MX2015011285A - Construccion de pedestal con bajo coeficiente de expansion termica maximo. - Google Patents
Construccion de pedestal con bajo coeficiente de expansion termica maximo.Info
- Publication number
- MX2015011285A MX2015011285A MX2015011285A MX2015011285A MX2015011285A MX 2015011285 A MX2015011285 A MX 2015011285A MX 2015011285 A MX2015011285 A MX 2015011285A MX 2015011285 A MX2015011285 A MX 2015011285A MX 2015011285 A MX2015011285 A MX 2015011285A
- Authority
- MX
- Mexico
- Prior art keywords
- thermal expansion
- heating layer
- low coefficient
- application substrate
- substrate
- Prior art date
Links
Classifications
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- H10P72/70—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H10P72/0432—
-
- H10P72/72—
-
- H10P72/7612—
-
- H10P72/7624—
-
- H10P72/7626—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
- Y10T29/53178—Chip component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Abstract
Un ensamble de soporte para su uso en el procesamiento de semiconductores que incluye un sustrato de aplicación, una capa calentadora dispuesta directamente sobre el sustrato de aplicación, una capa de aislamiento dispuesta sobre la capa calentadora, y un segundo sustrato dispuesto sobre la capa de aislamiento. La capa calentadora está dispuesta directamente sobre el sustrato de aplicación por un proceso de laminado de tal forma que la capa calentadora está en contacto directo con el sustrato de aplicación. El sustrato de aplicación define un material que tiene un coeficiente de expansión térmico relativamente bajo que se iguala con un coeficiente de expansión térmico de la capa calentadora.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361770910P | 2013-02-28 | 2013-02-28 | |
| US13/836,373 US9673077B2 (en) | 2012-07-03 | 2013-03-15 | Pedestal construction with low coefficient of thermal expansion top |
| PCT/US2014/019544 WO2014134507A2 (en) | 2013-02-28 | 2014-02-28 | Pedestal construction with low coefficient of thermal expansion top |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MX2015011285A true MX2015011285A (es) | 2016-02-03 |
| MX350960B MX350960B (es) | 2017-09-27 |
Family
ID=50288329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2015011285A MX350960B (es) | 2013-02-28 | 2014-02-28 | Construcción de pedestal con bajo coeficiente de expansión termica máximo. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9673077B2 (es) |
| EP (1) | EP2962524B1 (es) |
| JP (1) | JP6322656B2 (es) |
| KR (1) | KR102213060B1 (es) |
| CN (1) | CN105009686B (es) |
| CA (1) | CA2902220C (es) |
| MX (1) | MX350960B (es) |
| WO (1) | WO2014134507A2 (es) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170116955A1 (en) * | 2014-06-12 | 2017-04-27 | Thomson Licensing | Method of mapping source colors of a source content |
| JP6442296B2 (ja) * | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| WO2016137946A1 (en) * | 2015-02-23 | 2016-09-01 | Momentive Performance Materials Inc. | Electrical connection with protection from harsh environments |
| US10453731B2 (en) * | 2016-10-21 | 2019-10-22 | Raytheon Company | Direct bond method providing thermal expansion matched devices |
| JP6704836B2 (ja) * | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
| JP6704834B2 (ja) * | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
| WO2019104021A1 (en) * | 2017-11-21 | 2019-05-31 | Watlow Electric Manufacturing Company | Ceramic pedestal having atomic protective layer |
| US11515130B2 (en) * | 2018-03-05 | 2022-11-29 | Applied Materials, Inc. | Fast response pedestal assembly for selective preclean |
| JP7037640B2 (ja) * | 2018-03-28 | 2022-03-16 | 京セラ株式会社 | ヒータ及びヒータシステム |
| KR102154488B1 (ko) * | 2018-07-09 | 2020-09-10 | 주식회사 테스 | 냉각모듈 및 이를 구비한 기판지지유닛 |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| USD931240S1 (en) * | 2019-07-30 | 2021-09-21 | Applied Materials, Inc. | Substrate support pedestal |
| USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
| KR102817778B1 (ko) * | 2020-04-29 | 2025-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일성 개선을 위한 히터 커버 플레이트 |
| US20230197420A1 (en) * | 2020-06-03 | 2023-06-22 | Lam Research Corporation | Monobloc pedestal for efficient heat transfer |
| US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US11699571B2 (en) | 2020-09-08 | 2023-07-11 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
| CN112192154A (zh) * | 2020-09-30 | 2021-01-08 | 靖江先锋半导体科技有限公司 | 刻蚀机用气体喷淋盘的加工工艺 |
| USD1066620S1 (en) * | 2021-02-12 | 2025-03-11 | Applied Materials, Inc. | Patterned heater pedestal with groove extensions |
| CN117467924B (zh) * | 2023-10-27 | 2025-10-21 | 无锡市福莱达石油机械有限公司 | 一种带有多元复合陶瓷涂层的硅片真空吸盘的制备方法 |
| WO2025101403A1 (en) * | 2023-11-10 | 2025-05-15 | Lam Research Corporation | Temperature-controlled wafer support pedestal with vacuum clamping features |
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-
2013
- 2013-03-15 US US13/836,373 patent/US9673077B2/en active Active
-
2014
- 2014-02-28 CA CA2902220A patent/CA2902220C/en not_active Expired - Fee Related
- 2014-02-28 EP EP14710749.4A patent/EP2962524B1/en active Active
- 2014-02-28 JP JP2015560368A patent/JP6322656B2/ja active Active
- 2014-02-28 WO PCT/US2014/019544 patent/WO2014134507A2/en not_active Ceased
- 2014-02-28 CN CN201480010458.3A patent/CN105009686B/zh active Active
- 2014-02-28 MX MX2015011285A patent/MX350960B/es active IP Right Grant
- 2014-02-28 KR KR1020157025854A patent/KR102213060B1/ko active Active
-
2017
- 2017-04-11 US US15/484,374 patent/US20170221734A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014134507A3 (en) | 2014-10-23 |
| MX350960B (es) | 2017-09-27 |
| US20170221734A1 (en) | 2017-08-03 |
| CN105009686A (zh) | 2015-10-28 |
| CA2902220A1 (en) | 2014-09-04 |
| WO2014134507A2 (en) | 2014-09-04 |
| CN105009686B (zh) | 2020-05-05 |
| JP6322656B2 (ja) | 2018-05-09 |
| US9673077B2 (en) | 2017-06-06 |
| KR20150122699A (ko) | 2015-11-02 |
| EP2962524B1 (en) | 2019-12-25 |
| KR102213060B1 (ko) | 2021-02-05 |
| JP2016508676A (ja) | 2016-03-22 |
| CA2902220C (en) | 2018-11-06 |
| EP2962524A2 (en) | 2016-01-06 |
| US20140011153A1 (en) | 2014-01-09 |
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