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Tomonari et al., 2003 - Google Patents

Miniaturization of a thermally driven Ni| Si bimorph

Tomonari et al., 2003

Document ID
14698568374471191715
Author
Tomonari S
Yoshida H
Kamakura M
Yoshida K
Kawahito K
Saitoh M
Kawada H
Juodkazis S
Misawa H
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

We report on the development of a thermally isolated bimorph structure based on a Ni| Si pair. A 1-mm-long beam of the bimorph was thermally isolated by a polyimide comb from the rest of the Si structure. The Si and Ni layers of the bimorph were 20 µm thick. This geometry …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08—Piezo-electric or electrostrictive devices
    • H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
    • H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H01L41/0933—Beam type
    • H01L41/094—Cantilevers, i.e. having one fixed end

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