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Ryoo et al., 2021 - Google Patents

Device characterization of nanoscale vertical-channel transistors implemented with a mesa-shaped SiO2 spacer and an In–Ga–Zn–O active channel

Ryoo et al., 2021

Document ID
2816422628118597911
Author
Ryoo H
Ahn H
Seong N
Choi K
Hwang C
Chang S
Yoon S
Publication year
Publication venue
ACS Applied Electronic Materials

External Links

Snippet

A nanoscale vertical-channel thin film transistor (V-TFT) with a channel length shorter than 160 nm was fabricated and characterized, in which In–Ga–Zn–O (IGZO) and SiO2 thin films were prepared by atomic layer deposition and plasma-enhanced chemical-vapor deposition …
Continue reading at pubs.acs.org (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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