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MX2013009796A - Horno para obleas con chorros de gas de flujo variable. - Google Patents

Horno para obleas con chorros de gas de flujo variable.

Info

Publication number
MX2013009796A
MX2013009796A MX2013009796A MX2013009796A MX2013009796A MX 2013009796 A MX2013009796 A MX 2013009796A MX 2013009796 A MX2013009796 A MX 2013009796A MX 2013009796 A MX2013009796 A MX 2013009796A MX 2013009796 A MX2013009796 A MX 2013009796A
Authority
MX
Mexico
Prior art keywords
wafer
partially formed
formed sheet
sheet wafer
variable flow
Prior art date
Application number
MX2013009796A
Other languages
English (en)
Inventor
Weidong Huang
Leo Van Glabbeek
Stephen Yamartino
Lianghong Liu
David Hitchcock
Original Assignee
Max Era Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Era Inc filed Critical Max Era Inc
Publication of MX2013009796A publication Critical patent/MX2013009796A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Fibers (AREA)

Abstract

Un método para formar una placa de lámina que: 1) pasa por lo menos dos filamentos a través de un material fundido para producir una placa de lámina parcialmente formada, 2) dirige un fluido de enfriamiento en un índice de flujo hacia la placa de lámina parcialmente formada para enfriar de manera convectiva una porción dada de la placa de lámina parcialmente formada, y 3) monitorea el grosor de la porción dada de la placa de lámina parcialmente formada; para asegurar el grosor adecuado de la placa, el método controla el índice de flujo del fluido de enfriamiento como una función del grosor de la porción dada de la placa de lámina parcialmente formada.
MX2013009796A 2011-02-23 2012-02-23 Horno para obleas con chorros de gas de flujo variable. MX2013009796A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/032,742 US20120211917A1 (en) 2011-02-23 2011-02-23 Wafer Furnace with Variable Flow Gas Jets
PCT/US2012/026352 WO2012116202A2 (en) 2011-02-23 2012-02-23 Wafer furnace with variable flow gas jets

Publications (1)

Publication Number Publication Date
MX2013009796A true MX2013009796A (es) 2014-03-21

Family

ID=46652097

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013009796A MX2013009796A (es) 2011-02-23 2012-02-23 Horno para obleas con chorros de gas de flujo variable.

Country Status (6)

Country Link
US (1) US20120211917A1 (es)
CA (1) CA2828228A1 (es)
MX (1) MX2013009796A (es)
SG (1) SG192927A1 (es)
TW (1) TW201303094A (es)
WO (1) WO2012116202A2 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202136596A (zh) * 2020-02-19 2021-10-01 美商先鋒設備科技公司 利用表面冷卻和熔體加熱之組合來控制在熔體表面形成之結晶片材的厚度和寬度
EP4107315A4 (en) 2020-02-19 2024-02-28 Leading Edge Equipment Technologies, Inc. ACTIVE EDGE CONTROL OF A CRYSTALLINE DISC PRODUCED ON THE SURFACE OF A MELT

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5261180A (en) * 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US5942037A (en) * 1996-12-23 1999-08-24 Fsi International, Inc. Rotatable and translatable spray nozzle
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling
US20090095422A1 (en) * 2007-09-06 2009-04-16 Hitachi Kokusai Electric Inc. Semiconductor manufacturing apparatus and substrate processing method

Also Published As

Publication number Publication date
CA2828228A1 (en) 2012-08-30
WO2012116202A2 (en) 2012-08-30
TW201303094A (zh) 2013-01-16
SG192927A1 (en) 2013-09-30
US20120211917A1 (en) 2012-08-23
WO2012116202A3 (en) 2014-04-17

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Legal Events

Date Code Title Description
FA Abandonment or withdrawal