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Wong et al., 1988 - Google Patents

Proximity gettering with mega‐electron‐volt carbon and oxygen implantations

Wong et al., 1988

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Document ID
17255525111195889361
Author
Wong H
Cheung N
Chu P
Liu J
Mayer J
Publication year
Publication venue
Applied physics letters

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Snippet

We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the …
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