Barradas et al., 2023 - Google Patents
The effect of IMD drain impedances in RF PA concurrent dual-band operationBarradas et al., 2023
- Document ID
- 15989923435642901454
- Author
- Barradas F
- Nunes L
- Louro J
- Barros D
- Cabral P
- Pedro J
- Publication year
- Publication venue
- IEEE Transactions on Microwave Theory and Techniques
External Links
Snippet
This article develops a theory to explain the effect of controlling the impedance at the intermodulation distortion (IMD) frequencies, related to the first-order passband distortion terms (generated through or), for radio frequency (RF) power amplifiers (PAs) operating in …
- 230000000694 effects 0 title abstract description 13
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3247—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/26—Systems using multi-frequency codes
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Chen et al. | Design and linearization of concurrent dual-band Doherty power amplifier with frequency-dependent power ranges | |
Chen et al. | A broadband Doherty power amplifier based on continuous-mode technology | |
Pang et al. | A post-matching Doherty power amplifier employing low-order impedance inverters for broadband applications | |
Chen et al. | Enhanced analysis and design method of concurrent dual-band power amplifiers with intermodulation impedance tuning | |
Lu et al. | Resistive second-harmonic impedance continuous class-F power amplifier with over one octave bandwidth for cognitive radios | |
US9705540B2 (en) | Control of MISO node | |
Lv et al. | A fully integrated 47.6% fractional bandwidth GaN MMIC distributed efficient power amplifier with modified input matching and power splitting network | |
Chu et al. | Broadband sequential load modulated balanced amplifier with extended design space using second harmonic manipulation | |
Duffy et al. | Efficient multisignal 2–4-GHz power amplifier with power tracking | |
Li et al. | Two-port network theory-based design method for broadband class J Doherty amplifiers | |
Chen et al. | Simplified emulation of active load modulation for a millimeter-wave GaN MMIC Doherty power amplifier design | |
Alsulami et al. | A novel 3-way dual-band Doherty power amplifier for enhanced concurrent operation | |
Chen et al. | Systematic crest factor reduction and efficiency enhancement of dual-band power amplifier based transmitters | |
You et al. | Design of broadband high-efficiency power amplifier through interpolations on continuous operation-modes | |
Bensmida et al. | Extending the characterization bandwidth of dynamic nonlinear transmitters with application to digital predistortion | |
Barradas et al. | The effect of IMD drain impedances in RF PA concurrent dual-band operation | |
Gong et al. | Signal-flow-based analysis and design of pseudo-Doherty load-modulated balanced amplifier toward unlimited RF bandwidth | |
Chen et al. | The nested-mode power amplifiers for highly efficient multi-octave applications | |
Rusanen et al. | Ka-band orthogonal load-modulated balanced amplifier in 22 nm CMOS FDSOI | |
Fisher et al. | An optimized segmented quasi-memoryless nonlinear behavioral modeling approach for RF power amplifiers | |
Kuwata et al. | Effects of load impedances at third order intermodulation tones | |
Sajedin et al. | Multi-resonant class-F power amplifier design for 5G cellular networks | |
Duffy et al. | Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation | |
Hoversten | Efficient and linear microwave transmitters for high peak-to-average ratio signals | |
Bachi | Design and implementation of high efficiency power amplifiers for 5G Applications |