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Kaeding et al., 2006 - Google Patents

Realization of high hole concentrations in Mg doped semipolar (101 1) GaN

Kaeding et al., 2006

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Document ID
2642841511831870011
Author
Kaeding J
Asamizu H
Sato H
Iza M
Mates T
DenBaars S
Speck J
Nakamura S
Publication year
Publication venue
Applied physics letters

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The authors report on the growth of Mg doped semipolar (10 1 1) GaN layers on vicinal (100) Mg Al 2 O 4 substrates miscut in the⟨ 011⟩ direction by metal-organic chemical vapor deposition. A maximum hole concentration of 2.4× 10 18 cm− 3 and a maximum mobility of 8 …
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    • H01L33/26—Materials of the light emitting region
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