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Sun et al., 2015 - Google Patents

Lateral heterojunctions within monolayer h-BN/graphene: a first-principles study

Sun et al., 2015

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Document ID
1678930953738286238
Author
Sun Q
Dai Y
Ma Y
Wei W
Huang B
Publication year
Publication venue
RSC Advances

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Snippet

Very recently, the lateral heterojunctions of hexagonal boron nitride (h-BN)/graphene were experimentally realized for the time. To study the related properties of such heterojunctions with the purpose of searching for new avenues to realize controllable and tunable 2D …
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    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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