Li et al., 2005 - Google Patents
Comparison of copper disc and copper wafer polishing processes in terms of their kinetic, tribological, and thermal characteristicsLi et al., 2005
- Document ID
- 17601342550342377666
- Author
- Li Z
- Lefevre P
- Koshiyama I
- Ina K
- Boning D
- Philipossian A
- Publication year
- Publication venue
- IEEE transactions on semiconductor manufacturing
External Links
Snippet
Coefficients of friction, removal rate, and pad temperature analysis were used to compare chemical-mechanical polishing processes involving two substrates, copper discs and copper-deposited wafers with different grain sizes and degrees of flatness (ie, concave or …
- 239000010949 copper 0 title abstract description 78
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1213834C (en) | Method of chemical polishing | |
| Liang et al. | Wear phenomena in chemical mechanical polishing | |
| Kenchappa et al. | Soft chemical mechanical polishing pad for oxide CMP applications | |
| Rosales-Yeomans et al. | Effect of pad groove designs on the frictional and removal rate characteristics of ILD CMP | |
| Bahr et al. | Improvements in stribeck curves for copper and tungsten chemical mechanical planarization on soft pads | |
| Jeng et al. | Tribological analysis of CMP with partial asperity contact | |
| Mudhivarthi et al. | Effects of slurry flow rate and pad conditioning temperature on dishing, erosion, and metal loss during copper CMP | |
| Li et al. | Comparison of copper disc and copper wafer polishing processes in terms of their kinetic, tribological, and thermal characteristics | |
| Mu et al. | Effect of pad surface micro-texture on removal rate during tungsten chemical mechanical planarization | |
| Wang et al. | The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection | |
| Mariscal et al. | Tribological, thermal and kinetic characterization of SiO2 and Si3N4 polishing for STI CMP on blanket and patterned wafers | |
| Rosales-Yeomans et al. | Design and evaluation of pad grooves for copper CMP | |
| Lee et al. | Study on the effect of various machining speeds on the wafer polishing process | |
| Yim et al. | Chemical/mechanical balance management through pad microstructure in CMP | |
| Yu et al. | Highest quality and repeatability for single wafer 150mm SiC CMP designed for high volume manufacturing | |
| Frank et al. | Correlating shear force and coefficient of friction to platen motor current in copper, cobalt, and shallow trench isolation chemical mechanical planarization at highly non-steady-state conditions | |
| Tsai et al. | Dressing characteristics of oriented single diamond on CMP polyurethane pad | |
| Jiao et al. | Tribological, thermal, and kinetic characterization of 300-mm copper chemical mechanical planarization process | |
| Liu et al. | Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing | |
| Sampurno et al. | Pattern evolution in shallow trench isolation chemical mechanical planarization via real-time shear and down forces spectral analyses | |
| Kakireddy et al. | Effect of temperature on copper damascene chemical mechanical polishing process | |
| Fu et al. | Surface qualities after chemical–mechanical polishing on thin films | |
| Han et al. | Fractional in situ pad conditioning in chemical mechanical planarization | |
| Chung et al. | Experimental study and modeling of lapping using abrasive grits with mixed sizes | |
| Headley et al. | Correlating Coefficient of Friction and Shear Force to Platen Motor Current in Tungsten and Interlayer Dielectric Chemical Mechanical Planarization at Highly Non-Steady-State Conditions |