Etherton et al., 2004 - Google Patents
Study of CDM specific effects for a smart power input protection structureEtherton et al., 2004
- Document ID
- 13734425193510314312
- Author
- Etherton M
- Qu N
- Willemen J
- Wilkening W
- Mettler S
- Dissegna M
- Stella R
- Zullino L
- Andreini A
- Gieser H
- Wolf H
- Fichtner W
- Publication year
- Publication venue
- 2004 Electrical Overstress/Electrostatic Discharge Symposium
External Links
Snippet
ESD failure mechanisms, specific for charged device model (CDM) stress, are discussed for an input protection structure in a smart power technology showing unexpected dependency of CDM robustness on design variations. This paper demonstrates that factors like package …
- 230000000694 effects 0 title description 9
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. varying supply voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/02—Testing of electric apparatus, lines or components, for short-circuits, discontinuities, leakage of current, or incorrect line connection
- G01R31/04—Testing connections, e.g. of plugs, of non-disconnectable joints
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/02—Testing of electric apparatus, lines or components, for short-circuits, discontinuities, leakage of current, or incorrect line connection
- G01R31/024—Arrangements for indicating continuity or short-circuits in electric apparatus or lines, leakage or ground faults
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
- G01R27/205—Measuring contact resistance of connections, e.g. of earth connections
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Amerasekera et al. | ESD in silicon integrated circuits | |
| Kelly et al. | A comparison of electrostatic discharge models and failure signatures for CMOS integrated circuit devices | |
| Verhaege et al. | Analysis of HBM ESD testers and specifications using a fourth‐order lumped element model | |
| Esmark et al. | Using CC-TLP to get a CDM robustness value | |
| Beebe | Simulation of complete CMOS I/O circuit response to CDM stress | |
| Patnaik et al. | On-chip sensors to measure level of transient events | |
| Scholz et al. | System-level ESD protection design using on-wafer characterization and transient simulations | |
| Jack et al. | Low impedance contact CDM | |
| Etherton et al. | Study of CDM specific effects for a smart power input protection structure | |
| Zeitlhoefler et al. | Energy of CDM Failure for ICs on Package-, Wafer-and Board-Level | |
| Stadler et al. | Test circuits for fast and reliable assessment of CDM robustness of I/O stages | |
| Wolf et al. | Capacitive coupled TLP (CC-TLP) and the correlation with the CDM | |
| Russ et al. | ESD protection elements during HBM stress tests—further numerical and experimental results | |
| Jack et al. | Comparison of FICDM and wafer-level CDM test methods | |
| Wolf et al. | Investigating the CDM susceptibility of IC’s at package and wafer level by capacitive coupled TLP | |
| Weber et al. | Correlation limits between capacitively coupled transmission line pulsing (CC-TLP) and CDM for a large chip-on-flex assembly | |
| Wolf et al. | Transient analysis of ESD protection elements by time domain transmission using repetitive pulses | |
| Verhaege et al. | Recommendations to further improvements of HBM ESD component level test specifications | |
| Sun et al. | Correlation between pulse IV and human body model (HBM) tests for drain electrostatic discharge (ESD) robustness evaluation of GaN power HEMTs | |
| Di Biccari et al. | Impact of Alternative CDM Methods on HV ESD Protections Behavior | |
| Troussier et al. | Study of inter-power domain failures during a CDM event | |
| Ashton | Transmission line pulse measurements: a tool for developing ESD robust integrated circuits | |
| Jack et al. | Voltage monitor circuit for ESD diagnosis | |
| Gieser et al. | Survey on very fast TLP and ultra fast repetitive pulsing for characterization in the CDM-domain | |
| Hajjar et al. | CDM event simulation in SPICE: A holistic approach |