Raymond et al., 2000 - Google Patents
Scatterometry for the measurement of metal featuresRaymond et al., 2000
- Document ID
- 18186849756010639468
- Author
- Raymond C
- Farrer S
- Sucher S
- Publication year
- Publication venue
- Metrology, Inspection, and Process Control for Microlithography XIV
External Links
Snippet
Scatterometry, an optical metrology based on the principle of diffraction, has received a considerable amount of attention in the literature in the past decade. By measuring and analyzing the light scattered, or diffracted, from a patterned periodic sample, the dimensions …
- 238000005259 measurement 0 title abstract description 88
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
- G03F7/70616—Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
- G03F7/70625—Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
- G03F7/70616—Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
- G03F7/70633—Overlay
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management and control, including software
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical means
- G01B11/02—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical means
- G01B11/24—Measuring arrangements characterised by the use of optical means for measuring contours or curvatures
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1370828B1 (en) | Line profile asymmetry measurement using scatterometry | |
| US7639371B2 (en) | Line profile asymmetry measurement | |
| TWI250601B (en) | Method and apparatus employing integrated metrology for improved dielectric etch efficiency | |
| US6819426B2 (en) | Overlay alignment metrology using diffraction gratings | |
| Raymond | Scatterometry for semiconductor metrology | |
| CN101047109B (en) | Critical dimension control method using spectrum sensing | |
| US20030000922A1 (en) | Using scatterometry to develop real time etch image | |
| KR101071654B1 (en) | Line Profile Asymmetry Measurement | |
| US11175592B2 (en) | Methods and apparatus for inspection of a structure and associated apparatuses | |
| Raymond et al. | Scatterometry for the measurement of metal features | |
| Murnane et al. | Scatterometry for 0.24-0.70 um developed photoresist metrology | |
| Yang et al. | Line-profile and critical-dimension monitoring using a normal incidence optical CD metrology | |
| Baum et al. | Scatterometry for post-etch polysilicon gate metrology | |
| Raymond et al. | Applications of angular scatterometry for the measurement of multiply periodic features | |
| Murnane et al. | Subwavelength photoresist grating metrology using scatterometry | |
| Dasari et al. | Scatterometry metrology challenges of EUV | |
| Raymond et al. | Asymmetric line profile measurement using angular scatterometry | |
| Ke et al. | 90-nm lithography process characterization using ODP scatterometry technology | |
| Jekauc et al. | Metal etcher qualification using angular scatterometry | |
| Lafferty et al. | Gauge control for sub-170-nm DRAM product features | |
| Kim et al. | Successful application of angular scatterometry to process control in sub-100-nm DRAM device | |
| Jang et al. | Scatterometry measurement method for gate CD control of sub-130nm technology | |
| Kostoulas et al. | Scatterometry for lithography process control and characterization in IC manufacturing | |
| Shivaprasad et al. | Measurement of semi-isolated polysilicon gate structure with the optical critical dimension technique | |
| Apak et al. | Photomask ADI, AEI, and QA measurements using normal incidence optical-CD metrology |