[go: up one dir, main page]

Forestier et al., 2004 - Google Patents

A new nonlinear capacitance model of millimeter wave power PHEMT for accurate AM/AM-AM/PM simulations

Forestier et al., 2004

Document ID
18152362765230903616
Author
Forestier S
Gasseling T
Bouysse P
Quéré R
Nebus J
Publication year
Publication venue
IEEE microwave and wireless components letters

External Links

Snippet

A new one-dimensional (1-D) nonlinear gate-source Cgs and gate-drain Cgd capacitance model designed for power-PHEMT transistors is presented. The capacitance values are extracted from measured [S] parameters, along a load-line corresponding to a power …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/102A non-specified detector of a signal envelope being used in an amplifying circuit
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used

Similar Documents

Publication Publication Date Title
Maas et al. Modeling MESFETs for intermodulation analysis of mixers and amplifiers
Willing et al. A technique for predicting large-signal performance of a GaAs MESFET
Forestier et al. A new nonlinear capacitance model of millimeter wave power PHEMT for accurate AM/AM-AM/PM simulations
Miller et al. A new empirical large signal model for silicon RF LDMOS FETs
Winslow et al. Principles of large-signal MESFET operation
Yhland et al. A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers
EP0997833A2 (en) Large signal model for a pseudomorphic heterojunction electron mobility transistor
US6388512B1 (en) Process for a high efficiency Class D microwave power amplifier operating in the S-Band
Pedro et al. A novel non-linear GaAs FET model for intermodulation analysis in general purpose harmonic-balance simulators
Staudinger et al. An examination of several large signal capacitance models to predict GaAs HEMT linear power amplifier performance
Ramella et al. TCAD-based Pseudo-Common-Gate X-PAR model for GaAs stacked power amplifier design
Orzati et al. A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects
Grebennikov et al. An analytic method of microwave transistor oscillator design
Mallavarpu et al. The importance of gate charge formulation in large-signal PHEMT modeling
Curtice Nonlinear modeling of compound semiconductor HEMTs state of the art
Wilk et al. SOI MESFET RF power amplifiers at the 45nm node
Mallet-Guy et al. A distributed, measurement based, nonlinear model of fets for high frequencies applications
Jarndal et al. Reliable PSO based noise modeling approach applied to GaN HEMTs
Maas Division by current: A new approach to FET capacitance modeling
Rawat et al. Nonlinear Device Characterization and Modeling for Power Amplifiers
Ramella et al. Physics-based Modelling for Stacked Power Amplifier design at Millimetre-Wave Frequency
ur Rehman et al. An Improved Technique to Assess AC Performance of a Submicron GaN HEMTs
Giannini et al. Design-oriented non-linear analysis of class-AB power amplifiers
Wei et al. Alpha owned PHEMT model and its verification by load-pull and waveform measurements
Collantes et al. A dynamical load-cycle charge model for RF power FETs