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MX2012004515A - Sensor de imagen optimizado por los colores. - Google Patents

Sensor de imagen optimizado por los colores.

Info

Publication number
MX2012004515A
MX2012004515A MX2012004515A MX2012004515A MX2012004515A MX 2012004515 A MX2012004515 A MX 2012004515A MX 2012004515 A MX2012004515 A MX 2012004515A MX 2012004515 A MX2012004515 A MX 2012004515A MX 2012004515 A MX2012004515 A MX 2012004515A
Authority
MX
Mexico
Prior art keywords
region
image sensor
filter
gate
color
Prior art date
Application number
MX2012004515A
Other languages
English (en)
Inventor
Hiok Nam Tay
Original Assignee
Hiok Nam Tay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hiok Nam Tay filed Critical Hiok Nam Tay
Publication of MX2012004515A publication Critical patent/MX2012004515A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Se describe una matriz de pixeles (12) de un sensor de imágenes soportado por un sustrato (106) de un primer tipo conductivo que comprende: un primer píxel configurado para detectar una luz azul; y un segundo pixel, el segundo pixel comprende: un fotodetector que comprende una segunda región (102b) de un segundo tipo conductivo en el sustrato; una primera región (52y) del primer tipo conductivo estando verticalmente arriba de la segunda región y bajo una interface superior del sustrato; un primer dren (57) de un primer transistor, el primer dren colindando con la primera región; una primera compuerta del primer transistor (104b), la primera compuerta estando verticalmente arriba de la primera y segunda regiones; un primer filtro de color (114b), el primer filtro de color siendo un filtro de color rojo o un filtro de color verde o un filtro de color amarillo; y una primera guía de luz (130, 316), la primera guía de luz estando configurada para transmitir una luz desde el primer filtro de color a una segunda región vía la primera compuerta y la primera región.
MX2012004515A 2009-10-21 2010-10-21 Sensor de imagen optimizado por los colores. MX2012004515A (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US25384909P 2009-10-21 2009-10-21
US25474509P 2009-10-25 2009-10-25
US12/906,351 US8441052B2 (en) 2009-10-21 2010-10-18 Color-optimized image sensor
PCT/IB2010/054779 WO2011048571A2 (en) 2009-10-21 2010-10-21 Color-optimized image sensor

Publications (1)

Publication Number Publication Date
MX2012004515A true MX2012004515A (es) 2012-07-17

Family

ID=43878646

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012004515A MX2012004515A (es) 2009-10-21 2010-10-21 Sensor de imagen optimizado por los colores.

Country Status (11)

Country Link
US (2) US8441052B2 (es)
JP (1) JP5975219B2 (es)
CN (1) CN102576716B (es)
AU (1) AU2010309415A1 (es)
BR (1) BR112012009392A2 (es)
DE (1) DE112010004123T5 (es)
GB (1) GB2484224B (es)
MX (1) MX2012004515A (es)
SG (1) SG179550A1 (es)
TW (1) TWI548071B (es)
WO (1) WO2011048571A2 (es)

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US8441052B2 (en) 2009-10-21 2013-05-14 Hiok Nam Tay Color-optimized image sensor
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US9231137B1 (en) * 2010-06-04 2016-01-05 Hrl Laboratories, Llc Infrared photodetector with reticulated contact
US9373732B2 (en) * 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
US20130300902A1 (en) * 2012-03-29 2013-11-14 Hiok Nam Tay Color image sensor pixel array
TW201405792A (zh) * 2012-07-30 2014-02-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
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US10164156B2 (en) * 2017-03-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of image sensor structure with grid structure
TWI646678B (zh) * 2017-12-07 2019-01-01 晶相光電股份有限公司 影像感測裝置
US11404468B2 (en) * 2019-06-21 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Wavelength tunable narrow band filter
US11495635B2 (en) * 2020-10-30 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Polydimethylsiloxane antireflective layer for an image sensor

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Also Published As

Publication number Publication date
CN102576716B (zh) 2015-12-16
SG179550A1 (en) 2012-05-30
WO2011048571A2 (en) 2011-04-28
US20110089514A1 (en) 2011-04-21
DE112010004123T5 (de) 2012-11-08
JP5975219B2 (ja) 2016-08-23
JP2013508964A (ja) 2013-03-07
BR112012009392A2 (pt) 2016-06-14
WO2011048571A3 (en) 2011-06-23
TWI548071B (zh) 2016-09-01
TW201143046A (en) 2011-12-01
CN102576716A (zh) 2012-07-11
GB2484224A (en) 2012-04-04
AU2010309415A1 (en) 2012-05-31
US20130249038A1 (en) 2013-09-26
GB2484224B (en) 2013-10-30
US8441052B2 (en) 2013-05-14
US9111829B2 (en) 2015-08-18
GB201200089D0 (en) 2012-02-15

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