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MX155562A - IMPROVEMENTS IN SOLID STATE AC CURRENT RELAY CIRCUIT - Google Patents

IMPROVEMENTS IN SOLID STATE AC CURRENT RELAY CIRCUIT

Info

Publication number
MX155562A
MX155562A MX199861A MX19986183A MX155562A MX 155562 A MX155562 A MX 155562A MX 199861 A MX199861 A MX 199861A MX 19986183 A MX19986183 A MX 19986183A MX 155562 A MX155562 A MX 155562A
Authority
MX
Mexico
Prior art keywords
thyristor
control circuit
solid state
whenever
chips
Prior art date
Application number
MX199861A
Other languages
Spanish (es)
Inventor
Thomas Herman
Oliver Williams
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/451,792 external-priority patent/US4535251A/en
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of MX155562A publication Critical patent/MX155562A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H10W72/5445—
    • H10W72/5522—
    • H10W90/753—

Landscapes

  • Electronic Switches (AREA)
  • Facsimile Heads (AREA)
  • Thyristors (AREA)
  • Facsimile Scanning Arrangements (AREA)

Abstract

The relay has two separate and identical power thyristors 210 and 211 connected in anti-parallel arrangement. The powerthyristors are each optically switched, lateral conduction devices and both are switched by illuminating their surface by reflected illumination from an LED 225. Each thyristor is provided with a respective control circuit which includes a MOSFET transistor 230-231, for clamping its respective thyristor gate whenever the voltage across the thyristor exceeds a given absolute value or whenever there is a high dV/dt transient across the thyristor. The control circuit for the control transistor includes a capacitance divider 236-239, one element of which is the distributed capacitance 238, 239 of the control transistor; a resistor 234, 235 and a zener diode 232, 233. The control circuit components may be integrated into the thyristor chips. Each of the two identical power chips and the LED chip are spaced from one another and mounted on an alumina substrate. <IMAGE>
MX199861A 1982-12-21 1983-12-21 IMPROVEMENTS IN SOLID STATE AC CURRENT RELAY CIRCUIT MX155562A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/451,792 US4535251A (en) 1982-12-21 1982-12-21 A.C. Solid state relay circuit and structure
US55502583A 1983-11-25 1983-11-25

Publications (1)

Publication Number Publication Date
MX155562A true MX155562A (en) 1988-03-25

Family

ID=27036523

Family Applications (2)

Application Number Title Priority Date Filing Date
MX4482A MX160049A (en) 1982-12-21 1983-12-21 IMPROVEMENTS IN OPTICALLY ACTIVATED THYRISTOR
MX199861A MX155562A (en) 1982-12-21 1983-12-21 IMPROVEMENTS IN SOLID STATE AC CURRENT RELAY CIRCUIT

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MX4482A MX160049A (en) 1982-12-21 1983-12-21 IMPROVEMENTS IN OPTICALLY ACTIVATED THYRISTOR

Country Status (12)

Country Link
KR (1) KR900004197B1 (en)
BR (1) BR8307043A (en)
CA (1) CA1237170A (en)
CH (1) CH664861A5 (en)
DE (1) DE3345449A1 (en)
FR (1) FR2538170B1 (en)
GB (2) GB2133641B (en)
IL (1) IL70462A (en)
IT (1) IT1194526B (en)
MX (2) MX160049A (en)
NL (1) NL8304376A (en)
SE (1) SE8306952L (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590750B1 (en) * 1985-11-22 1991-05-10 Telemecanique Electrique SEMICONDUCTOR POWER SWITCHING DEVICE AND ITS USE FOR REALIZING A STATIC RELAY IN AC
GB2234642A (en) * 1989-07-19 1991-02-06 Philips Nv Protection for a switched bridge circuit
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
GB2254730B (en) * 1991-04-08 1994-09-21 Champion Spark Plug Europ High current photosensitive electronic switch
JP3495847B2 (en) * 1995-09-11 2004-02-09 シャープ株式会社 Semiconductor integrated circuit with thyristor
US6518604B1 (en) 2000-09-21 2003-02-11 Conexant Systems, Inc. Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure
EP3249815B1 (en) * 2016-05-23 2019-08-28 NXP USA, Inc. Circuit arrangement for fast turn-off of bi-directional switching device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416839B2 (en) * 1973-03-06 1979-06-25
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2932969A1 (en) * 1979-04-20 1980-10-30 Ske Semiconductor relay circuit on single chip - uses two LED's isolated from remainder of circuit and optically excited thyristors
DE2922250A1 (en) * 1979-05-31 1980-12-11 Siemens Ag LIGHT CONTROLLED TRANSISTOR
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
DE3019907A1 (en) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München LIGHT-CONTROLLED TWO-WAY THYRISTOR
FR2488046A1 (en) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc DMOS controlled semiconductor power device - uses DMOS FET to drive thyristor with photodiodes deposited on insulating layer with power device using most of substrate area
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller

Also Published As

Publication number Publication date
CH664861A5 (en) 1988-03-31
MX160049A (en) 1989-11-13
CA1237170A (en) 1988-05-24
GB2133641A (en) 1984-07-25
KR840007203A (en) 1984-12-05
GB2174242A (en) 1986-10-29
IL70462A0 (en) 1984-03-30
GB8604263D0 (en) 1986-03-26
KR900004197B1 (en) 1990-06-18
IT8324285A1 (en) 1985-06-20
FR2538170B1 (en) 1988-05-27
IT8324285A0 (en) 1983-12-20
NL8304376A (en) 1984-07-16
DE3345449C2 (en) 1989-08-17
GB2174242B (en) 1987-06-10
GB2133641B (en) 1986-10-22
GB8333998D0 (en) 1984-02-01
FR2538170A1 (en) 1984-06-22
IT1194526B (en) 1988-09-22
SE8306952D0 (en) 1983-12-15
SE8306952L (en) 1984-06-22
IL70462A (en) 1987-09-16
DE3345449A1 (en) 1984-07-12
BR8307043A (en) 1984-07-31

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