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Liu et al., 1997 - Google Patents

Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

Liu et al., 1997

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Document ID
12461782878622330388
Author
Liu C
Sturm J
Publication year
Publication venue
Journal of applied physics

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The growth properties of β-SiC on (100) Si grown by rapid thermal chemical vapor deposition, using a single precursor (methylsilane) without an initial surface carbonization step, were investigated. An optimun growth temperature at 800° C was found to grow single …
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