[go: up one dir, main page]

Bao et al., 2008 - Google Patents

Automated AFM as an Industrial Process Metrology Tool for Nanoelectronic Manufacturing

Bao et al., 2008

Document ID
14337132537875917342
Author
Bao T
Fong D
Hand S
Publication year
Publication venue
Applied Scanning Probe Methods X: Biomimetics and Industrial Applications

External Links

Snippet

Scanning probe microscope (SPM) techniques, invented 20 years ago, act as eyes for nanotechnology and nanoscience research and development, for imaging and characterizing surface topography and properties at atomic resolution. Particularly for the …
Continue reading at link.springer.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process

Similar Documents

Publication Publication Date Title
Bunday et al. 7/5nm logic manufacturing capabilities and requirements of metrology
Ma et al. Metrology and Diagnostic Techniques for Nanoelectronics
TWI250601B (en) Method and apparatus employing integrated metrology for improved dielectric etch efficiency
US7829852B2 (en) Device having etched feature with shrinkage carryover
Breton et al. Review of nanosheet metrology opportunities for technology readiness
Bunday HVM metrology challenges towards the 5nm node
Bunday et al. Metrology capabilities and needs for 7nm and 5nm logic nodes
Vaid et al. A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM
Liu et al. Towards electrical testable SOI devices using Directed Self-Assembly for fin formation
Arceo et al. Patterned defect and CD metrology by TSOM beyond the 22-nm node
Vaid et al. Hybrid metrology solution for 1X-node technology
Lorusso et al. Enabling CD SEM metrology for 5nm technology node and beyond
Bao et al. Automated AFM as an Industrial Process Metrology Tool for Nanoelectronic Manufacturing
Gin et al. Inline metrology of high aspect ratio hole tilt using small-angle x-ray scattering
Foucher et al. Study of 3D metrology techniques as an alternative to cross-sectional analysis at the R&D level
Moussa et al. Atomic force microscopy: from research lab to high-volume manufacturing
US20080055597A1 (en) Method for characterizing line width roughness (lwr) of printed features
Vaid et al. Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope
Orji et al. 3D-AFM measurements for semiconductor structures and devices
Kim et al. In-line critical dimension and sidewall roughness metrology study for compound nanostructure process control by in-line 3D atomic force microscope
Bunday et al. Metrology
Rawlings et al. High throughput lithography using thermal scanning probes
Kwon et al. Critical in-line OCD metrology for CFET manufacturing
Caldwell et al. Improved dimension and shape metrology with versatile atomic force microscopy
Breton et al. AFM characterization for Gate-All-Around (GAA) devices