Roy et al., 2003 - Google Patents
Fabrication and characterization of polycrystalline SiC resonatorsRoy et al., 2003
View PDF- Document ID
- 18407114775812679286
- Author
- Roy S
- DeAnna R
- Zorman C
- Mehregany M
- Publication year
- Publication venue
- IEEE Transactions on electron devices
External Links
Snippet
This paper presents the development of polycrystalline 3C silicon carbide (polySiC) lateral resonant devices, which are fabricated by a three-mask surface micromachining process using silicon dioxide (SiO/sub 2/), polysilicon, and nickel (Ni) as the isolation, sacrificial, and …
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