[go: up one dir, main page]

MX2017002981A - Pixel de resolucion variable. - Google Patents

Pixel de resolucion variable.

Info

Publication number
MX2017002981A
MX2017002981A MX2017002981A MX2017002981A MX2017002981A MX 2017002981 A MX2017002981 A MX 2017002981A MX 2017002981 A MX2017002981 A MX 2017002981A MX 2017002981 A MX2017002981 A MX 2017002981A MX 2017002981 A MX2017002981 A MX 2017002981A
Authority
MX
Mexico
Prior art keywords
region
storage
photosensitive
resolution pixel
variable resolution
Prior art date
Application number
MX2017002981A
Other languages
English (en)
Other versions
MX370926B (es
Inventor
Cohen David
TADMOR Erez
Yahav Giora
Original Assignee
Microsoft Technology Licensing Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Technology Licensing Llc filed Critical Microsoft Technology Licensing Llc
Publication of MX2017002981A publication Critical patent/MX2017002981A/es
Publication of MX370926B publication Critical patent/MX370926B/es

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
    • G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
    • G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
    • G01S3/781—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

Un fotosensor con una diversidad de pixeles fotosensibles en el que cada pixel comprende una región fotosensible y una variedad de regiones de almacenamiento para acumular foto-carga generada en la región fotosensible, una compuerta de transferencia para cada región de almacenamiento que es electrizable, de manera selectiva, para transferir la foto-carga desde la región fotosensible a la región de almacenamiento, y una matriz de microlentes, que para cada región de almacenamiento, dirige una porción diferente de luz incidental sobre el pixel a una región de la región fotosensible más próxima a la región de almacenamiento que a otras regiones de almacenamiento.
MX2017002981A 2014-09-08 2015-09-08 Pixel de resolucion variable. MX370926B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/479,381 US9826214B2 (en) 2014-09-08 2014-09-08 Variable resolution pixel
PCT/US2015/048775 WO2016040219A1 (en) 2014-09-08 2015-09-08 Variable resolution pixel

Publications (2)

Publication Number Publication Date
MX2017002981A true MX2017002981A (es) 2017-06-19
MX370926B MX370926B (es) 2020-01-03

Family

ID=54147328

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017002981A MX370926B (es) 2014-09-08 2015-09-08 Pixel de resolucion variable.

Country Status (12)

Country Link
US (1) US9826214B2 (es)
EP (1) EP3192100B1 (es)
JP (1) JP6661617B2 (es)
KR (1) KR102451868B1 (es)
CN (1) CN106688099B (es)
AU (1) AU2015315416B2 (es)
BR (1) BR112017002841B1 (es)
CA (1) CA2959702C (es)
ES (1) ES2687378T3 (es)
MX (1) MX370926B (es)
RU (1) RU2699313C2 (es)
WO (1) WO2016040219A1 (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8547428B1 (en) * 2006-11-02 2013-10-01 SeeScan, Inc. Pipe mapping system
WO2014207788A1 (ja) * 2013-06-27 2014-12-31 パナソニックＩｐマネジメント株式会社 固体撮像素子及び測距撮像装置
US10291867B2 (en) * 2015-07-08 2019-05-14 Sony Semiconductor Solutions Corporation Solid-state imaging element and driving method and electronic equipment
KR102645722B1 (ko) 2016-10-27 2024-03-08 삼성디스플레이 주식회사 렌즈 패널 및 이를 포함하는 표시 장치
CN110520996B (zh) * 2017-04-06 2023-08-08 新唐科技日本株式会社 摄像装置、以及在其中使用的固体摄像装置
JP2018207446A (ja) * 2017-06-09 2018-12-27 オリンパス株式会社 固体撮像素子，当該固体撮像素子を用いた観察装置，固体撮像素子の駆動方法及び駆動用プログラム
CN109804426B (zh) * 2017-08-16 2021-04-27 深圳市汇顶科技股份有限公司 图像传感电路及图像深度传感系统
KR102700625B1 (ko) 2017-12-13 2024-08-28 매직 립, 인코포레이티드 컴퓨터 비전 애플리케이션들을 위한 글로벌 셔터 픽셀 회로 및 방법
CN108259744B (zh) * 2018-01-24 2020-06-23 北京图森智途科技有限公司 图像采集控制方法及其装置、图像采集系统和tof相机
US10598936B1 (en) * 2018-04-23 2020-03-24 Facebook Technologies, Llc Multi-mode active pixel sensor
JP7115390B2 (ja) * 2019-03-28 2022-08-09 株式会社デンソー 測距装置
EP4004587A4 (en) * 2019-07-31 2023-08-16 Opsys Tech Ltd. High-resolution solid-state lidar transmitter
CN110336938B (zh) * 2019-08-12 2021-02-26 浙江大华技术股份有限公司 光敏组件、图像采集装置、镜头驱动方法、存储介质
CN112825259A (zh) * 2019-11-20 2021-05-21 三星电子株式会社 非易失性存储器及其操作方法
US11463634B2 (en) * 2020-04-07 2022-10-04 Caeleste Cvba Charge domain binning in a MOS pixel
FR3110706B1 (fr) * 2020-05-20 2022-07-08 Commissariat Energie Atomique Dispositif de détection amélioré et système lidar associé
KR102650664B1 (ko) * 2022-09-02 2024-03-25 삼성전자주식회사 색분리 렌즈 어레이를 적용한 영상 획득 장치 및 방법

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949483A (en) * 1994-01-28 1999-09-07 California Institute Of Technology Active pixel sensor array with multiresolution readout
US5867215A (en) 1995-04-11 1999-02-02 Eastman Kodak Company Image sensor having multiple storage wells per pixel
WO1999040478A1 (en) * 1998-02-08 1999-08-12 3Dv Systems Ltd. Large aperture optical image shutter
WO2000019705A1 (en) 1998-09-28 2000-04-06 3Dv Systems, Ltd. Distance measurement with a camera
JP2003218332A (ja) 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
US7554587B2 (en) * 2003-03-11 2009-06-30 Fujifilm Corporation Color solid-state image pickup device
US20050157194A1 (en) 2004-01-06 2005-07-21 Altice Peter P.Jr. Imager device with dual storage nodes
US7244918B2 (en) 2005-08-30 2007-07-17 Micron Technology, Inc. Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7283609B2 (en) 2005-11-10 2007-10-16 General Electric Company CT detector photodiode having multiple charge storage devices
US7705869B2 (en) * 2007-05-14 2010-04-27 Seiko Epson Corporation Light shielding member, a line head and an image forming apparatus using the line head
JP4909924B2 (ja) * 2007-05-23 2012-04-04 パナソニック株式会社 固体撮像装置及びカメラ
JP2009047475A (ja) * 2007-08-15 2009-03-05 Hamamatsu Photonics Kk 固体撮像素子
US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
WO2009078002A1 (en) * 2007-12-19 2009-06-25 Microsoft International Holdings B.V. 3d camera and methods of gating thereof
KR20090118795A (ko) * 2008-05-13 2009-11-18 삼성전자주식회사 이중 트랜스퍼 게이트를 구비한 거리측정 센서 및 그를구비한 입체 컬러 이미지 센서
JP5333869B2 (ja) * 2008-06-04 2013-11-06 本田技研工業株式会社 撮像装置
US8264581B2 (en) 2008-07-17 2012-09-11 Microsoft International Holdings B.V. CMOS photogate 3D camera system having improved charge sensing cell and pixel geometry
KR20100054540A (ko) * 2008-11-14 2010-05-25 삼성전자주식회사 픽셀 회로, 광전 변환장치, 및 이를 포함하는 이미지 센싱 시스템
KR101543664B1 (ko) * 2008-12-08 2015-08-12 삼성전자주식회사 픽셀 어레이 및 이를 포함하는 입체 영상 센서
US8218068B2 (en) * 2009-04-01 2012-07-10 Omnivision Technologies, Inc. Exposing pixel groups in producing digital images
KR101648353B1 (ko) * 2009-09-25 2016-08-17 삼성전자 주식회사 거리 센서를 포함하는 이미지 센서
EP2521926B1 (en) 2010-01-06 2020-07-29 Heptagon Micro Optics Pte. Ltd. Demodulation sensor with separate pixel and storage arrays
GB2477083A (en) 2010-01-13 2011-07-27 Cmosis Nv Pixel structure with multiple transfer gates to improve dynamic range
US20120154535A1 (en) * 2010-12-15 2012-06-21 Microsoft Corporation Capturing gated and ungated light in the same frame on the same photosurface
JP2012129425A (ja) * 2010-12-16 2012-07-05 Canon Inc マトリクス基板、検出装置、検出システム、及び、検出装置の駆動方法
US8785831B2 (en) * 2011-01-05 2014-07-22 Luxima Technology LLC Image sensors and methods with high speed global shutter pixels
US8952310B2 (en) * 2011-02-04 2015-02-10 Aptina Imaging Corporation Plasmonic light sensors
KR101802243B1 (ko) * 2011-05-06 2017-11-29 삼성전자주식회사 비행 시간 방식의 거리 측정 센서와 이를 포함하는 반도체 장치
US8642938B2 (en) 2012-01-13 2014-02-04 Omnivision Technologies, Inc. Shared time of flight pixel
US8693731B2 (en) * 2012-01-17 2014-04-08 Leap Motion, Inc. Enhanced contrast for object detection and characterization by optical imaging
US8686342B2 (en) * 2012-04-09 2014-04-01 Omnivision Technologies, Inc. Double-sided image sensor formed on a single semiconductor wafer die
US9752928B2 (en) 2012-07-24 2017-09-05 Forza Silicon Corporation Implement multiple pixel output for photodiode size pixels
US9851245B2 (en) 2012-11-06 2017-12-26 Microsoft Technology Licensing, Llc Accumulating charge from multiple imaging exposure periods
US9147096B2 (en) * 2012-11-13 2015-09-29 Hand Held Products, Inc. Imaging apparatus having lens element

Also Published As

Publication number Publication date
BR112017002841A2 (pt) 2017-12-19
EP3192100A1 (en) 2017-07-19
US20160073088A1 (en) 2016-03-10
CN106688099B (zh) 2019-10-01
AU2015315416B2 (en) 2020-07-09
US9826214B2 (en) 2017-11-21
BR112017002841B1 (pt) 2022-09-13
KR20170053697A (ko) 2017-05-16
WO2016040219A1 (en) 2016-03-17
MX370926B (es) 2020-01-03
CN106688099A (zh) 2017-05-17
RU2699313C2 (ru) 2019-09-04
KR102451868B1 (ko) 2022-10-06
AU2015315416A1 (en) 2017-03-09
CA2959702C (en) 2023-06-27
CA2959702A1 (en) 2016-03-17
RU2017106894A (ru) 2018-09-03
JP6661617B2 (ja) 2020-03-11
ES2687378T3 (es) 2018-10-24
JP2017527222A (ja) 2017-09-14
EP3192100B1 (en) 2018-06-27
RU2017106894A3 (es) 2019-03-28

Similar Documents

Publication Publication Date Title
MX2017002981A (es) Pixel de resolucion variable.
IL292246A (en) Projector with scanning array light engine
EP3658950A4 (en) ROTARY LIDAR WITH COALIGNED IMAGER
DK3206045T3 (da) Enkelt foton lidar scanner
FR3053530B1 (fr) Dispositif optoelectronique a pixels a contraste et luminance ameliores
KR20180084738A (ko) 픽셀 구조 및 유기 발광 다이오드(oled) 디스플레이 패널
MX2017011323A (es) Metadatos de campo de luz.
EP3577205A4 (en) DETERGENT SHEET FOR MICROCAPSULES LAUNDRY
MX2017014794A (es) Dispositivo optico de microlentes de combinacion.
EP3294232A4 (en) RADIAL COMPRESSION DEVICE WITH LIMITED MATRIZE
EP3465249A4 (en) MULTIPIXEL SCANING LIDAR
EP3397287C0 (en) FORMULATIONS WITH LESS POLYSORBATE DEGRADATION
EP3625815A4 (en) ELECTRON PHOTOINJECTOR
IL273442B1 (en) Bayer matrix image sensor
FR3023976B1 (fr) Matrice de photodiodes cdhgte a faible bruit
FR3025942B1 (fr) Module lumineux multifonction avec diode oled segmentee
FR3042310B1 (fr) Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
FR3046297B1 (fr) Dispositif optoelectronique matriciel presentant une electrode superieure transparente
EP3420592A4 (en) IMPROVED PIXEL ARCHITECTURE WITH ULTRA-HIGH DYNAMIC RANGE
FR3057398B1 (fr) Photodiode a double heterojonction
EP3832339C0 (en) LIDAR WITH PHOTON RESOLUTION DETECTOR
FR3021807B1 (fr) Matrice de photodiodes mesa a ftm amelioree
EP3743948A4 (en) PHOTOVOLTAIC TEXTILE
IL281870B (en) Pumped large full well pixel
CL2015003495A1 (es) Un proceso que permite eliminar el ruido de patrón fijo en imágenes efectivas formadas por arreglos de sensores electromagnéticos de un campo de luz mediante un reenfoque digital.

Legal Events

Date Code Title Description
FG Grant or registration