[go: up one dir, main page]

MX2013006660A - Amplificador de ruido bajo. - Google Patents

Amplificador de ruido bajo.

Info

Publication number
MX2013006660A
MX2013006660A MX2013006660A MX2013006660A MX2013006660A MX 2013006660 A MX2013006660 A MX 2013006660A MX 2013006660 A MX2013006660 A MX 2013006660A MX 2013006660 A MX2013006660 A MX 2013006660A MX 2013006660 A MX2013006660 A MX 2013006660A
Authority
MX
Mexico
Prior art keywords
low noise
noise amplifier
self
decent
amplifying transistor
Prior art date
Application number
MX2013006660A
Other languages
English (en)
Inventor
Fenghao Mu
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of MX2013006660A publication Critical patent/MX2013006660A/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/347—Negative-feedback-circuit arrangements with or without positive feedback using transformers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/06—A balun, i.e. balanced to or from unbalanced converter, being present at the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/09—A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45386—Indexing scheme relating to differential amplifiers the AAC comprising one or more coils in the source circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45516—Indexing scheme relating to differential amplifiers the FBC comprising a coil and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45522—Indexing scheme relating to differential amplifiers the FBC comprising one or more potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45544—Indexing scheme relating to differential amplifiers the IC comprising one or more capacitors, e.g. coupling capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45591—Indexing scheme relating to differential amplifiers the IC comprising one or more potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45621—Indexing scheme relating to differential amplifiers the IC comprising a transformer for phase splitting the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45662—Indexing scheme relating to differential amplifiers the LC comprising inductive coupled loading elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Un amplificador de ruido bajo que comprende al menos un transistor (Ts1; Ts2) amplificador configurada en una fuente común para recibir una señal (RFin) de entrada a una terminal de compuerta y proporcionar una señal amplificada a una terminal drenador y al menos una trayectoria dispuesta para acoplar una parte de la señal amplificada de vuelta a la terminal de compuerta y que comprende una impedancia de retroalimentación. El amplificador de ruido bajo comprende un transformador elevador de auto-acoplamiento que tiene al menos un devanado (Lp) primario conectados a una tensión (Vdd) de alimentación y la terminal de compuerta de al menos un transistor de amplificación y al menos un auto-acoplado devanado (Lf1; Lf2) inductor secundario dispuesto en el camino de realimentación. El amplificador de ruido bajo proporciona una mejor supresión de la interferencia fuera de banda y al mismo tiempo tiene un ancho de banda que coincide con la entrada más amplia, ganancia de conversión buena y la figura de ruido buena sin incrementar el consumo de energía.
MX2013006660A 2010-12-16 2011-12-09 Amplificador de ruido bajo. MX2013006660A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10195354.5A EP2466746B1 (en) 2010-12-16 2010-12-16 Low noise amplifier
US201061425901P 2010-12-22 2010-12-22
PCT/EP2011/072333 WO2012080126A1 (en) 2010-12-16 2011-12-09 Low noise amplifier

Publications (1)

Publication Number Publication Date
MX2013006660A true MX2013006660A (es) 2013-07-29

Family

ID=43558147

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013006660A MX2013006660A (es) 2010-12-16 2011-12-09 Amplificador de ruido bajo.

Country Status (4)

Country Link
US (1) US8965322B2 (es)
EP (1) EP2466746B1 (es)
MX (1) MX2013006660A (es)
WO (1) WO2012080126A1 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103259553A (zh) * 2012-02-17 2013-08-21 Imec公司 一种用于无线电设备的前端系统
JP6196299B2 (ja) * 2012-06-12 2017-09-13 ザ リージェンツ オブ ユニバーシティー オブ ミシガン 狭域通信用の超低電力無線機
US8912845B2 (en) 2013-01-07 2014-12-16 Analog Devices, Inc. Multiple winding transformer coupled amplifier
US20140235187A1 (en) * 2013-02-15 2014-08-21 Vrije Universiteit Brussel Front-End System for a Radio Transmitter
EP2770634B1 (en) 2013-02-25 2018-09-19 Telefonaktiebolaget LM Ericsson (publ) Distributed power amplifier circuit
US9124228B2 (en) * 2013-04-04 2015-09-01 Qualcomm Incorporated Amplifiers with boosted or deboosted source degeneration inductance
EP2913922A1 (en) * 2014-02-28 2015-09-02 Telefonaktiebolaget L M Ericsson (publ) A low noise amplifier circuit
JP6386312B2 (ja) * 2014-09-09 2018-09-05 ルネサスエレクトロニクス株式会社 半導体装置
US9628031B2 (en) 2014-10-29 2017-04-18 Qualcomm Incorporated Transformer feedback amplifier
US9712195B2 (en) 2015-05-13 2017-07-18 Qualcomm Incorporated Radio frequency low noise amplifier with on-chip matching and built-in tunable filter
US9917555B2 (en) * 2015-12-17 2018-03-13 Twaiwan Semiconductor Manufactoring Company, Ltd. Amplifier and method of operating same
GB201614239D0 (en) * 2016-08-19 2016-10-05 Novelda As Amplifier
JP6584718B2 (ja) * 2017-03-23 2019-10-02 三菱電機株式会社 電流増幅器
US10411745B1 (en) * 2018-04-05 2019-09-10 Speedlink Technology Inc. Broadband image-reject receiver for multi-band millimeter-wave 5G communication
US10855317B2 (en) 2018-04-05 2020-12-01 Swiftlink Technologies Inc. Broadband receiver for multi-band millimeter-wave wireless communication
US11202264B2 (en) * 2018-07-27 2021-12-14 Qualcomm Incorporated Filterless multiple input multiple output (MIMO) reception
TWI670930B (zh) * 2018-12-18 2019-09-01 財團法人工業技術研究院 無線接收裝置
KR102685413B1 (ko) 2019-09-11 2024-07-15 삼성전자주식회사 수신기 회로 및 수신시스템
CN110708021B (zh) * 2019-09-30 2023-04-07 西安电子科技大学 高线性度差分双反馈低噪声放大器
CN111030614B (zh) * 2019-12-11 2023-10-27 电子科技大学 一种跨导增强型毫米波低噪声放大器
CN113572433B (zh) * 2020-10-30 2023-10-13 锐石创芯(深圳)科技股份有限公司 射频差分放大电路和射频模组
CN113285674B (zh) * 2021-05-21 2025-09-26 珠海微度芯创科技有限责任公司 一种新型宽带太赫兹cmos低噪声放大器
CN216390919U (zh) * 2021-11-05 2022-04-26 深圳飞骧科技股份有限公司 一种高效率射频功率放大器
US20230179162A1 (en) * 2021-12-08 2023-06-08 Globalfoundries U.S. Inc. Differential stacked power amplifier with inductive gain boosting
CN114430256A (zh) * 2022-02-08 2022-05-03 成都通量科技有限公司 提升增益的三耦合低噪声放大器、系统及其参数计算方法
CN114710138B (zh) * 2022-06-08 2022-09-20 成都嘉纳海威科技有限责任公司 一种多通道放大衰减移相串口控制多功能芯片
CN115913154B (zh) * 2023-02-08 2023-05-23 深圳飞骧科技股份有限公司 微波功率放大器和微波芯片

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3487325A (en) * 1967-08-23 1969-12-30 Bell Telephone Labor Inc Hybrid feedback amplifier
GB1271509A (en) * 1968-08-05 1972-04-19 Plessey Co Ltd Improvements in or relating to amplifier arrangements
US5650748A (en) * 1994-02-24 1997-07-22 Mcdonnell Douglas Corporation Ultra-stable gain circuit
US6026286A (en) * 1995-08-24 2000-02-15 Nortel Networks Corporation RF amplifier, RF mixer and RF receiver
US6586993B2 (en) * 2000-11-08 2003-07-01 Research In Motion Limited Impedance matching low noise amplifier having a bypass switch
WO2007063494A1 (en) 2005-12-02 2007-06-07 Nxp B.V. Low noise amplifier
TWI306690B (en) * 2006-01-27 2009-02-21 Univ Nat Chiao Tung Ultra broad-band low noise amplifier utilizing dual feedback technique
US7554397B2 (en) * 2006-05-22 2009-06-30 Theta Microelectronics, Inc. Highly linear low-noise amplifiers
US7489192B2 (en) * 2006-05-22 2009-02-10 Theta Microelectronics, Inc. Low-noise amplifiers
JP4857189B2 (ja) * 2007-05-16 2012-01-18 日本電信電話株式会社 広帯域低雑音増幅器
JP4998211B2 (ja) * 2007-10-31 2012-08-15 アイコム株式会社 低雑音増幅器及び差動増幅器
JP4803189B2 (ja) 2008-01-31 2011-10-26 アイコム株式会社 差動増幅器

Also Published As

Publication number Publication date
WO2012080126A1 (en) 2012-06-21
US20130281043A1 (en) 2013-10-24
US8965322B2 (en) 2015-02-24
EP2466746A1 (en) 2012-06-20
EP2466746B1 (en) 2013-09-18

Similar Documents

Publication Publication Date Title
MX2013006660A (es) Amplificador de ruido bajo.
Choi et al. A new power management IC architecture for envelope tracking power amplifier
WO2011145002A3 (en) Multi-band high-efficiency doherty amplifier
MX2017005869A (es) Amplificador de potencia para amplificar la señal de radiofrecuencia.
WO2010108030A3 (en) Common-gate common-source amplifier
WO2007123792A3 (en) Switching power amplifier
WO2011143504A8 (en) Area efficient concurrent matching transceiver
AU2003228615A8 (en) Rf power amplifier employing bias circuit topologies for minimization of rf amplifier memory effects
JP2010050986A5 (es)
TW200943697A (en) Compensating for non-linear capacitance effects in a power amplifier
WO2008039503A3 (en) Broadband low noise amplifier
WO2008112041A3 (en) Power supply providing ultrafast modulation of output voltage
WO2007136800A3 (en) Dc offset mitigation in a single-supply amplifier
WO2006105413A3 (en) Doherty power amplifier with phase compensation
WO2010044346A1 (ja) 電力増幅器
EP2234271A3 (en) Amplifier Circuit and Transceiver
WO2008100055A3 (en) Microphone amplifier
TW200731660A (en) Radio frequency power amplifier circuit
Yamashita et al. A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system
TW200703884A (en) Miller-compensated amplifier
TW200629718A (en) Current limit circuit for power amplifiers
GB2440485A (en) Transformer-capacitor enhancement circuitry for power amplifiers
GB2442924A (en) A method and apparatus for increasing the efficiency of low power amplifiers
TW200731657A (en) Single-ended input to differential-ended output low noise amplifier implemented with cascode and cascade topology
JP2015046795A (ja) 電力増幅装置、及び電力増幅装置の制御方法

Legal Events

Date Code Title Description
FG Grant or registration