MD4377B1 - Semiconductor photoelectric converter and method for manufacturing thereof - Google Patents
Semiconductor photoelectric converter and method for manufacturing thereof Download PDFInfo
- Publication number
- MD4377B1 MD4377B1 MDA20100068A MD20100068A MD4377B1 MD 4377 B1 MD4377 B1 MD 4377B1 MD A20100068 A MDA20100068 A MD A20100068A MD 20100068 A MD20100068 A MD 20100068A MD 4377 B1 MD4377 B1 MD 4377B1
- Authority
- MD
- Moldova
- Prior art keywords
- photoelectric converter
- current
- solder
- semiconductor layer
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 229910000679 solder Inorganic materials 0.000 abstract 5
- 239000000853 adhesive Substances 0.000 abstract 4
- 230000001070 adhesive effect Effects 0.000 abstract 4
- 239000002159 nanocrystal Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 230000005686 electrostatic field Effects 0.000 abstract 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 abstract 2
- WBYRVEAPTWYNOX-UHFFFAOYSA-N [Fe].[Cd] Chemical compound [Fe].[Cd] WBYRVEAPTWYNOX-UHFFFAOYSA-N 0.000 abstract 1
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000012153 distilled water Substances 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000011253 protective coating Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to solar radiation-to-electric energy conversion technique, in particular to the design of contacts and the chemical composition of materials used in the manufacture of conductive and semiconductor elements of the photoelectric converter.The semiconductor photoelectric converter comprises a semiconductor layer, on the front surface of which are applied metal current-collecting contacts and a layer of organosilicon adhesive, and on the back surface is applied a solder layer. The semiconductor layer is made of silicon nanocrystals, the crystallographic planes of which are oriented in one direction. The tin-lead solder comprises antimony in an amount of 3…4% of the alloy weight. The current-collecting contacts are made of iron-cobalt or iron-cadmium galvanic alloy, and the protective coating of organosilicon adhesive of a thickness of 0.17…0.2 mm is applied on all surfaces of the converter.The method for manufacturing the semiconductor photoelectric converter consists in that silicon nanocrystals are oriented by rotating an external electrostatic field source around the semiconductor layer and is experimentally determined the angle under which is fixed the external electrostatic field source. It is melt the film of tin-lead solder, doped with antimony, are deposited the solder oriented silicon nanocrystals while concomitantly alloying one part of nanocrystals with antimony and the solder is cooled. The obtained plate is immersed in a plating bath with electrolyte and is carried out the anodic treatment of the front surface of the semiconductor layer for 25 s at a current density amplitude of 55…60 A/dm2. It is fixed a stencil to the cleaned from oxides and impurities front surface of the obtained plate, is cathodically connected the plate to a periodic current source with reverse amplitude and width adjustable pulse and at a ratio of the cathode and anode current pulse amplitudes equal to 6:1, for 3 min is increased the density of the direct pulse from 0 to 40 A/dm2 and is deposited the galvanic alloy during 12…20 min at the prescribed current ratio. The resulting photoelectric converter is washed with distilled water at a temperature of ~ 330K, dried, immersed in organosilicon adhesive, removed from the container with the adhesive and dried for 10 minutes in a drying room at a temperature of 360K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20100068A MD4377C1 (en) | 2010-05-19 | 2010-05-19 | Semiconductor photoelectric converter and method for manufacturing thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20100068A MD4377C1 (en) | 2010-05-19 | 2010-05-19 | Semiconductor photoelectric converter and method for manufacturing thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| MD20100068A2 MD20100068A2 (en) | 2011-11-30 |
| MD4377B1 true MD4377B1 (en) | 2015-10-31 |
| MD4377C1 MD4377C1 (en) | 2016-05-31 |
Family
ID=45815309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20100068A MD4377C1 (en) | 2010-05-19 | 2010-05-19 | Semiconductor photoelectric converter and method for manufacturing thereof |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4377C1 (en) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2507822A1 (en) * | 1979-05-29 | 1982-12-17 | Photowatt International | Polycrystalline silicon solar cells prodn. - by exposing to unipolar microwaves to diffuse dopant |
| EP0541033A3 (en) * | 1991-11-08 | 1993-06-30 | Siemens Aktiengesellschaft | Process of fabrication of thin-film polycristalline silicon solar cells |
| JPH0653538A (en) * | 1992-07-28 | 1994-02-25 | Toshiba Corp | Semiconductor light receiving element |
| RU2127472C1 (en) * | 1996-03-28 | 1999-03-10 | Всероссийский научно-исследовательский институт электрификации сельского хозяйства | Method for production of semiconductor photodetector |
| JPH10117006A (en) * | 1996-08-23 | 1998-05-06 | Kanegafuchi Chem Ind Co Ltd | Thin-film photoelectric conversion device |
| US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
| US6057507A (en) * | 1998-09-10 | 2000-05-02 | Jx Crystals Inc. | Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell |
| RU2144718C1 (en) * | 1999-06-24 | 2000-01-20 | Государственный научный центр РФ Институт медико-биологических проблем | Semiconductor photoelectric solar energy converter for space vehicles |
| DE10056726A1 (en) * | 2000-11-15 | 2002-05-23 | Solar Gmbh Deutsche | Directed solidified polycrystalline silicon used as material for solar cells has electrically active grain boundaries in part of the material volume |
| RU2227343C2 (en) * | 2001-11-27 | 2004-04-20 | Миловзоров Дмитрий Евгеньевич | Thin films of hydrogenized polycrystalline silicon and technology of their production |
| JP3727879B2 (en) * | 2001-12-18 | 2005-12-21 | 三菱重工業株式会社 | Method for evaluating crystalline Si thin film |
| DE10225606A1 (en) * | 2002-06-07 | 2004-01-08 | Daimlerchrysler Ag | Semiconductor device and method of manufacture |
| JP4240984B2 (en) * | 2002-10-08 | 2009-03-18 | 三洋電機株式会社 | Photoelectric conversion device |
| GB0225202D0 (en) * | 2002-10-30 | 2002-12-11 | Hewlett Packard Co | Electronic components |
| RU2303830C2 (en) * | 2005-03-21 | 2007-07-27 | Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") | Thick-film contact of silicon photoelectric converter and its manufacturing process |
| US8545944B2 (en) * | 2008-09-19 | 2013-10-01 | Sri International | Method for producing solar grade films from semiconductor powders |
| RU2009144623A (en) * | 2009-12-01 | 2011-06-10 | Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) | SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE |
-
2010
- 2010-05-19 MD MDA20100068A patent/MD4377C1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD4377C1 (en) | 2016-05-31 |
| MD20100068A2 (en) | 2011-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |