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Li et al., 2006 - Google Patents

Growth of III-nitride photonic structures on large area silicon substrates

Li et al., 2006

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Document ID
12852987030042089188
Author
Li J
Lin J
Jiang H
Publication year
Publication venue
Applied physics letters

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We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (⁠ 6 in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III …
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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