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Abdul-kadir et al., 2020 - Google Patents

Investigation and design of ion-implanted MOSFET based on (18 nm) channel length

Abdul-kadir et al., 2020

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Document ID
17147149803484586589
Author
Abdul-kadir F
khaleel Mohammad K
Hashim Y
Publication year
Publication venue
TELKOMNIKA (Telecommunication Computing Electronics and Control)

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Snippet

The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET's designed structure in this research. The results indicate that …
Continue reading at www.telkomnika.uad.ac.id (PDF) (other versions)

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