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MX2013013032A - Circuito de conmutacion y modulo de semiconductor. - Google Patents

Circuito de conmutacion y modulo de semiconductor.

Info

Publication number
MX2013013032A
MX2013013032A MX2013013032A MX2013013032A MX2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A MX 2013013032 A MX2013013032 A MX 2013013032A
Authority
MX
Mexico
Prior art keywords
electrode
switching element
switching circuit
semiconductor module
control
Prior art date
Application number
MX2013013032A
Other languages
English (en)
Inventor
Yusuke Zushi
Yoshinori Murakami
Satoshi Tanimoto
Shinji Sato
Kohei Matsui
Original Assignee
Nissan Motor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011107171A external-priority patent/JP5619673B2/ja
Priority claimed from JP2011200308A external-priority patent/JP5843535B2/ja
Application filed by Nissan Motor filed Critical Nissan Motor
Publication of MX2013013032A publication Critical patent/MX2013013032A/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H10W72/5475—
    • H10W90/753—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un circuito de conmutación comprende: un primer elemento de conmutación (Q1); una resistencia (11) insertada entre un electrodo de control (G) para el mismo y un circuito de control (13), que controla por conmutación el mismo; un primer condensador (15) conectado entre el electrodo de control (G) para el primer elemento de conmutación (Q1) y un electrodo de lado de bajo potencial (S) para el primer elemento de conmutación (Q1); y un segundo elemento de conmutación (14). Un electrodo de lado de alto potencial para el segundo elemento de conmutación (14) se conecta al electrodo de control (G) para el primer elemento de conmutación (Q1), el electrodo de lado de bajo potencial para el segundo elemento de conmutación (14) se conecta al primer electrodo para el primer condensador (15), el otro electrodo para el primer condensador (15) se conecta al electrodo de lado de bajo potencial (S) para el primer elemento de conmutación (Q1), y un electrodo de control para el segundo elemento de conmutación (14) se conecta a un electrodo en el lado que.
MX2013013032A 2011-05-12 2012-05-11 Circuito de conmutacion y modulo de semiconductor. MX2013013032A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011107171A JP5619673B2 (ja) 2011-05-12 2011-05-12 スイッチング回路及び半導体モジュール
JP2011200308A JP5843535B2 (ja) 2011-09-14 2011-09-14 半導体モジュール
PCT/JP2012/062129 WO2012153836A1 (ja) 2011-05-12 2012-05-11 スイッチング回路及び半導体モジュール

Publications (1)

Publication Number Publication Date
MX2013013032A true MX2013013032A (es) 2014-04-16

Family

ID=47139310

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013013032A MX2013013032A (es) 2011-05-12 2012-05-11 Circuito de conmutacion y modulo de semiconductor.

Country Status (9)

Country Link
US (1) US8916882B2 (es)
EP (1) EP2712085B1 (es)
KR (1) KR101571952B1 (es)
CN (1) CN103620962B (es)
BR (1) BR112013028761A2 (es)
MX (1) MX2013013032A (es)
MY (1) MY157390A (es)
RU (1) RU2557456C2 (es)
WO (1) WO2012153836A1 (es)

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* Cited by examiner, † Cited by third party
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JP6009932B2 (ja) * 2012-12-21 2016-10-19 株式会社東芝 ゲート駆動回路
WO2014115553A1 (ja) * 2013-01-24 2014-07-31 パナソニック株式会社 ハーフブリッジ回路及びハーフブリッジ回路から構成されるフルブリッジ回路及び３相インバータ回路
DE102014210342A1 (de) * 2014-06-02 2015-12-03 Robert Bosch Gmbh Verfahren zum Betreiben einer Treiberschaltung zum Ansteuern einer Feldeffekttransistorstruktur
CN104779815B (zh) * 2015-04-02 2017-08-01 西安交通大学 一种可替换IGBT模块的SiC MOSFET智能功率集成模块
CN105161491B (zh) * 2015-09-22 2019-03-15 苏州东微半导体有限公司 一种集成栅极驱动功率器件及其制备方法
JP6561794B2 (ja) * 2015-11-20 2019-08-21 トヨタ自動車株式会社 スイッチング回路
US10243476B2 (en) * 2015-12-24 2019-03-26 Kabushiki Kaisha Yaskawa Denki Power conversion device and power conversion method
JP6613899B2 (ja) * 2016-01-05 2019-12-04 富士電機株式会社 半導体素子の駆動装置
US10141923B2 (en) * 2016-08-25 2018-11-27 Toyota Motor Engineering & Manufacturing North America, Inc. System and method for eliminating gate voltage oscillation in paralleled power semiconductor switches
JP6699487B2 (ja) 2016-09-23 2020-05-27 アイシン・エィ・ダブリュ株式会社 スイッチング素子駆動回路
WO2018186353A1 (ja) 2017-04-05 2018-10-11 ローム株式会社 パワーモジュール
JP6443518B1 (ja) * 2017-09-29 2018-12-26 サンケン電気株式会社 ゲート駆動回路
JP2019140722A (ja) * 2018-02-06 2019-08-22 トヨタ自動車株式会社 電力変換装置
JP6919592B2 (ja) * 2018-02-09 2021-08-18 トヨタ自動車株式会社 スイッチング回路
CN111758158B (zh) * 2018-02-23 2024-01-02 罗姆股份有限公司 半导体装置及功率模块
US10596807B2 (en) * 2018-03-19 2020-03-24 Fuji Xerox Co., Ltd. Capacitive load driving circuit and image forming apparatus
US11863062B2 (en) * 2018-04-27 2024-01-02 Raytheon Company Capacitor discharge circuit
US10749019B2 (en) * 2018-07-03 2020-08-18 Semiconductor Components Industries, Llc Circuit and electronic device including an enhancement-mode transistor
KR102159110B1 (ko) * 2019-01-30 2020-09-23 만도헬라일렉트로닉스(주) 차량용 모터 구동장치
US12094932B2 (en) * 2019-02-21 2024-09-17 North Carolina State University Power devices having tunable saturation current clamps therein that support improved short-circuit capability
CN113544858B (zh) * 2019-03-18 2024-08-16 三菱电机株式会社 碳化硅半导体装置及其制造方法、电力变换装置
JP6777193B2 (ja) * 2019-05-27 2020-10-28 日産自動車株式会社 スイッチング回路装置
CN113054829B (zh) * 2019-12-26 2022-06-21 湖南国芯半导体科技有限公司 一种碳化硅mosfet驱动电路
CN112615605B (zh) * 2020-12-04 2024-10-29 珠海格力电器股份有限公司 自定义igbt端口阻抗的智能功率模块

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US5117123A (en) * 1990-04-30 1992-05-26 Thomson Consumer Electronics, Inc. Diode switch providing temperature compensated d.c. bias for cascaded amplifier
JP2868170B2 (ja) * 1992-07-28 1999-03-10 東洋電機製造株式会社 スイッチング素子の駆動回路
JP3568823B2 (ja) * 1999-05-24 2004-09-22 東芝三菱電機産業システム株式会社 絶縁ゲート型半導体素子のゲート制御回路
JP4722341B2 (ja) * 2001-08-09 2011-07-13 東芝三菱電機産業システム株式会社 ゲートノイズ抑制回路
JP5011621B2 (ja) * 2001-08-14 2012-08-29 サンケン電気株式会社 自励式ｄｃ−ｄｃコンバータ
JP2003161355A (ja) * 2001-11-26 2003-06-06 Honda Motor Co Ltd トロイダル無段変速機
JP2003324966A (ja) * 2002-04-26 2003-11-14 Denso Corp インバータ駆動回路
JP2004014547A (ja) * 2002-06-03 2004-01-15 Toshiba Corp 半導体装置及び容量調節回路
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
JP5492518B2 (ja) * 2009-10-02 2014-05-14 株式会社日立製作所 半導体駆動回路、及びそれを用いた半導体装置

Also Published As

Publication number Publication date
CN103620962A (zh) 2014-03-05
KR101571952B1 (ko) 2015-11-25
EP2712085A1 (en) 2014-03-26
EP2712085B1 (en) 2016-02-03
CN103620962B (zh) 2016-06-22
US20140091324A1 (en) 2014-04-03
RU2013155087A (ru) 2015-06-20
US8916882B2 (en) 2014-12-23
RU2557456C2 (ru) 2015-07-20
KR20140011399A (ko) 2014-01-28
EP2712085A4 (en) 2015-02-11
BR112013028761A2 (pt) 2017-01-24
MY157390A (en) 2016-06-15
WO2012153836A1 (ja) 2012-11-15

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