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Vonsovici et al., 2002 - Google Patents

Room temperature photocurrent spectroscopy of SiGe/Si pin photodiodes grown by selective epitaxy

Vonsovici et al., 2002

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Document ID
12975937790156546883
Author
Vonsovici A
Vescan L
Apetz R
Koster A
Schmidt K
Publication year
Publication venue
IEEE Transactions on Electron Devices

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Snippet

We present the photocurrent spectroscopy of Si/sub 1-x/Ge/sub x//Si double heterostructure pin diodes selectively grown by low pressure chemical vapor deposition. The growth onto patterned wafers permits to obtain dislocation-free, fully strained Si/sub 1-x/Ge/sub x/layers …
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