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Tokumitsu et al., 2012 - Google Patents

Evaluation of Channel Modulation in In2O3/(Bi, La) 4Ti3O12 Ferroelectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements

Tokumitsu et al., 2012

Document ID
2274356424397008774
Author
Tokumitsu E
Kikuchi K
Publication year
Publication venue
Ferroelectrics

External Links

Snippet

Channel formation in In2O3/(Bi, La) 4Ti3O12 ferroelectri-gate thin film transistors is discussed by means of capacitance-voltage characteristics. When the negative gate bias is applied, only the overlap regions are responsible for the capacitance, because the channel …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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