible to control the poles controlled indi idually by the signals from Sio to S? 7 also supplied by the control unit 1. The coarse and fine micra deviators 14 and 15, respectively, direct the rotating polarized electrode beam 19 towards the storage layer of FIG. data 17. While the thick micro-shipper 14 '"' doubles the beam path of rotating polarized electronics 19 to a general area in the data storage layer 17, the thin icro-deflector 15 further adjusts the trajectory of the beam of rotating polarized electrons 19 to direct the beam of spinning polarizing electrons 19 to a specific area of the data storage layer 17. The distortions and aberrations introduced in the electron beam The rotationally polarized 19 can be reduced, gradually endows the beam of rotating polarized electrons 19 in this manner. It is contemplated that farm micro-deviator 15 can disable beam placement of rotating polarized electrons 19 at the atomic level in the datca storage layer 17. Although the microclimbers coarse and farm 14 and 15, respectively, have been described as comprising each pole, it is contemplated that the trackers 14 and 15, respectively, may have other configurations known in the art. In addition, the relative positions of microdevelopmental lees 14 and 15, respectively, and the area of the data storage layer 17 can be determined as a function of the scanning range of the X-Y axis of the rotating polarizing electron beam 19. Although not is illustrated in Figure 1, the data storage and retrieval apparatus may further comprise a stigmatized element such as that illustrated in Figure 2. Preferably, the stigmatized element is placed either between the electrostatic lenses 12 and the draft element 13 ac between the draft element 13 and the coarse microdetector 14. As illustrated in Figure 2, the stigmatized element comprises, for example, an electrically conductive material that generates an electrostatic field in the aperture formed by the Eight elements are biased 25 biased and divided with potentials from Via to Vi. It is contemplated that the stigmatized element 25 may have other configurations known in the art. The individual potentials of Vta to Vx * are applied to the poles of the stigmatized element 25 by the control unit 1 and are prepared during the operation of the apparatus to develop a field resulting in a desired shape of the rotating polarized electron beam 19 and for compensate for physical changes in the data storage and retrieval apparatus and its environment over time. Although the stigmatized elementca is generally used to produce the polar electron beam i. With a round transverse shape, the stigmatized element can also be used to produce the pealari electron beam. revolving tables 19 with a transverse shape that is not redeanda, por, <# # Example, oval. The electron detector 16 comprises a conductive electrical material, such as a metal, and is configured, for example, as illustrated in FIG. 1, for the purpose of optimizing the detection of the transmitted electrics of, or read, secondary electrons emitted by the electrons. the data storage layer .17. Preferably, the electron collector 16 is positioned to interfere with the path of the rotating polarized electron beam 19, but sufficiently crecks the data storage layer 17 to detect the deviated electrons ca emitted. The electrons that collide in the electron detector 16 produce a signal in the electron detector 16, which is supplied to the control unit as a Yes signal. The data storage layer 17 and the substrate 18 together constitute a data storage medium.

Preferably, the data storage layer 17 is deposited on the substrate 18, by means of, for example, sputtering, laser ablation, or other technique known in the art. The substrate 18 comprises a deformed layer 29, a path signaling layer 30, and a material that is neither magnetic nor conductive electrical, such as a glass. or ceramic, which serves as a mechanical buffer for the data storage layer 17, the deformed layer 19, the path signaling layer 30. The data storage layer 17 comprises a fixed amount of atomic layers of a magnetic material , where the number of atomic layers fixed produces the layer of The data storage 17 with a magnetic anisotropy perpendicular to its surface, for example, along its easy path due to the deformed micrometric distance imposed by the deformed layer 29. For example, in the case where. the data storage layer 17 comprises Fe, three atomic layers of Fe distributed in a centered-centered tetragonal reticle produces the data storage layer with a strong Z-axis magnetic moment when deposited over a suitable defearmada layer such as, for example, Ir. Fe begins to change, however to a lattice cubic with the face centered (fc) in numbers of atomic layers greater than three, which causes the magnetic anisotropy of Fe atoms to change to the X - Y plane. Similar results can be achieved by combining Fe with certain lubricating or alloying elements, such as Co or Ni or varying the number of layers. Because of the perpendicular magnetic isotropy of the storage layer 17, each of the lattices of the atoms in the data storage layer 17 creates a magnetic field of data having a polarization extending along the length of the magnetic field. its easy axis, for example, perpendicular to the surface of the storage layer of datasets 17. These magnetic data fields are illustrated (in a representative manner in Figure 3 (a) as the data magnetic fields. magnetic fields produced by the polarized electrons »rotating 3, each of the magnetic data fields created in the data storage layer 17 has a polarization signal corresponding to one of the first and second data values. , an upwardly polarized data magnetic field may correspond to the data value of "1" while a magnetic field of data polarized downwards may correspond to the value of e data "0", or vice versa. With this distribution, the portions of the storage layer ci datcas 17 stores the data in one of two conditions, for example, the first and second directions of the magnetic polarity. It is contemplated that these portions of the data storage layer may be as small as the width of an atom by the thickness of three lines. As illustrated in Figures 4 (a) and 4 (b), the data storage layer 17 includes a plurality of alignment area 22 and a parking area 21. Each of the alignment areas 22 and the area The parking areas comprise an electrically isolated conductive electrical material 27 from the data storage layer 17 by an insulator 28. The alignment areas 22 and the parking area 21 are used to carry out the alignment, parking and erasing operations, the which will be described in more detail below. The VIO potential of the parking area 21 and the potential Vi »of the alignment areas 11 are detected by the control unit. 1, as illustrated in Figure 1. Preferably, the datum storage layer 17 has a flat surface. It is contemplated that the data storage medium may have any number of shapes on the surface, a three-dimensional curved surface, so that all points in the data storage layer are approximately equidistant from the center of the fine aperture., thereby reducing the travel time of electron lenses and producing a uniform depth of focus with the electron beam on the entire surface of the data storage layer. The storage of data in the storage and retrieval apparatus of figures of Figure 1 is carried out in the following manner. The controller 1 receives a directed signal and a data entry signal. The generating source of rotating polarized electrons 40 produces the rotating polarized electrons 3 with a polarization direction corresponding to one of a first and second data value, depending on the data input signal. Next, the extractor 4 extracts the rotating polarized electrons 3 from the tip 2b, the 6, 7 and 9 collimators of the electron magnet. polar rotating polarized 3 in a beam of rotating polarized electrons 19, and electrostatic lenses 10 through 12 focus on the rotating polarized electron beam 19. As illustrated in Figure 5 (a), the spinning polarized electron beam 19 is directed by the micro-deviators 14 and 15 to a magnetic data field created in the portion of the datum storage layer 17 in which data are to be stored. The controller 1 uses an address signal to determine the portion in which the data will be stored.

As illustrated in Figure 5 (b> 1. collision with the magnetic field 2 of data with the correct wavelength, the beam with electrons? "O3 revolving arils 19 hits the surface of the data storage layer. 17 causing a reverse cascade effect in the field along the easy magnetization ee producing the magnetic field of Jatos As a result, the polarization direction of the electrons in the rotating polarized electron beam 19 is In order to achieve the reverse cascade effect in the field, the wavelength of the electrons in the beam of electrons revolving peal 19 must be established according to the material used for the storage layer of the magnetic field. data 17. In particular, the wavelength of the rotating polarized electron beam 19 should be approximately equal to the wavelengths of Broglie of the electrons in the outer ßubeapa of the atoms of The material used for the data storage layer 17. In other words, the energy of the ^ beam should be approximately equal to the kinetic energy of the electrons in the outer sub-layer d of the atoms of the material used for the data storage layer 17. As explained above, portions of the storage layer are contemplated. However, it is also contemplated that portions of the data storage layer 17 of the width of multiple atoms may also represent a single data value, such as data that is as small as the width of an atom. is illustrated schematically in Figure 3 (b). If the atoms in the data storage layer 17 are grouped as such, the diameter of the rotating polarized electron beam 19 must be large enough to accommodate the larger areas of data storage The reading of the data from the data storage layer 17 can be carried out using a technical technique. To read the data, the control 1 receives a signal. The generating source of rotating polarized electrons 40 produces the polarized rotating electrons 3 with a polarization direction corresponding to one of a first and second data path. Then the extractor 4 extracts the polarized rotating electrons 3 from the tip 2b, the collimators 6, 7 and 9 collimate the rotating polaric electrons 3 in a beam of rotating polarized electrons 19, and the electrostatic lenses from 10 to 17 focus the beam of polarizing polarized electrons 19. The rotating polarized electron beam 19 is then directed by the micro-deviators 14 and 15 to the side of the data storage layer 17 from which the data will be read. The controller 1 uses the address signal to determine the portion in which the data will be read. As shown in Figure 6 (a), if the direction of polarization of the magnetic field of data of the portion to be read is the same as the direction of polarization of the electrons in the rotating polarized electron beam 19 , electrons in the beam of rotating polarized electrons 19 are attracted by the magnetic field of data and absorbed by the data storage layer 17. The absorption of electrons < Attaching the data storage layer 17 results in the generation of the signal S30- Comea is illustrated in Figure 6 (b), if the direction of polarization of the magnetic field of data is opposite to the direction of polarization of the electrics in the beam. of rotating polarized electrons 19, the electrons in the rotating polarized electron beam 19 are deviated by the magnetic field of data and collide with the electron cietector 16. Comea explained earlier the collision of electrons with the electron detector gives as a result the generation of the signal Si *. The attraction of the electrons of the rotating polarized elec- tricity beam 19 by the magnetic data field is detected by the control unit 1 as the first data value, for example, a data value of "0", while the deviation of the beam electrcanes. of electrons pealari. rotary banks 19 the magnetic field of data is detected by the control unit 1 as a second value of data, for example, a data value of "1". Specifically, the control unit 1 detects and interprets the signal 5? Β, the signal Sao »or both the signal Si» and the signal Sao at a fixed time in relation to the generation of the rotating polarized electrons 3 and, therefore, , at a fixed time relative to the impact of the spinning polarizing electron beam 19 with the data storage layer 17. If the signal Sx m is not detected and / or the voltage V »© is detected by the control unit 1 in a specified time after the generation of the rotating polarized electrons 3, the control unit 1 determines that the electrons of the rotating polarized electron beam 19 have been attracted by the magnetic field of data and absorbed by the datum storage layer 17. On the other hand, if the signal Sia is detected and / or the signal Sa © is not detected by the control unit 1 at a specified time after the generation of the spinning polarized electrons 3, the co Control 1 determines that the electrons of the rotating polarized electron beam 19 have been deflected by the magnetic field of data and detected by the electron detector 16. Preferably, the electrons in excrescence in the data storage layer 17 are drained, for example , in the electrode that produces the signal Sa while the excess electrons in the electron detector 16 are drained, for example, in the electrode that produces the signal S »a. As was the shell when the data was stored, when the data of the data storage layer 17 is read using the first technique, the energy level of the rotating polarized electron beam 19 must be established according to the material] used for the data storage layer 17. However, when the data is read using the first technique, the energy level of the rotating polarized electron beam 19 must be sufficiently low to not cause an agnatic change to the magnetic fields of creed data in the data storage layer 17. In the second data reading technique, the generating source of rotating polarized electrons 40 produces the polarized rotating electrons 3 with a polarization direction corresponding to one of the first and second a second data value. Next, the extractor 4 extracts the rotating polarized electrons 3 from the tip 2t >; The collimators 6, 7 and 9 collimate the rotating polarized electrons 3 in a beam of electrons pealan zadeas giratorios 19, and the electrostatic lenses 10 to 12 focus the beam of rotating polarized electrons 19. The beam of rotating polarized electrons 19 is luegea directed by the icons 14 and 15 to the portion of the data storage layer 17 from which the data will be read. In this second technique, the energy of the rotating polarized electron beam 19 is a value greater than the value of the data storage operation and sufficiently large for the electron beam of polarized gi ratéanos 19 to penetrate the portion of the rapa of data storage 17 causing the portion of the datca storage layer 17 to produce secondary electrons. Preferably, the energy of the rotating polarized electron beam 19 should not be so high as to cause thermal migration of the atoms in the lattices of the data storage layer 17. The secondary electrons produced by the data storage layer 17 have a specific energy and rotation, which are eristic facets of the relationship between the direction of polarization of the magnetic field of data generated by the portion of the storage layer of dates 17 and the direction dßt pcalari. zac ion of electrons in the rotating polarized electron beam 1.9. These characteristics of secondary electrons are detected as one of a first and second values of cytos. For example, as illustrated in Figure 7 (a), if the direction of polarization of the magnetic field of cyanates is the same as the polarization prediction of electrons in the rotating polarized electron beam 19, the storage layer of data 17 produces the secondary electrons 24 that have the characteristics of a first energy and a • • • first rotation corresponding to the first data value, for example, a data value cié "1" .From a similar measurement, comma is illustrated in Figure 7 (b), if the direction of polarization of the magnetic field of data is opposite to the direction of polarization of the electrons of the beam of polar polarized electrons 19, the storage layer of data 17 produces secondary electrons 26 having the characteristics of a second energy and second rotation corresponding to the second value of data, for example, a value of "0" cells. The secondary electrons produced by the data storage layer 17 are blocked by the detector 16 to produce the signal S ", which indicates the characteristics of the secondary electrons. The control unit 1, upon receiving the signal S.a., interprets the characteristics of the secondary electrons, although this second technique has been described, as it detects the characteristics s of energy and rotation of the secondary electrons produced by the storage layer 2? of data 17, it is contemplated that in order to read the data stored in the data storage layer 17, it can be detected after characteristics of secondary electron readings, known in the art. In addition, although most of the secondary electrons produced by the storage layer (ie data 17 are emitted by the data storage layer 17, as illustrated in FIGS. 7 (a) and 7 (la), some electrcans In this way, it is contemplated that the characteristics of the secondary electrons produced by the data storage layer 17 can also be detected and interpreted by the unit. of control 1 by medica of * the signal Sao »Co ea is illustrated in Figure 8, the beam alignment of rotating polarized electrons 19 is performed by directing the electron beam in one more ca of the alignment areas 72. When the potential V is detected by control unit 1, the areas of directed and programmed alignment coincide.If the potential V »» is not detected, the »signals from S2 to S17 of micradesv i ars 14 and 15 can be adjusted by the unit (He control with the object to compensate for any misalignment. Preferably, the beam alignment of rotating polarized electrons 19 occurs periodically during the operation of the apparatus. As described above, the interference element 13, under the control of the control unit 1, prevents the rotating polarized electron beam 19 from hitting the data storage layer 17. The element of 13 comprises, for example, two poles controlled by the signal Si. It is contemplated that the interference element 13 may have other configurations known in the art and that the buttons may be controlled individually. The control unit 1 applies the signal S »to the interference element 13 at a specific time and for a specific duration to interfere with the rotating polarized electron beam 19 while being moved by the micro-devices 14 and 15 to direct it to a portion different from the data storage layer 17. The interference element 1.3 can also be used to interfere with the beam of rotating polarized electrons 19 during a data reading operation when the control unit 1 is detecting whether or not they are, being The electrons are diverted or emitted by the data storage layer 17. Leas poles of the interference element 13 acts to diffuse the electron beam • a rotary polarized 19 so that the electrodes of the electrode beam do not collide with the surface of the data storage layer 17 in the form of a beam with electrons. It is contemplated that microdevelopers 14 and 15 may alternatively be used to perform the interference of the rotating polarized electron beam 19 during data read operations. For example, the control unit 1 can supply the signals from the Sa to the Irodestructors 14 and 15 to cause the beam of rotating poly-reactors 19 to be directed to a particular area in the data storage layer 17. that is not used for data storage, for example, the area of this ionization 1, as illustrated in Figure 9. The shock of the rotating polarized electron beam 19 with the parking area 21 is detected by the control unit 1 as the potential VÍO. There may be imperfections in the data storage layer 17 as a result of manufacturing, degradation, or other causes which result in more areas being spoiled in the storage layer 17 that can not be used to store the data. In accordance with this, a "stitch operation" is provided to prevent reading and storage of data in those damaged areas, eg, during the stoma operation, the control unit 1 cycles each of the magnetic fields of datcas created in the data storage layer 17 between polarities above and below, at least once and verifies each of the results.This formatting operation can be performed, for example, by successively using the data reading operation and data storage described above The control unit 1 determines whether certain portions of the data store layer 17 can be used, of which the written data can not be reliably read at the end of the formatting operation. , the Idealizations of the portions that can be used of the layer of the acetone of contents are stored in a memory which is conserved, for example, by to control unit 1 for use in determining where data can be stored 79 gir nt the subsequent data storage operations. It is contemplated that the array operation may detect and store the 1 locations of the unusable portions of the data storage layer 17 during the operation of the data storage and retrieval apparatus. For example, after each storage operation within a portion of the data storage layer 17, the control unit 1 could then read the portion, to verify that the portion is not really defective. The control unit 1 can also use memory to store the inaccuracies of the portions of the data storage layer 17 which are used to store and protect the data, which are read frequently but which are not stored frequently. . The examples of this data packet stored in the current storage medicines are stored in the ROM memory: this type of data is stored in the portions of the memory storage layer. These are protected as designated in the memory.As an additional precaution to prevent unintentional changes to the protected data, certain portions of the data storage layer 17 may comprise an alternate material for the storage layer. (J data 17. This alternate material would require a different intensity of the beam of rotating polarized electrons to store the data, at the intensity required for the 1caca 11 zac ions of data '' "" isprogids. In this fashion, both in access to the memory of the control unit, (modifying the intensity of the rotating polarized electron beam requires a path of protection of said protected data. Although polarization of longitudinal rotation has been illustrated, however, transverse polarization can also be used.The polarization of the transverse rotating polarization electron beam requires that the magnetic moments in the media be parallel / anti-parallel with the polarization. of the electron beam and that the magnetic coupling between the storage areas is insufficient to interfere with the interactions of the electron beam / medium.An advantage achieved by the described method and apparatus is the elimination of moving parts. It is contemplated that the addition of certain mechanisms, it could be argued that the layer of storage of (.on respect to the electron beam. This movement could d <The rotation of the data storage layer, the exchange of a data storage layer by another, or other implementations known in the art may result in the formation apparatus being moved. electron beam, the potentials from Va to Vß and from Vxa to Vi * and the signals from Sa to S, from S »0 to 3 B 7. and Rtß have preferentially adjustable rods of bi roast. used to compensate for the location of misalignment, the origin of the electron beam and the effects that can be corrected to the rotating polarized electron beam 19, caused by other elements. (ie said element in the rotating polarized elec- tricity beam 19, by changing the intensity of the field within the opening of the element.) Preferably, the lagging adjustments are made by the control unit 1 during operation of the apparatus. They occur in a specific order when the reading and writing functions can not determine or modify the polarity (ie a magnetic field of data created in the data storage layer 17. The quantity of this (biasadea's composition for each element is determined by the necessary adjustments to refocus the intensity, the length of the beam, and the cross-section of the rotating polarized electron beam 19 in the layer (ie the storage space) (ie datcas 17 so that a magnetic field of data can be modified and read. Figure 10 shows the electron emitting apparatus 40 in greater detail. The tip 2b is a modulated self-polarizing sharp tip for the emission of ele < low-energy pulses polarized longitudinally, the electrons having an axis of rotation parallel to the emission path. The substratum 2a is for the external assembly of the tip 2b and is the basic component on which the remaining speakers of the tip are manufactured. The substrate 2a includes silieone dioxide (S1O3), which electrically separates the magnetizing layers 31 from the conductive layers 33 near the extension 33a, the electrical contac for the conductive layer 33. The insulating layer 32, shown in the Figure 12, is; - on the magnetizing layer 31 and extending beyond the end of the magnetizing layer 31? erc of the extension of the magnetizing layer 33a. the insulating layer 32 includes S? Oa, which insulates the currents in the magneto layer 31 and the conductive layer 33. The conductive layer 33 is an ultra-thin film of ferromagnetic material, such as Fe, deposited on the insulating layer 32. , by an MBF method or another method known in the art. The conductive layer 33 is preferably a single magnetic domain. The extensions of the magneto layer 31 and the extension of the conductive layer 33 are connected elé < The magnetic layer 31 and the conductive layer 33, respectively, are processed. Figure 11 shows a sectional view of the electron-emitting apparatus 40 seen along the line A ~ A shown in Figure 10. (Figure 10 f- a sectional view seen along the line BB shown in FIG. Figure 11). The aggregating layer 31 is a metallic conductive material, such chrome Au, deposited on the substrate 7a through a lithographic mask using the molecular epitaxy of the electron beam (MBE). The magnetizing layer 31 includes a series of indigo planes with two electrical connectors outside the plane for signaling the Si * voltage. Figure 17 shows two electrical connection areas for the signal Si * in the extension of the magnetic layer 31a, an extension out of the plane of the magneto layer 31, an electrical connection area for the voltage generating source Vi is on the extension of the conductive layer 31, an extension out of the plan for the conductive layer 33 (See also Figure 10). The electrical connections are welded eiirec to the extension of the agnet izadcara layer 31a and the extension of the 33a conductive layer with indium welding or other suitable canocidca material in the art The tip 2b is a sharp tip for conducting the material that may have epi-taxately grown to the conductive layer 33. An integral connection between the tip 2b and the conductive layer 33 prevents the inter electrical phase between the conductive layer 33 and the tip 2b, thus mitigating the dispersion of the electron withdrawals that "cross the interface between the apa 33 and the tip 2b and a variable impecJance derived by the rotation to the flow of the polarized rotating electron within the tip 2b. As a result, more electrons cross the interphase with its conserved polarization, no initial magnification of the tip 2b to any of its components is required, the signal Si, which is an alternating polarity voltage. ], is connected to the electrical connection areas of the extension of the magnetic ramp i zadcara 31a adjacent to the substrate 7a A current * I? <; s > it flows through an electrical connection area of the magnetizing layer 31, through the concentric rings and out of the second electrical connection VMA of the magneto layer 31. The current IiV establishes a magnetic field below and above the plane The magnetic field generated is perpendicularly spread through the insulator layer 37 and the conductive layer 33. The conductive layer 33 is magnetized in a first direction as a result of the direction of the flux of the conductor. Itv current in the magneto layer 31. After the signaling voltage Si * is removed, the conductive layer 33 will remain magnetized because it is a paramagnetic material The signaling voltage SiV is an alternating polarity voltage that is Control the controller 1 so that it is in phase with the operation in progress of the device.

J- ~ signaling voltage If * is changed to the opposite polarity by the control 1, the conductive circuit 33 is magnetized and in a second direction or direction (bets the current I »of the electric power source supplied to the conductive layer 33 becomes polarized by the intrinsic magnetization of the conductive layer 33. The rotational in polarity current is extracted from the tip 2b at the sharp point due to the penetration of the sharp point of the tip by the gradient The electrical field gradient of the tip 2b is the largest.The conductors of the currents can be electrons or holes.The following explanation describes the electrons.The ßubeapa 3d of an atelier of Faith has 5 electrons of a rotation and a sixth electron of opposite rotation.The electron rotate develops a magnetic moment through the intrinsic angular molecule that is separated and approximately twice the magnitude of the angular orbital moment. Each anode of the electrons has a resulting magnetic moment due to this angular intrinsic moment that is aligned to form the atomic magnetic moment. The first five electrons in the 3d sub of an atom of Fe align their rotation and their resulting magnetic moments with the outer field developed by the magnetic layer 31 and become parallel to it (within the constraints of the orbital structure). of the atomic electron). The sixth rotation is antiparallel to the first 5, canceling a magnetic moment of the electron. The current includes electrons that have random rotations. Thus, when the current flows through a thin flat film perpendicularly penetrated by an external magnetic field, the current becomes polarized. Comes results, the electrons that flow through the conductive layer 33 are of polarized rotation. The components of the tip can have any configuration, provided that the axis of magnetization through the conductive layer 33, the c to polarize the rotations, is ^ Juxtaposed longiudinally ion the emitting surface.

Alternately, the generation of polarized transverse electrons can be developed through the manufacture of the tip components in a slightly modified configuration of the preferred embodiment. In this alternative embodiment, the magnetization e via a conductive layer is juxtaposed perpendicularly with the emi-ora surface. In general, the generating source of rotating polarized electrons can be any "source for producing known rotationally polarized electrons in the art.

It can be, for example, the purtta of a mac.rcasc.op io scan of electrcanes or another similar device.

Preferably, the tip has a small diameter, such as the diameter of a single atom. Although a flat layer of data storage 17 has been illustrated, it is contemplated that other shapes and configurations may be used. For example, the magnetic medium can be segmented into a rib (such geometrical forms such as tiles, cones, pyramids, cylinders, spheres, cubes or other irregular shapes which may or may not be electrically isolated from one another. Geometric formations can have any form, provided that the magnetic ee of the electrons in the electron beam is parallel to the magnetic ee of the atoms illuminated in the geometric formation Figure 13 shows a portion of an alternative embodiment of the present invention. The cylinders 35 include --- a ferromagnetic material in a substrate 34. The easy magnetic axis of the cylinders 35 can be longitudinal.This easy magnet is oriented parallel lonely with the polarized electrically rotating electrons beam 19 with The aim is to polarize the magnetic axis of cylinders 35. Co another alternative, the magnetic medium could be formations in the form of empty cones and tabs in a regular distribution on the surface. A magnetic axis of the cones could be parallel to the plane of the surface, requiring the rotating polarized electrons that are cross-polled in the electron beam to polarize the magnetic axes of the lenses. Magnetic faith, it can be used as a magnetic medicine for any metal with multiple electrons, or for ranges of binding energies that are mixed together of the electrons (ie, the sulalayer fos with that of the outer sub-dape, and which can be used to display a distorted structure, such as bc, in a few atomic passages, so that the magnetic moment (Jel magnetic is c used for the rotation of the metal component of electron lees of the outer subframe * d in the middle. The candidate metals for the magnetic medium can come from three transition series of the periodic table, for example, the candidate metals coming from 13 the 3d series can include Cea and Ni. In a similar way, the candidate metals of the 4d and 5d series may include Mo and Ir, respectfully. In these metals, electrons fill the next outer rubeapa for the sub-layers of the next outer layer. 2? before the outer sub-step d is filled. For 3d, the electrons determine the chemical properties of the atom, while the electrons determine the magnetic properties of the atom. In general, the electrons of the outer updra d remain uneven whenever possible. the The first cutí or electrons in the «ubi apa have parallel rotations, each one added to the magnetic moment of the atom. The successor electrons must be antiparalphals as 3R can be noticed by the analysis of the fourth rail interaction The quantum phase with the lower electron energy conchae ions These parallel ant i electrons pair with the first electrons and cancel their magnetic moments, and experts in the art will appreciate that there can be It is intended that the present invention cover the modi fi cations and variations of the present invention without departing from the spirit or scope of the present invention. of the expiration whenever you are are within the scope of the appended claims and their equivalents. fifteen ? o V "a

Claims

R E I V I N D I C A C I O N S 1. A data storage device, which includes a member that includes a magnetic material; means for generating * an electron beam, the electron beam having a common magnetic polarization in one of u to the first direction and a second direction, with the electron beam being steerable to one of a plurality of portions of the member? means, which respond to a directed signal, to direct the electron beam to a portion of the member corresponding to the signal iiia, and to control the beam length of the beam electrons so that the member portion assumes a magnetic polarization corresponding to the magnetic polarization of the ltrons of the beam; and means, which respond to a directed signal, to detect the pollination of a portion of the member corresponding to the signal di r * jg? gives, directing the elec- tric beam to that portion.
2. The apparatus as described in Rei Indication 1, characterized atiemás because the mi embrea includes a substrate; and a plurality of layer-. atomic ci a magnetic material on the substrate, having the fixed number of atomic layers a magnetic anisotropy perpendicular to the substrate surface.
3. Apparatus sand (blunt is described in Rei indiction 4o 2, character or in addition because the layers include distributed Fe "* a centered tetragonal reticle body has an average thickness of three atomic rapes. it appears as described in Rei indicin 1, further characterized in that the member includes at least one metal of the three senes (ie transition of the periodic table) 5. The apparatus as described Claim 1, further characterized in that the member includes at least one of Co, Ni, Ir, and Mo. 6. The apparatus as described in the Rei indication 1, character also because the member also includes an area of ineacic'an. 7. The apparatus as described in the letter will indicate 6. further characterized in that the a3meac? on area comprises an electrically coniluttor * material, electrically isolated from the layers. 8. The aparate »sand eat is described in the Rei indication i, 1, also characterized because the member defines \ WA flat surface. 9. The apparatus as described in the Claim 1, further characterized in that the space between the member and the generating means of the electron beam is an environment that is not electrically conductive. 10. Sapparatus and chrome is described in Claim 1, further characterized because the detection means include means to detect one of a deviation of the electron beam when the direction of polarization of the portion is opposite to the direction Ar - v.j.-. polarization of the beam of the ctrons; and an electron beam attraction when the polarization direction of the portion is in the same direction as the electron beam polarization. 11. The apparatus and method are described in Claim 1, further characterized in that the detection means include: means for directing the electron beam to the portion to produce secondary electrons having a first - characteristic when the direction of polarization of the portion is opposite to the direction of polarization of the electron beam, and a second characteristic when the direction of polarization of the portion is the same as the direction of polarization of electron beam; and means for detecting the first or second characteristic of the secondary electrons. 12. The method as described in Claim 1, further characterized in that the detection means include means for detecting at least one of an energy and rotation of the secondary electrons. described in Claim 1, further characterized in that the detection means includes an electrically conductive material configured to detect * the deviation of the electron beam 14. The apparatus as described in the Rei Indication 1, further characterized in that the means of cieter.cie'an include / "*" electrically conductive material configured to detect secondary electrons 15. A method of (urt system appeal that includes a member having a magnetic material, and means for generating an electron beam, the beam electrons having a common magnetic polarization in one of a first direction and a second direction, the electron beam being steerable to one of a plurality of member ions, said method comprising the steps of : re ibir * a signal to tell; directing the electron beam to a portion of the member corresponding to the direction signal and controlling the wavelength of the electron beam of the beam so that the portion of the member assumes a magnetic polarization corresponding to the magnetic polarization of cells of the beam. 16. A method of operating a system that includes a member having a magnetic material, and means for generating an electron beam, the beam electrons having a common magnetic polarization in one of a first direction and a second direction, being the electron beam directed to one of a plurality of portions of the member, r omprenrl l ncl? The method is the steps of receiving a directed signal; directing the electron beam at one per ion of the member corresponding to the direction signal and controlling * the canard length of the tones of the beam so that the member portion assumes a magnetic pollination corresponding to the "" *} ] magnetic arc of the electron beam; and subsequently, detecting the magnetic polarization of a portion of the member corresponding to the direction signal, directing the electron beam to the portion. 17. A storage method of data points to a direction of polarity in a magnetic material, and I understood the method of the steps of producing a rotating polarized electron that has a magnetic field of the electron having the magnetic field of the electron in a direction polarization corresponding to one of a first and second data values, the electron having an unequal electron wavelength characteristic that causes the magnetic moment of the magnetic material; and directing the rotating polarized electron, through (Je an environment that is not electrically conductive, to a portion of the magnetic material) to impart the polarization direction of the magnetic field of the electron to the portion. EXCERPT OF THE INVENTION A data storage apparatus that includes a substrate, an overlay layer on the substrate, and a generator source of rotating pedeled electrons. or of atomic layers of a magnetic material which produces the storage layer at a magnetic anisotropy perpendicular to the surface of the data storage layer.In the data storage layer a field is created - magnetic data. The magnetic field of the cough is pealed either in the first address dinner corresponding to a first value * of data or in a second direction corresponding to a second value in data. The data is stored in the storage layer of d tos producing a rotationally polarized electron having a magnetic field of the electron with a polarization direction corresponding to the first and second data lines, the electron having a "characteristic". "in length (Je wave of uneven electrons in "The data storage layer which causes the magnetic moment of the material, and directing the rotating polarized electron to the magnetic field of data to impart the polarization of the magnetic field of the electron to the magnetic data field. The scart data read from the data storage layer directing the rotating polarized electron at a second wavelength in the magnetic field of data and detecting a deviation and attraction of the rotating polarized electron by the data mag- netic field, respectively the data is read from the data storage layer cii r *? The electron is then rotated to polarize it in the magnetic field of data so that the magnetic medium preads a secondary electron and the ego detects the characteristics of the electron (secondary.