[go: up one dir, main page]

Moyne et al., 2018 - Google Patents

15 Multizone Uniformity Control of Utilizing Postmeasurement Strategy

Moyne et al., 2018

View PDF
Document ID
14992364192698031004
Author
Moyne J
El Chemali C
Khan K
Nadeau R
Smith P
Colt J
Chapple-Sokol J
Parikh T
Publication year
Publication venue
Run-to-Run Control in Semiconductor Manufacturing

External Links

Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers

Similar Documents

Publication Publication Date Title
US6540591B1 (en) Method and apparatus for post-polish thickness and uniformity control
KR100572039B1 (en) Systems and methods for controlling the manufacture of individual components in semiconductor manufacturing using model predictive control
US6751518B1 (en) Dynamic process state adjustment of a processing tool to reduce non-uniformity
US6197604B1 (en) Method for providing cooperative run-to-run control for multi-product and multi-process semiconductor fabrication
US6625513B1 (en) Run-to-run control over semiconductor processing tool based upon mirror image target
US6746308B1 (en) Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same
US6773931B2 (en) Dynamic targeting for a process control system
Smith et al. A self-tuning EWMA controller utilizing artificial neural network function approximation techniques
US7906032B2 (en) Method for conditioning a process chamber
CN102737945B (en) Plasma processing apparatus, and plasma processing method
US7722436B2 (en) Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
US20230083737A1 (en) System, method, and user interface for edge ring wear compensation
US20030220708A1 (en) Integrated equipment set for forming shallow trench isolation regions
US6485990B1 (en) Feed-forward control of an etch processing tool
US6665623B1 (en) Method and apparatus for optimizing downstream uniformity
US9633841B2 (en) Methods for depositing amorphous silicon
El Chemali et al. Multizone uniformity control of a chemical mechanical polishing process utilizing a pre-and postmeasurement strategy
US7254453B2 (en) Secondary process controller for supplementing a primary process controller
US6698009B1 (en) Method and apparatus for modeling of batch dynamics based upon integrated metrology
Patel et al. Device dependent control of chemical-mechanical polishing of dielectric films
Moyne et al. Multizone Uniformity Control of a CMP Process Utilizing a Pre-and Postmeasurement Strategy
Moyne et al. 15 Multizone Uniformity Control of Utilizing Postmeasurement Strategy
US6675058B1 (en) Method and apparatus for controlling the flow of wafers through a process flow
Khan et al. Yield improvement at the contact process through run-to-run control
US7333875B2 (en) Method of predicting CMP removal rate for CMP process in a CMP process tool in order to determine a required polishing time