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Masui et al., 2008 - Google Patents

Nonpolar and semipolar orientations: material growth and properties

Masui et al., 2008

Document ID
2305618929867275933
Author
Masui H
Nakamura S
Publication year
Publication venue
Materials Science Forum

External Links

Snippet

Nitride-based optoelectronic devices prepared in the c orientation have been successfully introduced to the global marketplace and are changing the way we think about lighting. A part of the research interest has shifted toward nonpolar and semipolar orientations, which …
Continue reading at www.scientific.net (other versions)

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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
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    • H01L21/02436Intermediate layers between substrates and deposited layers
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    • H01L21/02367Substrates
    • H01L21/0237Materials
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
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    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
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