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MA31943B1 - Nanocomposite hybride - Google Patents

Nanocomposite hybride

Info

Publication number
MA31943B1
MA31943B1 MA32960A MA32960A MA31943B1 MA 31943 B1 MA31943 B1 MA 31943B1 MA 32960 A MA32960 A MA 32960A MA 32960 A MA32960 A MA 32960A MA 31943 B1 MA31943 B1 MA 31943B1
Authority
MA
Morocco
Prior art keywords
relates
electroconductive
nanoparticle hybrid
hybrid nanocomposite
hybrid
Prior art date
Application number
MA32960A
Other languages
Arabic (ar)
English (en)
Inventor
Cyril Martini
Jörg Ackermann
Frédéric Fages
Original Assignee
Univ Aix Marseille Ii
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Aix Marseille Ii, Centre Nat Rech Scient filed Critical Univ Aix Marseille Ii
Publication of MA31943B1 publication Critical patent/MA31943B1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

La présente invention concerne un matériau nanocomposite hybride composé de nanocristaux allongés inorganiques électroconducteurs greffés sur au moins une partie de leur surface avec un composé organique électroconducteur, ainsi que son procédé de préparation. L'invention concerne également des films minces, des cellules solaires et des dispositifs commutables comprenant ledit nanocomposite hybride.
MA32960A 2007-12-28 2010-06-29 Nanocomposite hybride MA31943B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2007/004465 WO2009083748A1 (fr) 2007-12-28 2007-12-28 Nanocomposite hybride

Publications (1)

Publication Number Publication Date
MA31943B1 true MA31943B1 (fr) 2010-12-01

Family

ID=39712354

Family Applications (1)

Application Number Title Priority Date Filing Date
MA32960A MA31943B1 (fr) 2007-12-28 2010-06-29 Nanocomposite hybride

Country Status (11)

Country Link
US (1) US20110056543A1 (fr)
EP (1) EP2227836B1 (fr)
KR (1) KR101423911B1 (fr)
CN (1) CN101952989B (fr)
AU (1) AU2007363281B2 (fr)
BR (1) BRPI0722353A2 (fr)
IL (1) IL206688A0 (fr)
MA (1) MA31943B1 (fr)
TN (1) TN2010000301A1 (fr)
WO (1) WO2009083748A1 (fr)
ZA (1) ZA201004614B (fr)

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US20110253205A1 (en) * 2008-09-27 2011-10-20 The Regents Of The University Of California Nanoscale Solar Cell Configuration
CN102439733A (zh) * 2009-03-06 2012-05-02 佛罗里达大学研究基金会公司 空气中稳定的有机-无机纳米粒子杂化太阳能电池
CN102473773A (zh) * 2009-07-27 2012-05-23 犹他大学研究基金会 平行的同轴分子叠片阵列
CN101969102B (zh) * 2010-08-09 2012-05-23 吉林大学 全水相纳米晶/导电聚合物杂化太阳能电池的制备方法
WO2012049167A1 (fr) 2010-10-11 2012-04-19 Universite De La Mediterranee Aix-Marseille Ii Nouveaux dérivés oligothiophènes, leurs procédés de préparation et leurs utilisations
US8399939B2 (en) * 2010-12-03 2013-03-19 Massachusetts Institute Of Technology Color selective photodetector and methods of making
CN102443251B (zh) * 2011-09-21 2013-03-20 中国科学院理化技术研究所 铁氧化物/聚（3，4-二氧乙基）噻吩复合纳米棒的制备方法
KR101349293B1 (ko) * 2012-02-03 2014-01-16 전북대학교산학협력단 나노섬유 복합체 및 이의 제조방법
KR101386617B1 (ko) * 2012-04-06 2014-04-17 광주과학기술원 자기조립된 유무기 나노복합체를 광활성층에 구비하는 유기태양전지 및 그 제조방법
WO2014052887A2 (fr) 2012-09-27 2014-04-03 Rhodia Operations Procédé de fabrication de nanostructures d'argent et copolymère utile dans un tel procédé
JP6053607B2 (ja) * 2013-05-15 2016-12-27 株式会社豊田中央研究所 有機増感色素、色素増感型太陽電池及び色素増感型太陽電池モジュール
CN105233874B (zh) * 2013-11-07 2017-07-14 山东科技大学 一步法制备卟啉功能化纳米硫化锌的工艺
US9595525B2 (en) 2014-02-10 2017-03-14 International Business Machines Corporation Semiconductor device including nanowire transistors with hybrid channels
DE102015205230B4 (de) * 2015-03-23 2023-01-19 Universität Duisburg-Essen Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement
CN104725971B (zh) * 2015-03-25 2016-11-16 常州大学 一种含二氧化钛/凹凸棒石纳米复合材料的多功能隔热涂料及其制备方法
CN107219269B (zh) * 2017-04-26 2019-04-19 北京科技大学 用于室温下的氨气传感器及其制备方法
KR102244906B1 (ko) * 2017-09-28 2021-04-26 주식회사 엘지화학 티타니아-탄소나노튜브-황(TiO2-x-CNT-S) 복합체 및 그의 제조방법
EP3705581A4 (fr) * 2017-10-30 2021-08-18 Infusion Tech Procédé de lyse de pathogènes et d'extraction d'acides nucléiques à l'aide de nanoétoiles d'oxyde de zinc
CN107994119B (zh) * 2017-11-28 2020-11-03 义乌市牛尔科技有限公司 一种有机无机杂化太阳能电池及其制备方法
CN109929540A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 一种纳米颗粒及其制备方法与太阳能电池
CN109929557A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 一种复合膜及其制备方法与应用
CN109929541A (zh) * 2017-12-15 2019-06-25 Tcl集团股份有限公司 一种复合膜及其制备方法与应用
KR102030955B1 (ko) * 2019-01-15 2019-10-10 재단법인 철원플라즈마 산업기술연구원 유무기 하이브리드용 유니버셜 분자층을 포함하는 유무기 복합체 및 이의 제조방법

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EP0613585A4 (fr) * 1991-11-22 1995-06-21 Univ California Nanocristaux semi-conducteurs lies de maniere covalente a des surfaces solides inorganiques, a l'aide de monocouches auto-assemblees.
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
JP5081345B2 (ja) * 2000-06-13 2012-11-28 富士フイルム株式会社 光電変換素子の製造方法
JP2002356400A (ja) 2001-03-22 2002-12-13 Canon Inc 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置
WO2003089515A1 (fr) * 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Composition de semi-conducteur organique, element semi-conducteur organique et procede pour les produire
US7265037B2 (en) * 2003-06-20 2007-09-04 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
US7923109B2 (en) * 2004-01-05 2011-04-12 Board Of Regents, The University Of Texas System Inorganic nanowires
FR2873492B1 (fr) * 2004-07-21 2006-11-24 Commissariat Energie Atomique Nanocomposite photoactif et son procede de fabrication
EP1838994A4 (fr) * 2004-11-10 2010-12-08 Univ California Procedes de fabrication de nanotiges fonctionnalisees

Also Published As

Publication number Publication date
US20110056543A1 (en) 2011-03-10
IL206688A0 (en) 2011-07-31
WO2009083748A1 (fr) 2009-07-09
AU2007363281A1 (en) 2009-07-09
AU2007363281B2 (en) 2014-07-10
KR20100134554A (ko) 2010-12-23
CN101952989B (zh) 2012-11-28
BRPI0722353A2 (pt) 2014-03-18
EP2227836A1 (fr) 2010-09-15
TN2010000301A1 (en) 2011-11-11
KR101423911B1 (ko) 2014-07-28
ZA201004614B (en) 2012-10-31
CN101952989A (zh) 2011-01-19
EP2227836B1 (fr) 2013-09-18

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