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MX2009003120A - Metodo para zafiro de plano c y aparato. - Google Patents

Metodo para zafiro de plano c y aparato.

Info

Publication number
MX2009003120A
MX2009003120A MX2009003120A MX2009003120A MX2009003120A MX 2009003120 A MX2009003120 A MX 2009003120A MX 2009003120 A MX2009003120 A MX 2009003120A MX 2009003120 A MX2009003120 A MX 2009003120A MX 2009003120 A MX2009003120 A MX 2009003120A
Authority
MX
Mexico
Prior art keywords
plane sapphire
production
single crystal
sapphire method
plane
Prior art date
Application number
MX2009003120A
Other languages
English (en)
Inventor
Christopher D Jones
John W Locher
Vitali Tatartchenko
Steven A Zanella
Fery Pranadi
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Publication of MX2009003120A publication Critical patent/MX2009003120A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23907—Pile or nap type surface or component
    • Y10T428/23986—With coating, impregnation, or bond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Se describe un método y aparato para la producción de zafiro de cristal simple de plano C; el método y aparato pueden usar técnicas de crecimiento de capa alimentada de borde definido para la producción de material de cristal simple que exhibe baja policristalinidad y/o baja densidad de dislocación.
MX2009003120A 2006-09-22 2007-09-21 Metodo para zafiro de plano c y aparato. MX2009003120A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82672306P 2006-09-22 2006-09-22
PCT/US2007/079149 WO2008036888A1 (en) 2006-09-22 2007-09-21 C-plane sapphire method and apparatus

Publications (1)

Publication Number Publication Date
MX2009003120A true MX2009003120A (es) 2009-04-06

Family

ID=38819679

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009003120A MX2009003120A (es) 2006-09-22 2007-09-21 Metodo para zafiro de plano c y aparato.

Country Status (12)

Country Link
US (3) US8652658B2 (es)
EP (1) EP2082081B1 (es)
JP (1) JP5702931B2 (es)
KR (5) KR101230279B1 (es)
CN (2) CN101522961B (es)
AU (1) AU2007299677B2 (es)
CA (1) CA2663382C (es)
MX (1) MX2009003120A (es)
RU (1) RU2436875C2 (es)
TW (2) TWI388700B (es)
UA (1) UA96952C2 (es)
WO (1) WO2008036888A1 (es)

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Also Published As

Publication number Publication date
US20140116323A1 (en) 2014-05-01
JP2010504274A (ja) 2010-02-12
US8652658B2 (en) 2014-02-18
JP5702931B2 (ja) 2015-04-15
CN101522961B (zh) 2013-04-10
WO2008036888A1 (en) 2008-03-27
KR20130016409A (ko) 2013-02-14
US20170226659A1 (en) 2017-08-10
CA2663382C (en) 2012-04-24
TW201200644A (en) 2012-01-01
CN101522961A (zh) 2009-09-02
KR20090055644A (ko) 2009-06-02
TWI388700B (zh) 2013-03-11
KR20110134935A (ko) 2011-12-15
RU2436875C2 (ru) 2011-12-20
RU2009114547A (ru) 2010-10-27
KR101353277B1 (ko) 2014-01-22
TWI472652B (zh) 2015-02-11
CA2663382A1 (en) 2008-03-27
UA96952C2 (ru) 2011-12-26
AU2007299677A1 (en) 2008-03-27
TW200827500A (en) 2008-07-01
CN102965729A (zh) 2013-03-13
KR101225470B1 (ko) 2013-01-24
KR101498520B1 (ko) 2015-03-04
US20080075941A1 (en) 2008-03-27
KR101298965B1 (ko) 2013-08-23
EP2082081A1 (en) 2009-07-29
KR20110093922A (ko) 2011-08-18
KR101230279B1 (ko) 2013-02-06
AU2007299677B2 (en) 2011-05-12
KR20130016410A (ko) 2013-02-14
EP2082081B1 (en) 2015-05-06

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