Kim, 2021 - Google Patents
Tutorial: Fundamentals of Memory Subsystem Design for HPC and AIKim, 2021
- Document ID
- 17634080808618316587
- Author
- Kim K
- Publication year
- Publication venue
- 2021 IEEE International Solid-State Circuits Conference (ISSCC)
External Links
Snippet
This tutorial will help the audience understand memory subsystem design choices for various applications and systems: including technology, hierarchy, architecture, interface and packaging. The talk will begin with an overview of basics of memory subsystems …
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write (R-W) circuits
- G11C11/4093—Input/output (I/O) data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1066—Output synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/105—Aspects related to pads, pins or terminals
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from or digital output to record carriers, e.g. RAID, emulated record carriers, networked record carriers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7585580B2 (en) | Inline buffer for in-memory post-package repair (PPR) | |
US12014078B2 (en) | Apparatus and architecture of non-volatile memory module in parallel configuration | |
US11599458B2 (en) | Stacked memory device and operating method thereof | |
US7606988B2 (en) | Systems and methods for providing a dynamic memory bank page policy | |
JP7730283B2 (en) | Distributing Error Detection and Correction (ECC) Bits to Allocate ECC Bits to Metadata | |
US20100005212A1 (en) | Providing a variable frame format protocol in a cascade interconnected memory system | |
US20100005218A1 (en) | Enhanced cascade interconnected memory system | |
CN113806243B (en) | High-performance non-volatile memory modules | |
EP3852109B1 (en) | Auto-increment write count for nonvolatile memory | |
US12176059B2 (en) | Internal and external data transfer for stacked memory dies | |
US20240288925A1 (en) | Memory expansion card | |
US12300351B2 (en) | Die disablement | |
Kim | Tutorial: Fundamentals of Memory Subsystem Design for HPC and AI | |
US20220365889A1 (en) | Memory with a communications bus for device-to-controller communication, and associated systems, devices, and methods | |
US20230333928A1 (en) | Storage and access of metadata within selective dynamic random access memory (dram) devices | |
US20240028531A1 (en) | Dynamic switch for memory devices | |
US20250225025A1 (en) | Tracking crc (cyclic redundancy check) errors per memory write transaction | |
EP4459468A1 (en) | Storage and access of metadata within selective dynamic random access memory (dram) devices | |
US20230393740A1 (en) | Four way pseudo split die dynamic random access memory (dram) architecture | |
CN119741959A (en) | Alarm signal during operation activates test mode | |
Ang et al. | DRAMs: Technology and IssuesHMC: Micron's New Memory. |