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Li et al., 2021 - Google Patents

A vertically stacked Nanosheet gate-all-around FET for biosensing application

Li et al., 2021

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Document ID
16779295263911540360
Author
Li C
Liu F
Han R
Zhuang Y
Publication year
Publication venue
IEEE Access

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Snippet

In this paper, a vertically stacked nanosheet gate-all-around field-effect transistor (GAA- NSFET) as a label-free biosensor has been proposed and investigated. The influences of different biomolecules on the biosensor's electrical properties are analyzed, and the …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/42312—Gate electrodes for field effect devices
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    • H01L51/0508—Field-effect devices, e.g. TFTs
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