Kim et al., 2018 - Google Patents
Field driven magnetic racetrack memory accompanied with the interfacial Dzyaloshinskii-Moriya interactionKim et al., 2018
- Document ID
- 18238029275658968324
- Author
- Kim J
- Lee H
- Hong J
- You C
- Publication year
- Publication venue
- Journal of Magnetism and Magnetic Materials
External Links
Snippet
The in-plane magnetic field pulse driven domain wall motion on a perpendicularly magnetized nanowire is numerically investigated by performing micromagnetic simulations and magnetic domain wall dynamics are evaluated analytically with one-dimensional …
- 230000005291 magnetic 0 title abstract description 69
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure using magnetic domain propagation
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