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Lin et al., 2014 - Google Patents

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

Lin et al., 2014

Document ID
12018138113191028183
Author
Lin Y
Lin J
Publication year
Publication venue
Applied surface science

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Snippet

The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of− 120 to 30° C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and …
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