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MX2016010017A - Sensor de iones basado en medida diferencial y metodo de fabricacion. - Google Patents

Sensor de iones basado en medida diferencial y metodo de fabricacion.

Info

Publication number
MX2016010017A
MX2016010017A MX2016010017A MX2016010017A MX2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A
Authority
MX
Mexico
Prior art keywords
microdeposit
sensor based
ion
differential measurement
manufacturing
Prior art date
Application number
MX2016010017A
Other languages
English (en)
Inventor
BALDI COLL Antoni
DOMÍNGUEZ HORNA Carlos
Jiménez Jorquera Cecilia
FERNÁNDEZ SÁNCHEZ César
LLOBERA ADAN Andreu
Merlos Domingo Ángel
CADARSO BUSTO Alfredo
Burdallo Bautista Isabel
Vera Gras Ferrán
Original Assignee
Consejo Superior De Investig Científicas (Csic)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior De Investig Científicas (Csic) filed Critical Consejo Superior De Investig Científicas (Csic)
Publication of MX2016010017A publication Critical patent/MX2016010017A/es

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10P54/00—
    • H10W74/131—
    • H10W72/01515—
    • H10W72/075—
    • H10W72/932—

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

La presente invención se refiere a un sensor de iones basado en medida diferencial que comprende un par ISFET-REFET en que el REFET viene definido por una estructura compuesta de un ISFET cubierto por un microdepósito donde está contenida una solución interna de referencia. El sensor comprende un primer y un segundo transistor de efecto de campo selectivo a iones, un electrodo, un sustrato sobre cuya superficie se integran los dos transistores, unas pistas de conexión y el electrodo y una estructura adherida sobre el primer transistor de efecto de campo selectivo a iones que crea un microdepósito sobre la puerta de dicho primer transistor, teniendo el microdepósito un microcanal que conecta el microdepósito con el exterior y estando el microdepósito lleno de la solución de referencia.
MX2016010017A 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y metodo de fabricacion. MX2016010017A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (1)

Publication Number Publication Date
MX2016010017A true MX2016010017A (es) 2016-10-07

Family

ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016010017A MX2016010017A (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y metodo de fabricacion.

Country Status (9)

Country Link
US (3) US10067085B2 (es)
EP (1) EP3106865B1 (es)
JP (1) JP2017505443A (es)
KR (1) KR20160119096A (es)
CN (1) CN106104265A (es)
CA (1) CA2938155A1 (es)
ES (2) ES2542927R1 (es)
MX (1) MX2016010017A (es)
WO (1) WO2015121516A1 (es)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2542927R1 (es) 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) * 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
WO2018210803A1 (en) * 2017-05-15 2018-11-22 Analog Devices Global Unlimited Company Integrated ion sensing apparatus and methods
WO2019093907A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
US9733210B2 (en) * 2014-12-31 2017-08-15 International Business Machines Corporation Nanofluid sensor with real-time spatial sensing

Also Published As

Publication number Publication date
JP2017505443A (ja) 2017-02-16
US20190017958A1 (en) 2019-01-17
US20170010237A1 (en) 2017-01-12
ES2818111T3 (es) 2021-04-09
US10067085B2 (en) 2018-09-04
US11029278B2 (en) 2021-06-08
WO2015121516A1 (es) 2015-08-20
CA2938155A1 (en) 2015-08-20
US10436743B2 (en) 2019-10-08
US20200025710A1 (en) 2020-01-23
EP3106865B1 (en) 2020-06-10
ES2542927R1 (es) 2015-09-09
ES2542927A2 (es) 2015-08-12
KR20160119096A (ko) 2016-10-12
CN106104265A (zh) 2016-11-09
EP3106865A1 (en) 2016-12-21

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