[go: up one dir, main page]

Liu et al., 2005 - Google Patents

Recent development in silicon photonics: 2.5 Gb/s silicon optical modulator and silicon Raman laser

Liu et al., 2005

View PDF
Document ID
16196153300941809607
Author
Liu A
Liao L
Rong H
Jones R
Samara-Rubio D
Rubin D
Cohen R
Cohen O
Hak D
Franck T
Keil U
Paniccia M
Publication year
Publication venue
Optoelectronic Integration on Silicon II

External Links

Snippet

Due to the mature silicon fabrication technology and vast existing infrastructures, silicon photonics has a chance to offer low cost solutions to telecommunications and data communications. It could also enable a chip-scale platform for monolithic integration of …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference using semi-conducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves

Similar Documents

Publication Publication Date Title
Jalali et al. Silicon photonics
Fang et al. Hybrid silicon evanescent devices
Fang et al. Recent progress in silicon photonics: a review
Liu et al. Optical amplification and lasing by stimulated Raman scattering in silicon waveguides
Komljenovic et al. Heterogeneous silicon photonic integrated circuits
Yuan et al. Silicon nanocrystals as an enabling material for silicon photonics
Jalali Can silicon change photonics?
Chiu et al. Enhanced performance in traveling-wave electroabsorption modulators based on undercut-etching the active-region
Lai et al. Heterogeneous and hybrid integration for Brillouin microwave photonics
Liu et al. Recent development in silicon photonics: 2.5 Gb/s silicon optical modulator and silicon Raman laser
Mandorlo et al. Controlled multi-wavelength emission in full cmos compatible micro-lasers for on chip interconnections
Rong et al. Characterization of a silicon Raman laser
Al-Saadi et al. High speed silicon electro-optic modulator with pin comb diode
Hwang et al. All-optical switching in InGaAsP–InP photonic crystal resonator coupled with microfiber
Rong et al. Silicon-based laser, amplifier, and wavelength converter for optoelectronic integration
Rong et al. Monolithic integrated ring resonator Raman silicon laser and amplifier
Rong et al. Recent development on silicon-based Raman lasers and amplifiers
Srinivasan et al. Micro-ring resonator based electro-absorption modulators on the hybrid III-V on silicon platform
Dong et al. Enhancement and speed-up of carrier dynamics in a dielectric nanocavity with deep sub-wavelength confinement
Liu et al. Low-power electro-optical switch based on a iii-v microdisk cavity on a silicon-on-insulator circuit
Raghunathan et al. Raman induced wavelength conversion in scaled Silicon waveguides
Jalali et al. Silicon lasers
Tsang Nonlinearities in silicon-on-insulator optical waveguides
Ma Nonlinear integrated photonics on silicon and gallium arsenide substrates
Wathen et al. Efficient continuous-wave four-wave mixing and self-phase modulation in a bandgap-engineered AlGaAs waveguide