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Maruska et al., 1974 - Google Patents

Mechanism of light production in metal-insulator-semiconductor diodes; GaN: Mg violet light-emitting diodes

Maruska et al., 1974

Document ID
17944071391662991690
Author
Maruska H
Stevenson D
Publication year
Publication venue
Solid-State Electronics

External Links

Snippet

The mechanism of electroluminescence in MIN GaN: Mg violet light-emitting diodes was analyzed by considering observed structural features of the diodes as well as their electrical and optical characteristics. Comparison of the observed I–V characteristic, including …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L21/02612Formation types
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    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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