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Rumyantsev et al., 2001 - Google Patents

Thin n-GaN films with low level of 1/f noise

Rumyantsev et al., 2001

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Document ID
13887102841259232412
Author
Rumyantsev S
Pala N
Shur M
Gaska R
Levinshtein M
Asif Khan M
Simin G
Hu X
Yang J
Publication year
Publication venue
Electronics Letters

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Snippet

The authors report on the results of measurements of low frequency noise in thin (60 nm) Si- doped n-type gallium nitride (GaN) films grown on sapphire. At room temperature, the noise spectra have the form of 1/f noise with a Hooge parameter α~ 2× 10-3. This value of α is …
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