MX2008008816A - Semiconductor radiation detector optimized for detecting visible light - Google Patents

Abstract

A semiconductor radiation detector comprises a bulk layer of semiconductor material, and on a first surface of the bulk layer in the following order:a modified internal gate layer of semiconductor of second conductivity type, a barrier layer of semiconductor of first conductivity type and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings. The device comprises a first conductivity type first contact. Said pixel voltage is defined as a potential difference between the pixel doping and the first contact. The bulk layer is of the first conductivity type. On a second surface of the bulk layer opposite to the first surface, there is noconductive back side layer that would transport secondary charges outside the active area of the device or function as the radiation entry window.

Description

OPTIMIZED SEMICONDUCTOR RADIATION DETECTOR TO DETECT VISIBLE LIGHT FIELD OF THE INVENTION The present invention relates to semiconductor radiation detectors and particularly to a semiconductor radiation detector having a modified internal gate.

BACKGROUND OF THE INVENTION The radiation is converted to electron hole pairs in the semiconductor material. In semiconductor radiation detectors, the electron orifice pairs are separated by an electric field. The load type of the electron hole pair that is measured is called a signal load and the opposite load type is referred to as a secondary load. Patent Applications PCT / FI2004 / 000492 and PCT / FI20085 / 000359, which are incorporated by reference in the present description, describe a semiconductor radiation detector having a modified internal gate (MIG). This detector is hereinafter referred to as a MIG detector. The MIG detector is illuminated from behind and has a thick substrate completely empty and a thin conductive layer on the back of the device. This rear conductive layer has three functions: when it is suitably polarized it allows the complete drastic reduction of the dense substrate, it transports secondary charges outside the active area of the device and functions as a thin homogenous radiation input window. The charges generated on the surface can be separated from the signal loads, which provide a small dark current noise. This signal load can be read non-destructively allowing the signal load to be read on multiple occasions, which reduces the reading noise. The back illumination and the thin homogenous radiation input window allow the detection of shallow penetrating radiation similar to low energy X-rays and particles with a good energy resolution. The completely dense vacuum substrate allows the detection of radiation that penetrates deeply. The substrate material of the MIG detector is preferably highly resistant, ie almost intrinsic to the silicone and the substrate thickness is a few hundred micrometers. This MIG detector can be used to detect particles, X-rays from low to medium energies (-100 eV - -10 keV) and ultraviolet and blue light photons close to infrared radiation. Near infrared radiation is referred to herein as a radiation that can not be seen by the human eye and has a wavelength below 1.1 μm, which is the detection limit of silicone. Near infrared radiation, whose wavelength is close although below this limit has a very large depth of attenuation in the silica, up to thousands of micrometers. Due to the back illumination, due to the completely thick cast substrate and due to the thin radiation input window, the MIG detector has a high quantum efficiency from near infrared radiation to blue light. Because the coarse substrate also suffers a phenomenon called chromatic alteration, it is eliminated. The phenomenon of chromatic alteration is a problem in the detectors many times between the front and back surfaces of the detector before being absorbed, producing unwanted interference patterns. Because the moonless night sky contains at least an order of magnitude closer to the infrared photons than the visible photons and because the reflection coefficient of many materials is much higher for near infrared radiation than for visible light (for example, the reflection capacity of the foliage is three to six times higher) the MIG detector can be applied very well to detecting low light in night vision devices. However, the MIG detector does not fit very well for the detection of visible light in silicon based on portable consumer applications for the following reasons. Depletion of the coarse substrate requires at least a few tens of volts. For a portable consumer device said voltage is clearly too high and results in too large an energy consumption. The high-strength silicone substrate is expensive and difficult to process, which increases the manufacturing costs. It is also difficult to contact the conductive backside layer reliably from the front side through the thick high strength substrate, which could be important for mass production. A batch of current generation by volume is generated in the completely empty coarse substrate, which will probably need the use of cooling. However, in portable consumer applications, detector cooling is usually not possible. The sharpness of the images is also degraded in some way because the visible light is absorbed on the back side of the detector and the signal charges have to move a large space before reaching the front surface. For this reason, the use of color filters on the back side of the device is also problematic. The depth of attenuation of red light in silicone is not greater than ten micrometers. For blue and green light, the depth of attenuation is still lower. Therefore, it is not necessary to have a coarse substrate for the detection of visible light. Instead of the coarse substrate, a thin substrate (typically about 10 μm and less than 50 μm) could be used in a subsequent thinned MIG detector. However, a thin device breaks very easily and therefore it is necessary to perform the processing of the back side at the end of the manufacturing process. In the first method, the front side of the substrate is attached to a support substrate after which the back side of the detector is thinned. In the second method, the back side of the detector is recorded only below the active area that contains the pixels and a thicker support area is left on the detector data. In both of the methods it is required that the processing of the front side is finished before the back side is thinned. This fact complicates the manufacturing of the conductive rear layer. In order to process a very thin conductive back side layer allows a good quantum efficiency for blue light, there are two possible procedures that are suitable for mass production. In the first method, the conductive backside layer is made by the implantation, which requires a hardening step of high temperature. All materials used on the front side of the device, similar to metal wiring, must have a melting point higher than the hardening temperature. This fact prohibits the use of many materials that are common in aluminum-like integrated circuits. In the second method a thin layer is deposited on the back side of the device. However, a large amount of nebulous current is created at the interface between the conductive layer and the substrate and in order to suppress this, cooling of the current is required. There is also an inherent problem related to the conductive backside layer in case the MIG detector is used for the detection of visible light. In order to detect poorly lit areas of an image properly, the size of the microprocessor must be large and the large optical aperture must be used. With the objective of also have good quantum efficiency for blue light, the conductive backside layer has to be very thin. If the image also contains very bright areas, a large amount of secondary charge current will be running in the layer on the driver's back side. The large current running in the conductive rear side layer, and the small thickness and large area of the conductive rear side layer, however results in a large resistant voltage drop in the conductive rear side layer. This strong voltage drop degrades the quality of the image and can lead to malfunction of the detector, especially if the detector is very thin. Another problem in the MIG detector is that a relatively high voltage is required to clear the signal load in the MIG, especially if a high dynamic range is desired, that is, if a large signal load capacity of the MIG is desired. Still another problem is that in some cases, the isolation of the generated surface and the signal loads must be improved in the MIG detectors.

BRIEF DESCRIPTION OF THE INVENTION An object of the present invention is to provide a semiconductor radiation detector comprising a modified internal gate, in which the problems created by the conductive back layer are eliminated. Another objective of the present invention is to provide a structure for a semiconductor radiation detector comprising the modified internal gate, by means of which the signal load can be cleared using only a small voltage. Still another object of the present invention is to provide means for improving the separation of the charges generated from surface and the signal loads. The objects of the present invention are achieved with a semiconductor radiation detector, which comprises a volume layer of semiconductor material, and additionally comprises on the first surface of the volume layer in the following order: a gate semiconductor layer internal modified of a second type of conductivity, and semiconductor point neutralisers of a second type of conductivity, adapted to be coupled to at least one voltage point in order to create the points corresponding to the point neutralizers. The device is characterized in that it comprises a first type of conductivity of the first contact, such that said voltage point is a potential difference between the point neutralizer and the first contact and the volume layer is of the first type, and the device is not it comprises, on the second surface of the volume layer opposite the first surface, a conductive backside layer which could transport the secondary charges outside the active area of the device and which could function as a radiation entry window. The invention is based on the idea of removing the conductive rear layer from the MIG detector. It must be understood that the Secondary charges generated in the volume layer can be collected inside the active area by retaining channels instead of using a conductive back layer to transport them out of the active area. The collection of the secondary charges of the volume layer within the active area can be further improved by opening in the MIG layer and by trench structures that are filled in adequately. It should also be understood that a novel MIG detector can be illuminated from the front. However, the novel illuminated front MIG detector suffers from poor blue response due to the following fact. The barrier layer forms a barrier for the signal charges between the MIG layer and the surface of the device. The blue light is absorbed mainly between this barrier and the front surface of the detector and in this way a large portion of the signal loads generated by the blue light is collected by a point neutralizer and not by the MIG. When realizing that said barrier does not exist below the retaining channels and that the channel retainer area can be used as a radiation entry window and additionally realizing that the retaining channels can be very thin and that the channel retainer area can be very large, the blue response of a device illuminated from the front can be significantly improved. However, the large area of the retainer channels reduces the signal load transport gradient potential in the MIG layer below the retainer channels. Additionally, it should be noted that this gradient potential that carries the signal loads can be improve through a structured MIG layer, that is, through a discontinuous MIG layer. Another possibility is to alter the concentration neutralizer in the barrier layer, in the MIG layer or in the volume layer after the MIG layer in order to improve the gradient potential that carries the signal loads. In the detector illuminated from the front, the secondary charges that are generated in the volume can be collected by the retainer channels within the active area, and / or by a contact substrate located outside the active area on the front side of the detector, and / or by a substrate of contact located on the edge of the microprocessor detector or on the back side of the microprocessor detector. The signal loads can be cleared using only a small voltage through a structure where, in the barrier layer of the first type of conductivity is a neutralized region of the second type of conductivity or a local reduction of the net layer of neutralization barrier between the modified inner gate layer of the second type of conductivity and a point neutralizer of the second type of conductivity or by a structure where there is a trench between the MIG layer neutralizer and the front surface of the detector, and where a gate controls the flow of signal loads from a modified inner gate layer for the point neutralizer or for the front surface of the detector through the neutralized region of the second type of conductivity, through the trench structure or through local reduction of the barrier layer neutralizer.

The separation of the signal charges and the charges generated from the surface can be improved, for example, by means of a neutralized region of the second type of conductivity located between the barrier layer and the front surface of the detector or by a structure with gates.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates an embodiment of the present invention, Figure 2 illustrates a polarization scheme of the semiconductor radiation detector presented in Figure 1, Figure 3 illustrates another embodiment of the present invention, Figure 4, illustrates the electron potentials of the detector presented in Figure 1, which uses holes as the signal loads, Figure 5 illustrates the electron potentials of the detector presented in Figure 2, which uses holes as the signal loads, Figure 6 illustrates the electron potentials of the detector presented in Figure 3, which uses holes as the signal loads, Figure 7 illustrates yet another embodiment of the present invention, Figure 8 illustrates a radiation detector of semiconductor of Figure 7, using protection structures, Figure 9 illustrates the electron potentials of the detector presented in Figure 7, which uses holes as the s signal charges, Figure 10 illustrates the electron potentials of the detector presented in Figure 8, which uses holes as the signal loads. Figure 11 illustrates four points of one embodiment of the present invention. Figure 12 illustrates four points of Another embodiment of the present invention, Figure 13, illustrates a cross section of the detector presented in Figure 11, Figure 14, illustrates a cross section of the detector presented in Figure 12, Figure 15, illustrates four points of yet another embodiment of the present invention, Figure 16A, illustrates a cross section of the detector presented in Figure 15, Figure 16B, illustrates a cross-section of the detector shown in Figure 15, Figure 16C, illustrates a cross-section of the detector presented in FIG. Figure 15, Figure 16D illustrates a cross section of the detector presented in Figure 15, Figure 17A illustrates an embodiment of the present invention. n, FIG. 17B illustrates an embodiment of the present invention; FIG. 17C illustrates an embodiment of the present invention; Figure 17D illustrates an embodiment of the present invention, Figure 17E illustrates an embodiment of the present invention, Figure 17F illustrates an embodiment of the present invention, Figure 17G illustrates an embodiment of the present invention, Figure 17H, illustrates a cross section of the detector shown in Figure 17G, Figure 171 illustrates a cross section of the detector shown in Figure 17G, Figure 18A illustrates one embodiment of the present invention, Figure 18B illustrates a MODE OF THE PRESENT INVENTION, FIGURE 18C illustrates an embodiment of the present invention, FIGURE 19 illustrates an embodiment of the present invention, FIGURE 20 illustrates an embodiment of the present invention, FIGURE 21 illustrates an embodiment of FIG. of the present invention, Figure 22 illustrates an embodiment of the present invention, Figure 23 illustrates an embodiment of the present invention, Figure 24 illustrates a mode of The present invention, FIG. 25, illustrates a modified gate gate internal gate detector, FIG. 26, illustrates another embodiment of the modified gate signal internal signal detector, FIG. 27A, illustrates a cross section of the detectors. presented in Figures 25 and 26, Figure 27B illustrates a cross section of the detector shown in Figure 26, Figure 28 illustrates a modified gate gate internal gate detector, Figure 29 illustrates another embodiment of the modified gate gate internal gate detector. Figure 30, illustrates a modified gate gate internal gate detector, FIG. 31, illustrates another embodiment of the modified gate gate internal gate detector, FIG. 32A, illustrates a procedure step of a possible detector manufacturing process, FIG. Figure 32B illustrates a procedure step of a possible detector manufacturing process; Figure 32C illustrates a process step of a possible detector manufacturing process; Figure 32D illustrates a process step of a manufacturing process possible detector, Figure 33A, illustrates a step of the method of a possible detector manufacturing process, Figure 33B, illustrates a process step of a possible detector manufacturing process, Figure 33C illustrates a process step of a possible detector manufacturing process, Figure 34A illustrates a process step of a possible detector manufacturing process, Figure 34B illustrates a process step of a manufacturing process of detector possible, Figure 34C, illustrates a step of the procedure of a possible detector manufacturing process, Figure 34D, illustrates a step of the procedure of a possible detector manufacturing process, Figure 35A, illustrates a zone detector of the prior art, Figure 35B, illustrates a prior art zone detector, Figure 36, illustrates the simulated results, Figure 37, illustrates the simulated results, Figure 38, illustrates the simulated results, Figure 39, illustrates the simulated results, Figure 40 illustrates the simulated results, Figure 41 illustrates the simulated results, Figure 42 illustrates the results two simulations, Figure 43 illustrates the simulated results, Figure 44A illustrates an embodiment of the present invention, Figure 44B illustrates an embodiment of the present invention, Figure 44C illustrates one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION Figure 1 is a schematic cross section of a radiation detector, which is preferably thin and illuminated from behind. The rear surface 102 of the detector, through which the radiation enters the detector, is descending in the drawing. On the back surface there may be an optional anti-reflective or scintillating coating. The volume layer 103 of the detector is made of a semiconductor material of a first type of conductivity. The first and second types of conductivities or vice versa, refer to neutralized semiconductors in positive or negative form, with an excess of positive and negative charges, respectively. On the front side of the detector from the rear surface towards the front surface is a first layer 104 of the second type of conductivity, which will then be referred to as the modified internal gate (MIG) layer. In the device of Figure 1, there are holes in the MIG layer. In front of the MIG layer 104 is again a layer 105 of the first type of conductivity, designated herein as the barrier layer. In the upper part of layer 105 there may be layers of protective insulation and conductive layers that form cable connections, gates, capacitors and etc. Standard implantations, preferably implantations similar to points 111, 112, 113, 114, 115 that have the second type of conductivity, are made in the barrier layer 105 on the front surface of the detector and are subsequently referred to as point neutralizers. The polarized channel retainer neutralizers 121, 122, 123, 124, 125 of the first type of conductivity are placed between or after the points. The dotted line 150 represents the limit of the emptying region when a polarization voltage VP is connected between the point neutralizers and channel retainer neutralizers. In the embodiment of Figure 1, the emptying regions of the individual points are not joined and the volume layer, therefore, is at the same potential as channel retainer neutralisers. The polarized channel retainer neutralisers collect all the secondary charges generated within the semiconductor detector that includes the secondary loads generated within the volume layer, that is, the secondary charges are collected within the active area, which contains the points and it is not necessary to transport the secondary loads outside the active area. For this reason, a conductive back layer is not required. The cutting line 160 is perpendicular to the front and rear surface and penetrates the point neutralizer. The cutting line 170 is also perpendicular to the front and rear surface and penetrates the channel retainer neutralizer. The electron potential curves in the cut lines 160 and 170 corresponding to the case where the first type of conductivity is a type n and the second type of conductivity is a type p are represented in Figure 4. The potential curve of 403 electron on the cutting line 170 is a straight horizontal line that corresponds to the axis distance. The straight horizontal parts of the potential energy curves correspond to the neutral areas and the inclined areas correspond to the emptied areas. The electron potential curve 402 corresponds to the cut line 160 and represents the case where the difference potential between the channel retainer neutralizer and the point neutralizer which is VP. Within the MIG layer, a minimum of three-dimensional potential energy (3D) 412 is formed for the holes, which in this case are signal loads. The number of holes in this minimum of 3D potential energy can be detected as a decrease in the effective channel width of a field effect transistor (FET) or as a decrease in the effective base width in a bipolar junction transistor ( BJT). In Figure 4, this corresponds to the decrease in width 415. The location 416 within the barrier layer is a mount point for both electrons and holes. The electron potential curve 401 in the cut line 160 corresponds to the case where a clear voltage V C is connected between the neutralization channel retainer and the point neutralizers. In this case, the minimum of 3D potential energy 412 for the orifices vanishes and the signal loading orifices are collected by the point neutralizers. Figure 2 is a schematic cross-section of a semiconductor radiation detector preferably illuminated from a thin back having holes in a MIG layer as in the device of Figure 1. However, in this case, the bias voltage between the The channel retainer neutralizer and point neutralisers is so high that there is only a single joined void region 250. Point neutralizer 215 is a protective ring surrounding the active area. The electron potential curves on the cut lines 260 and 270 are shown in Figure 5. When the potential difference between the channel retainer neutralizer and the point neutralizer is Vp, the electron potential curve 502 corresponds to the cut line 260 and the electron potential curve 503 correspond to the cut line 270. When the potential difference between the channel retainer neutralizer and the point neutralizer is VC, the electron potential curve 501 corresponds to the cutting line 260 and the electron potential curve 504 correspond to the cutting line 270. The neutral area 53 in the curves 503 and 504 corresponds to the retaining channels. The neutral area to the right after the back side of the device in the electron potential energy curves 501 - 504, correspond to the neutral volume layer that is floating. When the potential difference between the channel retainer neutralizer and the point neutralisers is VP, that is, during the signal load integration period, in curve 503 there is an energy barrier potential 514 for the charge electrons secondary that are collected by the volume layer. When the potential difference between the channel retainer neutralizer and the point neutralisers is Ve, there is no energy barrier potential in curve 504 and the secondary charges that are collected in the volume layer during the Signal load integration period can flow freely to the channel neutralizer retainer. Figure 3 is a schematic cross section of a preferably thin backlit semiconductor radiation detector having a continuous MIG layer 304. The dotted line 350 is the boundary of the emptying region. The volume layer is floating in this detector arrangement as in the detector of Figure 2. The operation principle of the detector of Figure 3 is presented in Figure 6 and this corresponds to the operation principle of the detector of Figure 2 The devices in Figures 1 to 3, preferably they are thin illuminated back detectors. In thin detectors, near infrared light must be filtered in order to remove the phenomenon of chromatic alteration. The detectors of Figures 1 to 3 can also be illuminated from the front. In this case, the volume layer is preferably several hundred micrometers thick, although the emptying region on the front side of the detector is only a few micrometers thick. Due to the thickness of the volume layer it is not necessary to filter near infrared radiation. The detectors in Figures 1 to 3 may also have additional layers and structures similar to anti-reflection coatings, color filters, microlenses, flashing coatings, etc. It could be observed that in the case illuminated from the front, the possible layers of material on the back side of the volume layer are not essential for the application and that in the case illuminated from behind, the layers of possible materials on the front side of the device are not essential for the application. In the detectors of Figures 1 to 3, the secondary charges are collected within the active area by the channel retainer neutralizers, ie, the conductive backside layer is not necessary. In this way, the difficulties associated with the manufacture of the thin conductive rear side layer on the back side of a thin detector and for the operation of said detector are avoided. Figure 7 illustrates an embodiment of the present invention illustrated from the front, where part of the secondary loads is collected by the channel retainer neutralizer and part is collected by a neutralizer of a first conductivity type 725 which functions as the contact with the volume layer. This contact 725 is on the front side of the detector, although it could also be on the rear surface of the detector or on the edge of the microprocessor of the detector 700. If the neutralizer 715 forms a point, the channel retainer neutralizer is preferably on the same potential that contact 725. The operation principle of said detector is presented in Figure 9. The boundary of drain region 750 is also shown in Figure 7. Figure 9 illustrates the situation where the first type of conductivity is a type n and the second type of conductivity is a type p. The curves 901 and 902 of Figure 9 represent the electron potential energies in the cutting line 760, which penetrate the neutralizers of point. The curve 901 corresponds to the situation where the point neutralizer 111 is connected to the potential V and the curve 902 corresponds to the situation where the point neutralizer 111 is connected to the clear voltage Ve. The curve 903 represents the potential energy of electron on the 770 cutting line. The 3D mount point 914 for both electrons and holes forms a barrier for secondary charge electrons. Part of the secondary charges are thus collected by the contact 725. If the neutralizer 715 forms a protective ring surrounding the active area, the channel retainer neutralisers and the contact volume layer 725 may be at a different potential . This situation is presented in Figure 10. Curve 1003 of Figure 10 represents the electron potential energy on a cut line 770. The neutral volume layer and the channel seals, in this case, are at different potentials. , i.e., the neutral volume layer is at a potential of zero and the caliper stops are at a potential V- Figure 8 represents another illuminated modality from the front of the present invention. In this, the additional detector protective rings 816, 817 and 818 surround the innermost protective ring 215. Some trench structures are not necessary in these protective rings due to the structured MIG layer. The layer 808 is an optical semiconductor layer of the first type of conductivity. The layer 808 preferably has a higher resistivity than the volume layer and is preferably manufactured by epitaxial growth. The 808 layer it can also be a good depth in which case it could be structured. The boundary of the emptying region 850 is also shown in Figure 8. If the optional layer 808 is not used, the operation principle of the detector of Figure 8 corresponds exactly to Figure 10, that is, the energy curves of electron potential 901 and 902 corresponds to the cut line 860 and the electron potential energy curve 103 corresponds to the cut line 870. If the optional layer 808 is used, the only difference of Figure 10 is that the Potential curves 901, 902 and 1003 terminate essentially at the interface of layer 808 and the low resistance substrate. The optional layer 808, it is preferably made of the semiconductor material of first conductivity type although it could also be made of the semiconductor material of the second type of conductivity. However, this may require a method wherein the depth of the trenches is recorded through said optional layer, in order to prevent the high leakage current from arising from the detector microprocessor edge. It should be noted that the channel seals in the detectors of FIGS. 7 and 8 could be floating, which means that the secondary current could run from the channel seals on a potential barrier formed in the MIG layer to the smoothing layer. volume, where it could be collected by the volume layer contact 725. In case the channel seals are floating, the semiconductor material is silicon, the silicon dioxide is used as an insulating material and the prior type of Conductivity is type n, no channel neutralizer retainer is required (hereafter, silicon dioxide is termed as oxide). In this case, the positive oxide charge results in an electron accumulation layer at the silicone-oxide interface. This two-dimensional electron (2D) gas layer functions as a channel retainer. A 2D electron or orifice gas layer can also be formed artificially in the semiconductor insulator interface by the use of a suitably polarized MOS structure. In this case, the 2D charge gas layer and the MOS structure of the channel retainer. The channel retainer area can thus be formed from the 2D charge gas layer or the channel retainer neutralizer or both. The detectors presented in Figures 7 and 8, may also have openings in the MIG layer, just like the detectors in Figures 1 and 2. If the channel seals and the volume layer are polarized in different potencyles, the openings in the MIG layer must be such that no current is running between the volume layer and the channel seals. If the channel seals are not polarized to different potentials, the openings in the MIG layer can be arbitrarily wide. In this case, the channel seals are either floating or at the same potential as the volume layer. It is important to note that Figures 7 to 10 are not to scale because the volume layer is actually much thicker than the one presented in the drawing, that is, the volume layer is preferably made with a thickness of hundreds of micrometers The volume layer it preferably has a low resistance, that is, a resistance much higher than the almost intrinsic substrate presented in PCT / FI2004 / 000492 and PCT / FI2005 / 000359. In the detectors of Figures 7 and 8, part of the secondary loads is collected inside the active area by the channel retainer neutralizer and part of the secondary charges are transported through the volume layer to a substrate contact 725. Due to the front illumination and due to the low resistance substrate, the conductive back layer is not necessary. In this way the difficulties associated with the manufacture of the thin conductive rear side layer on the back side of a thin detector and the operation of said detector are avoided. A major difference between the back and front-lit detector modes described above is that front-lit detectors are much cheaper to manufacture than back-lit detectors, although front-lit detectors have a lower fill factor and in this way a lower quantum efficiency in the visible spectrum than the detectors illuminated from behind. Figure 11 illustrates an embodiment of the present invention wherein the signal load can be cleared using only a small voltage, that is, the point neutralizer does not have to be connected to a clear voltage in order to remove the charge from signal. Area 1191 lacks the MIG layer, which means that area 1191 corresponds to a MIG layer cover. The aperture 1191 in the MIG layer assists in the collection of the signal loads by improving the signal charge transport potential gradient in the MIG layer. The channel retainer neutralizer1121 collects the secondary loads. There are four points in Figure 11 of which, the cut line 1180 partially cuts two points. The cut line 1180 corresponds to the cross section presented by Figure 13. The point neutralizers 1131, 1132 and 1133 of the second type of conductivity are source and drain neutralizations of a double metal oxide semiconductor field effect transistor ( MOSFET) that belongs to a pixel and the conductors 1341 and 1342 are the gates of the double MOSFET. The point neutralizers 1335, 1336 and 1337 are source and drain neutralizations and conductors 1344 and 1345 are gates of a double MOSFET belonging to another point. The signal loads are collected in the optional local enhancements 1392 of the MIG layer neutralizer under the gate of an FET or under the emitter of a BJT they improve the dynamic range of the detector. The signal loads can be moved within the point between the local improvements 1392 of the MIG layer neutralizations by polarizing the source and drain neutralizations and the gates in an appropriate manner. This allows multiple readings of the signal load, which reduces the noise read. At the front of the device is a point neutralizer 1334 of second type conductivity that functions as a clear contact. Between the MIG layer and the cleared contact 1334 is a neutralized region 1393 of conductivity of the second type, which can be produced by an average energy implant. Alternatively, areas 1334 and 1393 represent a trench that is filled with semiconductor conductivity material of the second type. The flow of the signal charges of the MIG layer through the area 1393 is controlled by a gate 1343. This arrangement allows to clear the signal load with a low voltage and can also be used as an anti-transformation structure. The layer 1307 is a protective insulating layer, which preferably is silicon dioxide, although it can also be any other insulating material. It is important to note that the contact openings through the insulating layer 1307 and the contacts are not presented in Figure 13 for the purpose of clarity. Figure 12 illustrates another embodiment of the present invention wherein the signal load can be cleared using a small voltage. The channel retainer neutralizer 1221 collects the secondary loads. The cut line 1280 corresponds to a cross section presented by Figure 14. The gate MOS 1343 of Figure 11 is replaced by a neutralizer 1443 of the first type of conductivity, which acts as a junction gate that controls the flow of the signal loads from the MIG layer to the front surface of the detector. The neutralizer 1443 is surrounded by a circular point neutralizer 1433 of the second type of conductivity that acts as a source / drain neutralizer of four double MOSFETs. The neutralizer of second conductivity type 1434 acts as a signal charge clearing contact that is connected to the MIG layer using the insulating material 1494, which is deposited on the walls of a trench. The insulating material 1494 is preferably silicon dioxide, which is positively charged. Due to the positive oxide charges, a 2D electron gas layer is formed over the interface of silicon dioxide and silicone. If the first type of conductivity is the p type and the second type of conductivity is the n type, the signal charges are electrons. Therefore the signal charge electrons flow in the 2D electron gas layer from the MIG layer to the neutralizer 1434, if the gate 1443 is suitably polarized. The channel retainer neutralizer has to be very large as the channel retainer neutralizer 1221 in Figure 12, if the insulator layer 1307 is positively charged and if the first type of conductivity is the p type and the second type of conductivity is the type n. In this case, the channel retainer neutralizer acts as a radiation entry window. The MIG layer is also preferably structured below the large area of the channel retainer neutralizer 1221. If the insulating layer 1307 is positively charged and if the neutralizer of the first type is of the n type and the neutralizer of the second type is of the p type, the channel retainer neutralizer may be very small as the channel retainer neutralizer 1121 in Figure 11. In this case there is a 2D electron gas layer at the interface between the insulating layer 1307 and the semiconductor material throughout, except in the close proximity of the point neutralizers 1331 - 1337 and the gates 1341 to 1345. The electron gas layer 2D and the insulating layer 1307 function in this case as a channel retainer and as a radiation entry window which can be very thin. In addition to this, the 2D electron gas layer transports the secondary charges to the channel neutralizer retainer 1121. Also the large area of the channel retainer neutralizer 1221 can be made very thin due to the fact that the secondary charge transports distances in this channel. layer that are very short. The thin radiation input window allows good quantum efficiency for blue light. Figure 15 illustrates four pixels of yet another embodiment of the present invention, where the signal load can be cleared using only a small voltage. The ring as the channel retainer neutralizer 1521 collects the secondary charges. The exterior of this ring as the neutralizer 1521 the positively charged insulating material forms a 2D electron gas layer at the insulating semiconductor interface, which acts as a radiation entry window and as a channel retainer. Area 1591 lacks the MIG layer. The cut lines 1580, 1581, 1582 and 1583 correspond to the cross sections presented by Figures 16A, 16B, 16C and 16D. The point neutralizer 1632 which forms the source / drain and the gate 1646 belong to a point. The point neutralizers 1635, 1636 and 1637 that form the sources and drains and gates 1644, 1645 and 1647 belong to another point. The signal charge clearing neutralizer 1634 is connected to the MIG layer through an insulating layer 1494, which is covered by a layer conductive 1695. The conductive layer 1695 can be polarized so that a layer of 2D charge gas is formed in the insulator and semiconductor materials. The conductive layer 1695 and the gates 1646 and 1647 can thus control the flow of the signal charges from the MIG layer to the neutralizer 1634. This gate can also be divided into four different parts belonging to each point (this also applies to gate 1343). It is also possible to use only the conductive layer 1695 without the insulating material if the conductive material is chosen appropriately. In this case, the signal charges can be collected by the conductive layer 1695. It should be noted that the points of Figures 11, 12 and 15 are not to scale. The channel retainer area includes the area of the channel retainer neutralizer and the area of a possible 2D charge gas layer that must cover a large portion of the total area of the point in order to allow a good quantum efficiency for light blue. The proportion of the channel retainer area that belongs to a point for the total point area must be at least 0.3. In a beneficial way this proportion must be of the proportions 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, where 0.9 corresponds to the most beneficial proportion and 0.4 corresponds to the least beneficial proportion. It is also important to note that the opening in the MIG layer is not the only way to improve the signal load transport potential gradient in the MIG layer. You can alter the concentration neutralizer in the barrier layer, in the MIG layer or in the volume layer after the MIG layer. It is possible to reduce or improve the neutralizer of the MIG layer, for example, by means of suitable implants and concealment structures. Locally increasing the barrier layer neutralizer, locally reducing the MIG layer neutralizer and locally increasing the barrier layer neutralizer after the MIG layer neutralizer to create a minimum local potential for the signal loads within the MIG layer. On the other hand, by locally reducing the barrier layer neutralizer, locally increasing the MIG layer neutralizer and locally reducing the volume layer of the neutralizer after the MIG layer, the maximum local potential can be created for the signal charges in the layer MIG. The conductive layer 1695 and the gates 1643, 1646 and 1647 can thus control the flow of the signal charges of the layer in the MIG layer. By structuring the improvements or reductions in the MIG layer in an appropriate manner, the signal charge transport potential gradient in the MIG layer can be improved in a similar way as the hole in the MIG layer neutralizer. The signal load transport gradient should be such that there is a suitable gradient throughout the MIG layer carrying the signal loads to the desired location, which is, for example, the local enhancement 1392 of the MIG layer neutralizer. . Also, the local improvement of the MIG layer neutralizer can be structured by adding points to the neutralizer, in such a way that it resembles a star in order to increase the signal load transport potential gradient in the MIG layer. If the proportion of the area of channel retainer of the area of total points is large, one may be forced to use, instead of one of the methods mentioned above, several methods at the same time in order to ensure a signal load transport potential gradient sufficiently large in the MIG layer. Still another important aspect is that instead of the neutralizer 1393, the second type of conductivity, the connection of the MIG layer and the clear contact 1393, a local reduction in the barrier layer neutralizer can also be used. This local reduction of the barrier layer neutralizer should be placed in the same location as the neutralizer 1393, that is, below the cleared contact 1393 and surrounded by the clear gate 1343. The ratio of the net concentration neutralizer in a local reduction of the first conductivity of the barrier layer neutralizer to the net concentration neutralizer in the layer neutralizer Barrier of the first type of conductivity without the local reduction of the barrier layer neutralizer should be less than 0.9. In a beneficial way, the proportion should be less than 0.8, 0.7, 0.6, 0.5, 0.4, 0.3, 0.2 and 0.1, where 0.8 is the least beneficial proportion and 0.1 is the most beneficial proportion. The removal of the signal load requires a higher voltage for the cleared contact 1393 through the local reduction of the barrier layer neutralizer of the first type of conductivity than through the neutralizer 1393 of the first type of conductivity. He neutralizer 1393 is in this way, more beneficial than the local reduction of the barrier layer neutralizer. The embodiments of Figures 17A, 17B and 17C illustrate ways to improve signal separation and generated surface charges and ways to improve the collection of secondary charges from the bulk layer. Figures 17D, 17E, 17F, 17G, 17H and 171, illustrate the additional ways to improve the separation of the signal and the charges generated from the surface. The point neutralizers 1731, 1732 and 1733 form the source and the drain and the conductors 1741 and 1742 form the gates of the double MOSFET. Channel retainer neutralizer 1721 collects secondary loads. The collection of secondary loads from the volume layer can be improved by means of full trenches. The trench in Figure 17A is filled with semiconductor material 1726 of the first type of conductivity; the trench in Figure 17B is filled with insulating material 1727 and the trench in Figure 17C, is filled with insulating material 1727 and conductive material 1728. The insulating material of the device of Figure 17C can be removed, if the conductive material is chosen appropriately. The semiconductor material 1726 of the first type of conductivity could also be replaced by a plurality of deep implants of the first type of conductivity having different energies. The principle of operation of structures 1726, 1727 and 1728, which improve the collection of secondary loads from the volume layer, is similar to the principle of operation of structures 1393, 1494 and 1695, clearing the signal charges of the MIG layer. However, in this case, the secondary loads are collected instead of the signal loads. In devices having a thin volume layer, the filled trenches 1726, 1727 and 1728 can penetrate through the full volume layer. The collection of the secondary charges can additionally be improved by surrounding the filled trenches 1726, 1727 and 1728 through an opening 1791 in the MIG layer. The filled trenches 1726, 1727 and 1728 can have any shape; these may be, for example, cylindrical in shape or may surround the entire point. If the trenches are deep enough, the neutral volume layer potential of Figures 5 and 6 can be brought to the channel retainer potential, a situation corresponding to Figure 4. The neutralizations 1771, 1772 and 1774 of the second Conductivity type, the neutralizer 1775 of the first type of conductivity and the gates 1773 and 1776 in Figures 17A-17F improve the separation of the signal and the charges generated from the surface. The neutralizer 1771 of the second type of conductivity in Figure 17A is preferably emptied, resulting in a channel for the surface generated charges of the second type of conductivity. This channel guides the generated surface loads of the second type of conductivity towards the point neutralizations 1731 and 1733. The neutralizer 1774 of the second type of conductivity in Figure 17D surrounds the channel retainer neutralizer 1721. The Neutralizer 1774 is separated from the point neutralizer although it could equally well reach the point neutralizer as in the case of neutralizer 1771 in Figure 17A. Neutralizer 1774 is preferably also emptied in this case. The area of the emptied surface can be controlled by the polarization of gate 1773 in Figure 17C. The gate 1776 in FIG. 17F can be polarized in such a way that a channel for the generated surface loads of the second type is formed below the gate that improves the separation of the signal and the charges generated from the surface. The neutralizations 1772 and 1775 alter the potential profile in the device in order to improve the signal separation and the charges generated from the surface. Instead of the neutralizer of the second type of conductivity 1771, the neutralizer of the first type of conductivity can also be used, which is preferably partially emptied. In order to prevent the neutralizer 1771 of the second type of conductivity from forming a conductive path between the point neutralisers 1731, 1732 and 1733, the neutralizer 1771 is preferably structured. One embodiment of said structuring is presented in Figure 17G, where neutralizer 1777 corresponds to neutralizer 1771. Cut lines 1780 and 1781 correspond to the cross sections presented in Figures 17H and 171. In Figure 17G, the proportion of the shortest distance between the neutralizer 1777 and the gates 1741 and 1742 and the source / drain neutralizer 1732, is beneficially greater than 0.1 times the distance L between the neutralizers of source / drain. In a beneficial way, the proportion must be greater than 0.2L, 0.3L, 0.4L, 0.5L, 0.6L, 0.7L, 0.8L, 0.9L, L, 1.2L, 1.5L, 1.5L and 2L, where the first is the least beneficial proportion and the last is the most beneficial proportion. The embodiments of Figures 18A, 18B and 18C illustrate ways to improve the dynamic range of the detector, that is, to improve the signal load capacity of the MIG. The point neutralizers 1831 and 1833 are source / drain neutralizations and conductors 1841 and 1842 are the gates of a double MOSFET. The signal load capacity of the MIG layer has already been improved by local improvements 1392 of the MIG layer neutralizer. In FIGS. 18A, the signal load capacity of the MIG is further improved by making the source / drain neutralizer 1832 wider and by adding an aperture 1891 in the MIG layer between the two local enhancements 1392 of the MIG layer neutralizer. In Figure 18B, the signal loading capacity of the MIG is improved by dividing the charge / drain neutralizer 1832 into two separate parts 1834 and 1835 and adding a gate 1843 between them. In Figure 18C, the signal load capacity is further improved by adding between the two neutralizations 1834 and 1835 a conductivity neutralizer of the second type 1836 and two gates 1844 and 1845. The MOFSET is not the only possible transistor to be used in conjunction with the MIG. In Figure 19, the MOSFETs are replaced by the BJTs. The point neutralizers 1931 and 1932 of the second type of conductivity are the base neutralizations and the 1951 and 1952 neutralizations of the first type of conductivity are emitter neutralizations of the BJTs. The channel retainer neutralizer 1921 of the first type of conductivity acts as the collector of the BJTs that collect the charges of the first type of conductivity emitted by the emitters. In addition to the three conventional nodes of the BJT, there is a fourth node, that is, the MIG. The signal loads in the MIG reduce the effective base width. The signal loads in the MIG thus increase the emitter current. This effect can be measured and the amount of signal loads can be inferred from this measurement. The point neutralizer 1931 contains an additional buckling 1974. There is also a local enhancement 1929 of the barrier layer neutralizer under the channel retainer neutralizer 1321 which increases the electric field component in the MIG layer which carries the signal loads towards the local enhancement 1392 of the MIG layer neutralizer. The form of this local enhancement of the barrier layer neutralizer can also be structured in the same way as the openings 1191 and 1591 in the MIG layer neutralizer. In Figure 20, the MOSFETs are replaced by the junction field effect transistors (JFET), where the neutralization gates are replaced by the MOS 2042 gates. The point neutralizers 2031 and 2032 act as the source, drain and channel neutralizer. The point neutralisers also have a 2075 buckling.

In all the transistors that comprise the MIG that have been introduced so far, the signal loads in the MIG decrease the channel or effective base width. Figures 21 and 22 illustrate the transistors comprising the MIG, where the signal loads in the MIG increase the effective base width or channel. In Figure 21, the point neutralizers 2131 and 2132 act as a neutralization collector and the neutralizations 2151 and 2152 of the first type of conductivity act as base neutralizations. The emitters 2161 and 2162 are formed, for example, of polycrystalline semiconductor material, such as polycrystalline silicone. In Figure 20, point neutralizer 2206 is a continuous layer that encapsulates the channel retainer neutralizer 2221. Within the point neutralizer 2206 of the first type of conductivity are also source and drain neutralizations 2251, 2252, 2253 and 2254 of the two MOSFETs. The conductors 2241 and 2242 are the gates of the two MOSFETs. Figures 23 and 24 illustrate semiconductor devices that can be used as memory units or as transistors. The neutralizations 2331 and 2332 of the second type of conductivity are the drain and source and the conductor 2341 is the gate of a MOSFET. Gate 2342 controls the flow of signal charges from neutralizer 2333 of the second type of conductivity through region 1393 of the second type of conductivity to the MIG layer. In Figure 24, the MOSFET is replaced by a BJT having a base 2431 of the second type of conductivity and an emitter 2451 of the first type of conductivity. At Figure 24, the trench filled 1494, 1695 has the same function as the neutralized region 1393 in Figure 23. If the devices of Figures 23 and 24 are used as memory cells, a MIG filled with signal loads and an empty MIG of signal charges corresponds to one and zero or vice versa. If the devices in Figures 23 and 24 are used as transistors, the MIG layer can be very heavily neutralized, that is, it can have a neutral interior and form a fourth node in the transistors in addition to the source, drain and gate in FETs and in addition to the issuer, base and collector in the BJTs. There is still a way to operate the MIG detector and the detector New MIG that has not been introduced before. In this case, the source, drain and gate potentials of an FET are such that the channel below the gate closes, that is, there is no current path between the source and drain neutralizations. If the source and drain neutralizations are at the same potential, only one point neutralizer can be used instead of two separate ones (see, for example, Figure 25). When, for example, an optical pulse is absorbed in the detector, the signal charges will flow to the MIG. This will create a current pulse in the gate and this current pulse can be used for the precise timing of the incident. The novel MIG detectors corresponding to the gate signal detection mode are presented in Figures 25 to 31. The cut line 2580 in Figure 25 and the cut line 2680 in Figure 26 correspond to the cross section presented in FIG. Figure 27A.

The potential of the optional channel retainer neutralizer 2721, the point neutralizer 2731 and the gate 2741 are such that the semiconductor insulator interface under the gate is emptied to allow signaling from the gate. If the semiconductor insulator interface is blocked at the point neutralizer potential, ie if there is a channel below the gate, no signal will be produced or only a very weak signal will be produced at the gate when the MIG arrives at the gate. number of signal loads. The signal load is cleared, for example, by applying a polarization clearing between the channel retainer neutralizer and the point neutralizer. The gate signal MIG detector of Figure 25 can be attached to a read microprocessor. In this case, due to the structure of the detector in points, the information of both time and position 2D can be obtained. Another possibility is to connect the gates to a row or column of points by means of a metallic cable in order to form a zone detector. The zone detector allows the detection of time and position information of one dimension (1 D). Still another possibility is to divide the gate into two or three different parts and connect each part to a different signal line, and which signals from different directions in order to achieve the 2D position information. The gate signal MIG detector of Figure 26 is a zone detector and the cut line 2680 corresponds to the cross section shown in Figure 27A. In Figure 27B, gate 2741 of the detector in Figure 26 is surrounded by a layer 2707 insulator on the upper part of which is a metal cover 2742. The optional metal cover 2741, additionally reduces the noise of the detector. The zone detectors in Figures 28 to 31 represent different embodiments of the gate signal MIG detector. In Figure 28, gate 2841 is connected to a second metal layer 2842, which is used to connect the gates in a row or column of points. The point neutralizer is, in this case, separated into two parts 2831, 2832. The detector in Figure 29 is the same as in Figure 26, except that the point neutralizer 2731 is divided into a number of parts 2931, 2932. The broken line in Figure 29 corresponds to the point neutralizer that is located below the gate. The same practice is also applied to Figures 30 and 31. The detector in Figure 30 has only one point neutralizer 3031, after which there are two gates 3041 and 3042. In Figure 31, there is only one gate 3141 and a multitude of point neutralizers 3131. An enhancement of the MIG layer neutralizer can be located, for example, below gates 28 to 31. Prior art zone detectors are presented in Figures 35A and 35B. In the structure of Figure 35A, the signal loads are collected by the neutralizer 2531, which alters the potential of the neutralizer 3531. This creates a signal for the gate 3541, which is maintained at a constant potential. However, neutralizer 3531 also collects the generated surface current in addition to the current generated volume This leakage current also results in a current of equal size in the gate. The noise in the detector can be compared to the square root of the leakage current. The generated surface current is usually about 20 times higher than the volume generated current in said zone detectors and thus the noise of the zone detector in Figure 35A is high. In the prior art device of Figure 35B the neutralizer 3532 and 3533 collects the generated surface charge which means that the neutralizer 3531 collects only the generated current of volume. However, the neutralizations 3532 and 3533 collect, also part of the signal loads. Therefore, the signal-to-noise ratio is usually more deficient in the zone detector of Figure 35B than the zone detector of Figure 35A. The signal to noise ratio of the zone detector in Figure 35A and the gate signal MIG detector can be easily compared. The ratio of parasitic capacitance to total of the device in Figure 35A is close to zero. In the gate signal MIG device, the ratio of parasitic capacitance to total being about 0.5, resulting in the smaller half of signal than in the prior art device. However, in the MIG detector the point neutralisers collect the generated surface charges and the MIG only collects the generated current of volume. Therefore, the noise in the prior art device of Figure 36A is the square root of 20 higher than in the MIG detector. Therefore, the proportion signal to noise in the MIG detector is estimated to be 2.2 times higher than in the prior art detector of Figure 35A. The signal load can also be transferred through a number of points to a reading point, where the amount of signal load is measured. The device presented in Figure 44A is an example of said device, which is operated in the same way as a charge coupled device (CCD). When the potentials of the point neutralizers 4431, 4432 and 4433 of the first type of conductivity change cyclically, the signal load can be transported in the MIG layer 104. The point neutralisers also operate as anti-transformation structures. The signal load in the MIG layer can be removed by applying a voltage dip between the channel retainer neutralizer 4421 and the point neutralizers. If the device is illuminated from the front, the size of the channel retainer area must be large in order to have a good quantum efficiency for blue light. The cut lines 4480 and 4481 correspond to the cross sections presented by Figures 44B and 44C. Figures 32B-32D, 33A-33C and 34A-34D, represent the examples of different manufacturing methods of the novel MIG detector. The starting point of these methods is the discovered substrate 103 of the first type of conductivity presented in Figure 32A. The manufacturing process presented in Figures 32B-32D resembles a CMOS process. In Figure 32B, two steps of concealment of two implants of the second type and a conduction in order to form a deposit 3204 and a neutralized region 3292, both being of the second type of conductivity. The deposit 3204 is used to form the MIG layer and the optional neutralized region 3292 is used to form the MIG layer neutralizer enhancement. In Figure 32C, a concealment step, an implant of first type of conductivity and a conduction is performed, in order to form the reservoir 3205 of the first type of conductivity. The reservoir 3205 acts as the barrier layer. In Figure 32D, at least one concealment step and implant is performed to form the point neutralizer 3231 of the second type of conductivity. The neutralizer 3234 of the second type of conductivity is an optional signal load clearing contact. In this stage, other concealment and implant steps can also be performed which form, for example, channel seals, substrate contact and other neutralized regions introduced above. After this hardening step is carried out, which is followed by the formation of the insulating and metallic layers and the deflection through the insulating layers. A novel MIG detector fabrication method involving depth implants is presented in Figures 33A-33C. In Figure 33A, a concealment step, an implant of the first type of conductivity and a conduction are performed in order to form the reservoir 3305 of the first type of conductivity. The reservoir 3305 acts as the barrier layer. In Figure 33B, two concealment steps and two High energy depth implants of the second type of conductivity are made in order to form the MIG layer 3304 and the optional enhancement 3392 of the MIG layer neutralizer. A concealment step and a second type of implant are made in Figure 33C in order to form the point neutralizer 3331. The neutralizer 3334 of the second type of conductivity is an optional signal charge clear contact. Region 3396 is a local reduction of the net barrier layer neutralizer located below the cleared contact. At this stage, other concealment and implant steps can also be performed. Then, a hardening step is carried out, which is followed by the formation of the insulating and metallic layers and the deflection through the insulating layers. The reservoir 3305 that forms the barrier layer could equally well be manufactured using an energy implant means. The manufacturing process presented in Figures 34A-34D resembles a Bichos procedure. In Figure 34A, two concealment steps and two implants of the second type of conductivity and an optional hardening step are performed, in order to form the MIG layer 3404 and the optional enhancement 3492 of the MIG layer neutralizer. In Figure 34B, an epitaxial layer 3405 of the first type of conductivity is developed in the upper part of the semiconductor substrate 103. The epitaxial layer 3405 forms the barrier layer. In Figure 34C, a concealment step and a first type implant is made on the epicase 3405 in order to form the point neutralizer 3431 and the optional clear contact. 3434. In this step, other concealment and implant steps can be performed in order to form, for example, the channel seals. In Figure 34D, an optional concealment and a second energy implant passage means of the second type of conductivity is presented in order to form a neutralizer of the second type 3493 between the cleared contact 3434 and the MIG layer 3404. It should be noted that, if the dose of this second type of energy implant means is low, it only results in a reduction of the net barrier layer neutralizer under the cleared contact 3434. It should be noted that the methods presented above for manufacturing the detector New MIG, they are only examples. In addition to these, there are numerous other methods. The different process steps introduced above of the different methods can also be combined in any suitable form or order. The substrate contact and the channel retainer neutralizer were not presented in Figures 32A-34D, although, as established, they can be added to the procedure flow in the appropriate situation. The thin backlit device can be manufactured from the devices of Figures 32D, 33C and 34D, for example, by grinding the back side of the volume layer 103 or manufacturing the devices of Figures 32D, 33C and 34D in a SOI silicon wafer. The SOI silicon wafer has two layers of semiconductor and between them an insulating layer. After another semiconductor layer is processed, the other side of the semiconductor silicon wafer can be sanding under the active area of the detector until the insulating layer is reached. After this, the insulating layer can be sanded after which, the back layer of the processed semiconductor layer, ie, the volume layer, can be covered for example, with an anti-reflective coating. The first type of conductivity can be type n and the second type of conductivity can be type p. The embodiments of Figures 11-34D and 44A-44C, can be applied to the illuminated detectors, both from the front and from the back and any combination thereof can be used. It is important to note that the modalities and procedures presented in Figures 11, 34D and 44A - 44C, can also be used in the MIG detector presented by PCT / FI2004 / 000492 and PCT / FI2005 / 000359 and have the conductive backside layer. The points can have any shape or shape, instead of those shown in Figures 11, 12 and 15. Double transistor points or multiple transistor points can be used instead of double transistor points. However, reading the signal load a number of times is twice as fast at double transistor points as at single transistor points. Instead of the MOSFET, JFET and BJT, any unipolar or bipolar transistor can be used in the points. The source of an FET or the emitter of a bipolar transistor, can be floating and can be connected to a capacitor. The points can be surrounded, preferably by ring-shaped protective structures, which are formed of MOS structures or neutralizations in order to increase the area of point. The neutralizations of the present invention can also be custom designed in any way possible using implants having different concealments, different energies, different doses and different types of conductivity. In some cases, the neutralizations can also be replaced with the appropriate metallic contacts, that is, with ohmic or Schottky contacts. The semiconductor material is preferably silicone although any other semiconductor material can be used. The semiconductor material can, for example, be germanium. The contact openings through the insulating layer 1307 and the contacts to the different neutralizations are not shown. The channel neutralizer seals are optional in the devices of FIGS. 7 and 8, and may be floating. Anti-reflection coatings, scintillation coatings or microlenses can be used in the illuminated detectors both from the front and from behind. The amount of signal charge in the MIG of a MIGFET can be obtained, for example, by measuring the change in the voltage threshold, measuring the change in the current flowing through the MIGFET or measuring the change in a voltage output over a known resistor, the change in voltage output that corresponds to the change in the current that passes through the MIGFET. The amount of signal charge in the MIG of a MIGBJT can be obtained, for example, by measuring the change in the emitter current or by measuring the change in a voltage output over a known resistor, the change in the corresponding voltage output. to the change in the current that passes through the issuer, or by measuring the change in the issuer base or threshold. The base threshold is termed as the base voltage which begins to flow the emitter current. The emitter threshold is referred to as the emitter voltage at which the emitter current begins to flow. There are also other signal load reading schemes and all reading schemes can invoke, for example, capacitors, transistors, resistors, etc. It is important to note that the MIG allows very small amounts of signal charge to be detected. This can be achieved by taking a measurement when there is a signal load in the MIG, removing the signal load from the MIG, making a measurement when there is no signal load, subtracting the first measurement from the second measurement and doing this n times. As a result, the reading span will read the noise of a measurement divided by the square root of n. However, this is not the only method to detect signal loads. The novel MIG detector (and the MIG detector) can also be designed such that with the proper operating voltage, the MIG signal load transfer back to the MIG results in an avalanche multiplication of the signal load . This avalanche multiplication cycle can be performed n times after which, the signal load has been multiplied to N x m? N, where m is the gain of the avalanche multiplication of a single signal load transfer. The first of the two methods allows a larger dynamic interval. However, the two methods also they can be combined, that is, the first method can be carried out first and then the second method. The first method, ie, the multiple reading method is performed with applied voltages less than deviation, and the second method, ie, the avalanche gain method is performed with the highest applied polarization voltages. Said combined method has the same dynamic range as the multiple reading method. In Figures 11, 12 and 15, a group of four front surface groups is presented or the back surface of the individual points can be covered by a color filter and possibly with one or more microlenses. The most superior and most superior point, for example, they have a green filter and the right and left points could have blue and red color filters, respectively. The front or rear surface of the detectors in Figures 11, 12 and 15 can also be covered with a single color filter, possibly with micro-lenses. In such a case, the light is preferably divided into three different components, being, for example, red, green and blue, and preferably, three separate microprocessors are used in the chamber. It should be noted that the invented detector must be designed in such a way that there is no central area in the barrier layer between the channel of an FET and the MIG layer and between the base of a BJT and the MIG layer because said neutral area increases the noise in the measurements. It should also be noted that all Figures 1 to 35B are not to scale and that all gates and metal layers presented in Figures 1 to 35B, can be formed of transparent conductors. It is also beneficial to use aligned structures automatically, in order to reduce the misalignment of the concealments. Instead of the square FETs, circular FETs could also be used. The figures are not to scale and therefore, the area of the channel retainer neutralizer may be much larger than that presented in the Figures. Additional layers may also exist in the device if they do not affect the operating principle of the MIG. Said additional layers may be, for example, thin semiconductor material layers of the first or second type of conductivity. There may also be electronic components for reading and selection in the microprocessor of the detector. A device that includes a detector according to an embodiment of the present invention, may also include other semiconductor microprocessors, some of which may be attached to connections to the detector points. This allows a very compact construction of structures that include detection, amplification, reading and in some cases, even storage in a very small space, such as an MCM (multiple microprocessor module) The 2D simulation results of Figures 36 to 43, demonstrate the feasibility of the MIG detector concept. Figure 36 represents a MIG detector having an n-type volume layer, a p-type MIG layer 104 and a n-type barrier layer 105. point type p 3631, 3632 and 3633 act as source / drain neutralization, gates 3641 and 3642 are used to measure and carry the signal load and channel retainer contacts 3621 are used to clear the signal load. The 3692 enhancement of the MIG layer neutralizer collects the signal loads, which in this case are holes. The situation shown in Figure 36 is simple after the signal load has been cleared by applying a clear voltage to the channel retainer contact. Figure 37 shows the situation after some generated holes of volume are accumulated in the local enhancement of the MIG layer neutralizer. In Figure 38, all holes in the left local enhancement of the MIG layer neutralizer are switched to the right local enhancement of the MIG layer neutralizer by applying the appropriate voltage that transits the point neutralizers and gates. In Figure 39, the holes in the right enhancement of the MIG layer neutralizer are transferred to the left enhancement of the MIG layer neutralizer by applying the appropriate voltage that transits to the point neutralizers and gates. It is important to note that all the potentials in Figures 36 to 39 are the same; only the location of the holes is different. Figure 40 shows the orifice concentration in both local improvements of the MIG layer of neutralizations and Figure 41 shows the combined orifice concentration of the local improvements of the MIG layer neutralizer.

In Figure 42, the potentials of the point neutralizer type p 4233, the p-type 4234 clearing contact, the n 4243 type clearing gate and the n 4221 type neutralizer, are such that the holes are accumulated in the layer MIG under the point neutralizer type p 4233. In Figure 43, the potential of the clear gate through the p-type neutralizer 4293. In addition to the effects introduced above, the simulations have shown that the change in the voltage threshold can be greater than 100 μm.

Claims (30)

NOVELTY OF THE INVENTION CLAIMS

1. - A semiconductor radiation detector device, comprising a volume layer (103) of semiconductor material, and on a first surface of the volume layer (103) in the following order: - a modified inner gate layer (104, 304) of semiconductor of the second type of conductivity, - a semiconductor barrier layer (105) of the first type of conductivity and - semiconductor point semiconductors (111, 112, 1331, 1332, 1333, 13334, 2206) of the second type of conductivity, adapted to be coupled to at least one voltage point, in order to create the points corresponding to the point neutralizers, characterized in that: the device comprises a first contact of a first type of conductivity, said point of voltage being defined as a potential difference between the point neutralizer and the first contact, - the volume layer (103) is of the first type of conductivity, and - the device does not comprise, on a second surface of the volume layer (103) opposite the first surface, a conductive backside layer that could transport the secondary charges outside the active area of the device and which could function as a radiation entry window.

2. - The semiconductor radiation detector device according to claim 1, further characterized in that a number of point neutralisers (111, 112, 1331, 1334, 1333, 1334, 2206) comprise a specific transistor of the point constructed on the neutralizer of point, said transistor being a field effect transistor or a bipolar transistor, and the semiconductor radiation detecting device comprises a signal load reading circuit adapted to measure the electrical characteristics of the point specific transistors related to the effective channel or the base dimensions of the point-specific transistors.

3. The semiconductor radiation detector device according to claim 2, further characterized in that said signal load reader circuit is adapted to measure the electrical characteristics of a specific transistor of the point related to the decrease of the channel or the width of base produced by the holes induced by radiation or electrons that accumulate in the modified inner gate layer to a location coincident with a point containing said point-specific transistor.

4. The semiconductor radiation detector device according to claim 2, further characterized in that said signal load reader circuit is adapted to measure the electrical characteristics of a specific transistor of the point related to the channel increase or base width produced by electrons induced by radiation or the holes that accumulate in the modified inner gate layer at a location coincident with a point containing said point-specific transistor.

5. The semiconductor radiation detector device according to any of claims 1 to 4, further characterized in that it comprises a channel retainer area between the points.

6. The semiconductor radiation detector device according to claim 5, further characterized in that said channel retainer area comprises neutralizers (121, 122, 1121, 1221, 1521, 1721) of the first type of conductivity, exhibiting this way the opposite type of conductivity compared to the points.

7. The semiconductor radiation detector device according to claim 6, further characterized in that the channel retainer neutralisers between the points correspond to the first contact.

8. The semiconductor radiation detector device according to claim 7, further characterized in that the secondary charges that are generated in the volume layer are collected by the channel retainer neutralizers.

9. The semiconductor radiation detector device according to claim 8, further characterized in that the volume layer is thinned from the second surface and the detector device of semiconductor radiation is illuminated from the back surface (102).

10. The semiconductor radiation detector device according to any of claims 1 to 6, further characterized in that the first contact (725) is on the rear surface (102) of the detector or outside the active area on the front surface. (101) of the detector, or on the edge (700) of the detector microprocessor.

11. The semiconductor radiation detector device according to claim 10, further characterized in that the secondary charges that are generated in the volume layer are collected by the first contact (725).

12. The semiconductor radiation detector device according to any of claims 1 to 8, 10 or 11, further characterized in that the detector is illuminated from the first surface.

13. The semiconductor radiation detector device according to any of claims 1 to 12, further characterized in that in the barrier layer (105) of the first type of conductivity there is a neutralized region (1393) of the second type of conductivity or a local reduction (3396) of the net neutralization of barrier layer between the modified inner gate layer (104) of the second type of conductivity and a point neutralizer (1334, 1434, 1634, 3334) of second conductivity type or where there is a trench (1334, 1393, 1494, 1695) between the modified inner gate layer (104) and the front surface of the detector.

14. The semiconductor radiation detector device according to claim 13, further characterized in that a gate (1343, 1443, 1643, 1685) is adapted to control the flow of signal loads from the modified inner gate layer (104). ) to the point neutralizer (1334, 1434, 1634, 3334) or to the front surface of the detector through the neutralized region (1393) of the second type of conductivity, through the local reduction (3396) of the net neutralization of the layer of barrier, or through the trench (1334, 1393, 1494, 1695).

15. The semiconductor radiation detector device according to claim 14, further characterized in that the gate is formed of a neutralizer of the first type of conductivity (1443).

16. The semiconductor radiation detector device according to claim 14, further characterized in that the gate is formed of a MOS structure (1343, 1643).

17. The semiconductor radiation detector device according to any of claims 1 to 16, further characterized in that a region (1726) of the first type of conductivity or a trench structure (1727, 1728) penetrates through the layer of modified internal gate of the second type of conductivity in order to improve the collection of secondary loads from the volume layer 103.

18. - The semiconductor radiation detector device according to any of claims 1 to 17, further characterized in that it comprises structures (1771, 1772, 1773, 1774, 1775, 1776, 1777) that improves the separation of the signal and the charges generated from the surface.

19. The semiconductor radiation detector device according to any of claims 1 to 16, further characterized in that the modified internal gate layer is discontinuous.

20. The semiconductor radiation detector device according to claim 1, further characterized in that it additionally comprises a layer of semiconductor material (808) of the first or second type of conductivity between the volume layer and the modified inner gate layer.

21. The semiconductor radiation detector device according to any of claims 1 to 20, further characterized in that it comprises at least one of the following: an alteration (1292) of the barrier layer neutralizer, a hole in the neutralizer of modified inner gate layer (1991, 1591), an improvement (1392) of the modified inner gate layer neutralizer, an alteration in the volume layer neutralizer after the MIG layer in order to improve the potential gradient of transport of signal charge in the MIG layer.

22. - The semiconductor radiation detector device according to any of claims 1 to 21, further characterized in that it comprises a local enhancement (1392) of the modified inner gate layer neutralizer under the gate of a field effect transistor or under the transmitter of a bipolar junction transistor in order to improve the dynamic range of the detector.

23. A method for detecting radiation, comprising: - coupling a number of points (111, 112, 113, 114) on a surface of a semiconductor radiation detector device to a voltage point, e - illuminating said detector semiconductor radiation with radiation: characterized in that it comprises: - collecting the signal charges induced by radiation of the first type from a volume layer (103), from a modified internal gate layer and from a barrier layer of said detector semiconductor radiation to the local minimum (412) of a three-dimensional potential function for said loads of the first type, said local minimum being coincident in location with the points (111) in a modified internal gate layer (104, 304) placed after said volume layer (103); and - detecting the amount of signal charge collected for the local minimum that coincides with the points (111).

24. The method according to claim 23, further characterized in that detecting the amount of signal load comprises observing the electrical characteristics of the transistors. Point-specific related to the effective channel or base dimensions of the point-specific transistors. The method according to claim 24, further characterized in that detecting the amount of signal load comprises observing the electrical characteristics of the point specific transistors related to the channel decrease or the base dimensions of the point specific transistors. 26. The method according to claim 25, further characterized in that detecting the amount of signal load comprises observing the electrical characteristics of the point-specific transistors related to the channel increase or the base dimensions of the point-specific transistors. 27. The method according to claim 26, further characterized in that detecting the amount of signal load comprises transferring the load related to the point through a number of points for a reading point, and observing the electrical characteristics of said reading point. 28. The semiconductor radiation detector device according to claim 5, further characterized in that the ratio of channel retainer area from one point to the total point area is at least 0.3. 29. The semiconductor radiation detector device according to any of claims 13 and 14, characterized also because the ratio of the net concentration neutralizer in the local reduction of the first conductivity of the barrier layer neutralizer to the net concentration neutralizer in the barrier layer neutralizer of the first type of conductivity without the local reduction of the layer neutralizer Barrier is less than 0.9. 30. The semiconductor radiation detector device according to claim 1, further characterized in that the channel of a field effect transistor below the gate of the field effect transistor is emptied and wherein a pulse of signal loads generated by radiation and entering the modified internal gate is detected as a current pulse in the gate.