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Jurczak et al., 2002 - Google Patents

Elevated Co-silicide for sub-100nm high performance and RF CMOS

Jurczak et al., 2002

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Document ID
2556383359439750621
Author
Jurczak M
De Potter M
Rooyackers R
Jeamsaksiri W
Redolfi A
Grau L
Lauwers A
Lindsay R
Peytier I
Augendre E
Badenes G
Publication year
Publication venue
32nd European Solid-State Device Research Conference

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In this paper we show that the ultimate limit of Cosilicide expected for 100nm CMOS technology node can be postponed to the next generation thanks to its elevation by selective epitaxy. We demonstrate that conventional Co-silicide combined with elevated S/D can be …
Continue reading at www.researchgate.net (PDF) (other versions)

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