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Kakushima et al., 2008 - Google Patents

Impact of thin La2O3 insertion for HfO2 MOSFET

Kakushima et al., 2008

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Document ID
3725798512124532220
Author
Kakushima K
Okamoto K
Adachi M
Tachi K
Sato S
Kawanago T
Song J
Ahmet P
Sugii N
Tsutsui K
Hattori T
Iwai H
Publication year
Publication venue
ECS Transactions

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Snippet

The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility …
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