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Choi, 2004 - Google Patents

Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application

Choi, 2004

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Document ID
16173828813789562168
Author
Choi R
Publication year

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As the CMOS integrated circuits reduce to the 100-nanometer regime and beyond, the conventional SiO 2 based gate dielectric is facing serious challenges such as high leakage current, impurity diffusion, and dielectric thickness uniformity control across a 300 mm wafer …
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