[go: up one dir, main page]

Wagner et al., 1994 - Google Patents

Raman monitoring of semiconductor growth

Wagner et al., 1994

View PDF
Document ID
15565420318902649166
Author
Wagner V
Drews D
Esser N
Zahn D
Geurts J
Richter W
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

In this paper it is demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. For this purpose an ultra‐high‐vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical …
Continue reading at pubs.aip.org (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84—Systems specially adapted for particular applications

Similar Documents

Publication Publication Date Title
Wagner et al. Raman monitoring of semiconductor growth
Wagner et al. Resonance effects in Raman scattering from polycrystalline diamond films
US8734536B2 (en) Temperature-adjusted spectrometer
Toyoshima et al. Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy
US5260772A (en) Method and apparatus for determining a material's characteristics by photoreflectance
US5255070A (en) Method for determining interface properties of semiconductor materials by photoreflectance
Hayward et al. Direct imaging and confocal mapping of diamond films using luminescence and Raman scattering
Drews et al. Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy
Ferrini et al. Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV
Aiga et al. Origins of emergent high-T c ferroelectric ordering in heteroepitaxial ice films: Sum-frequency generation vibrational spectroscopy of H 2 O and D 2 O ice films on Pt (111)
Zahn et al. Phase transition from the cubic to the hexagonal modification in thin CdS films on InP (110)
Remillard et al. Optical studies of PdO thin films
Senthil et al. Raman scattering and XRD analysis in argon ion implanted CdS thin films prepared by vacuum evaporation
Exarhos Raman determination of molecular structure and physical properties of dielectric coatings
Kida et al. Measurement of deep states in undoped amorphous silicon by current transient spectroscopy
Katayama et al. Real-time monitoring of molecular-beam epitaxy processes with coaxial impact-collision ion scattering spectroscopy (CAICISS)
Roth et al. In situ substrate temperature measurement during MBE by band-edge reflection spectroscopy
Nakashima et al. Characterization of ion implanted and laser annealed polycrystalline Si by a Raman microprobe
Perkowitz et al. Optical characterization in microelectronics manufacturing
Maslar et al. Raman spectroscopy of n-type and p-type GaSb with multiple excitation wavelengths
Wagner et al. On‐Line Raman Analysis of Molecular Beam Epitaxial Growth
Mermoux et al. In situ analysis of the Raman diamond line. Measurements in the visible and UV spectral range
Levy et al. Characterization of CdTe substrates and mocvd Cd1− xZnxTe epilayers
Rowell et al. Photoluminescence of MBE Grown Si1− xGex Films
Rath et al. Evidence of a tetragonal structure of germanium nanocrystals prepared by the cluster-beam deposition technique