Tanaka et al., 1997 - Google Patents
Influence of bias-heating on a titanium bolometer infrared sensorTanaka et al., 1997
- Document ID
- 17474454613150055101
- Author
- Tanaka A
- Matsumoto S
- Tsukamoto N
- Itoh S
- Chiba K
- Endoh T
- Nakazato A
- Okuyama K
- Kumazawa Y
- Hijikawa M
- Gotoh H
- Tanaka T
- Teranishi N
- Publication year
- Publication venue
- Infrared Technology and Applications XXIII
External Links
Snippet
A 128 by 128 pixel bolometer infrared focal plane array using thin film titanium has been developed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer's signals. Since the …
- 239000010936 titanium 0 title abstract description 44
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/10—Radiation pyrometry using electric radiation detectors
- G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
- G01J5/22—Electrical features
- G01J5/24—Use of a specially-adapted circuit, e.g. bridge circuit
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/04—Casings Mountings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/10—Radiation pyrometry using electric radiation detectors
- G01J5/12—Radiation pyrometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J5/14—Electrical features
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/08—Optical features
- G01J5/0803—Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation
- G01J2005/067—Compensating for environment parameters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2710228B2 (en) | Bolometer type infrared detecting element, driving method thereof, and detecting integration circuit | |
Tanaka et al. | Infrared focal plane array incorporating silicon IC process compatible bolometer | |
JP3866069B2 (en) | Infrared solid-state imaging device | |
US7489024B2 (en) | TMOS-infrared uncooled sensor and focal plane array | |
JP3738036B2 (en) | Infrared imager using room temperature temperature capacitance sensor | |
Kanno et al. | Uncooled infrared focal plane array having 128 x 128 thermopile detector elements | |
US20030052271A1 (en) | Micromachined infrared sensitive pixel and infrared imager including same | |
JP3285083B2 (en) | Two-dimensional array type infrared detecting element and manufacturing method thereof | |
Tanaka et al. | Influence of bias-heating on a titanium bolometer infrared sensor | |
JP4257989B2 (en) | Infrared detector and infrared detector array using the same | |
US11125625B2 (en) | Microbolometer readout circuit and calibration method using the same | |
US8039797B2 (en) | Semiconductor for sensing infrared radiation and method thereof | |
JP2002300475A (en) | Infrared sensor and method for driving the same | |
US5502307A (en) | Spun cast IR detector arrays and method of making the same | |
Foote et al. | Progress toward high-performance thermopile imaging arrays | |
US20100176298A1 (en) | Device for detecting electromagnetic radiation | |
Tezcan et al. | Uncooled microbolometer infrared focal plane array in standard CMOS | |
Eminoglu et al. | A low-cost 64/spl times/64 uncooled infrared detector array in standard CMOS | |
US8847160B2 (en) | Semiconductor for sensing infrared radiation and method thereof | |
Tanaka et al. | Low-noise readout circuit for uncooled infrared FPA | |
Eminoğlu et al. | Uncooled Infrared Focal Plane Arrays with Integrated Readout Circuritry Using MEMS and Standard CMOS Technologies | |
Teranishi | Thermoelectric uncooled infrared focal plane arrays | |
JP2005188970A (en) | Thermal infrared solid-state imaging device and infrared camera | |
Tanaka et al. | Infrared linear image sensor using a poly-Si pn junction diode array | |
WO2004075251A2 (en) | Tmos-infrared uncooled sensor and focal plane array |